Patents by Inventor Adam Jandl

Adam Jandl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220262640
    Abstract: Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.
    Type: Application
    Filed: May 5, 2022
    Publication date: August 18, 2022
    Inventors: Adam Jandl, Sema Ermez, Lawrence Schloss, Sanjay Gopinath, Michal Danek, Siew Neo, Joshua Collins, Hanna Bamnolker
  • Patent number: 11355345
    Abstract: Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.
    Type: Grant
    Filed: December 21, 2019
    Date of Patent: June 7, 2022
    Assignee: Lam Research Corporation
    Inventors: Adam Jandl, Sema Ermez, Lawrence Schloss, Sanjay Gopinath, Michal Danek, Siew Neo, Joshua Collins, Hanna Bamnolker
  • Publication number: 20200144066
    Abstract: Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.
    Type: Application
    Filed: December 21, 2019
    Publication date: May 7, 2020
    Inventors: Adam Jandl, Sema Ermez, Lawrence Schloss, Sanjay Gopinath, Michal Danek, Siew Neo, Joshua Collins, Hanna Bamnolker
  • Patent number: 10573522
    Abstract: Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: February 25, 2020
    Assignee: Lam Research Corporation
    Inventors: Adam Jandl, Sema Ermez, Lawrence Schloss, Sanjay Gopinath, Michal Danek, Siew Neo, Joshua Collins, Hanna Bamnolker
  • Publication number: 20180053660
    Abstract: Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.
    Type: Application
    Filed: August 9, 2017
    Publication date: February 22, 2018
    Inventors: Adam Jandl, Sema Ermez, Lawrence Schloss, Sanjay Gopinath, Michal Danek, Siew Neo, Joshua Collins, Hanna Bamnolker