Abstract: A method of forming a semiconductor device comprising forming a patterned resist over a stack comprising at least one material and removing a portion of the stack exposed through the patterned resist to form a stack opening. A portion of the patterned resist is laterally removed to form a trimmed resist and an additional portion of the stack exposed through the trimmed resist is removed to form steps in sidewalls of the stack. A dielectric material is formed between the sidewalls of the stack to substantially completely fill the stack opening, and the dielectric material is planarized. Additional methods are disclosed, as well as semiconductor devices.

Abstract: A system, apparatus, and method for multiple wavelength Raman interrogation laser generation and Raman spectra acquisition. An intracavity laser tuning subsystem is integrated into the laser cavity. The tuning subsystem allows switching between at least two laser output frequencies in a manner effective for good identification and separation of Raman spectra from non-Raman spectra, including auto-fluorescence from the sample and background. The tuning subsystem can be implemented in different ways in the cavity. It does not require material alteration of the line-narrowing components. Also, processing of acquired raw signal from the multiple wavelength interrogation can further assist effective Raman spectra identification and separation.

Abstract: An apparatus, system, and method of focus compensation for a vehicle-mounted, downward looking optical detection system. A first stage compensator addresses high frequency events needing rapid, small displacement compensation. A second stage compensator addresses lower frequency but sometimes larger displacement compensation.

Abstract: A method for utilizing polarization as a scheme for fluorescence removal from UV Raman spectra collected in a standoff detection scheme has been invented. In this scheme, a linearly polarized ultraviolet (UV) laser interacts with a material on a surface or in a container. The material generates Raman scattering with polarization contributions relative to that of the laser. The material possibly fluoresces as well, but the fluorescence is generally unpolarized. By subtracting a scaled version of the perpendicular component from the parallel component of the returned signal both relative to the laser source polarization—it is possible to generate a spectrum that is fluorescence free and contains the strongest features of the Raman scattered light.