Patents by Inventor Adam M. Lorenz
Adam M. Lorenz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10770613Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.Type: GrantFiled: September 4, 2019Date of Patent: September 8, 2020Assignee: 1366 TECHNOLOGIES INC.Inventors: Ralf Jonczyk, Brian D. Kernan, G.D. Stephen Hudelson, Adam M. Lorenz, Emanuel M. Sachs
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Publication number: 20190393375Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.Type: ApplicationFiled: September 4, 2019Publication date: December 26, 2019Inventors: RALF JONCZYK, BRIAN D. KERNAN, G.D. STEPHEN HUDELSON, ADAM M. LORENZ, EMANUEL M. SACHS
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Patent number: 10439095Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant cannot enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.Type: GrantFiled: October 14, 2015Date of Patent: October 8, 2019Assignee: 1366 TECHNOLOGIES, INC.Inventors: Ralf Jonczyk, Brian D. Kernan, G. D. Stephen Hudelson, Adam M. Lorenz, Emanuel M. Sachs
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Publication number: 20180019365Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.Type: ApplicationFiled: October 14, 2015Publication date: January 18, 2018Applicant: 1366 TECHNOLOGIES, INC.Inventors: RALF JONCZYK, KERNAN D BRIAN, G.D. STEPHEN HUDELSON, RICHARD L. WALLACE, ADAM M LORENZ
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Patent number: 9643342Abstract: A pressure differential can be applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential can allow release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted through the thickness of the forming wafer. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet can allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.Type: GrantFiled: April 11, 2014Date of Patent: May 9, 2017Assignee: 1366 Technologies, Inc.Inventors: Emanuel M. Sachs, Richard L. Wallace, Eerik T. Hantsoo, Adam M. Lorenz, G. D. Stephen Hudelson, Ralf Jonczyk
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Publication number: 20140220171Abstract: A pressure differential can be applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential can allow release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted through the thickness of the forming wafer. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet can allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.Type: ApplicationFiled: April 11, 2014Publication date: August 7, 2014Applicant: 1366 TECHNOLOGIES, INC.Inventors: Emanuel M. Sachs, Richard L. Wallace, Eerik T. Hantsoo, Adam M. Lorenz, G.D. Stephen Hudelson, Ralf Jonczyk
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Patent number: 8696810Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.Type: GrantFiled: October 18, 2012Date of Patent: April 15, 2014Assignee: 1366 Technologies, Inc.Inventors: Eerik T. Hantsoo, G. D. Stephen Hudelson, Ralf Jonczyk, Adam M. Lorenz, Emanuel M. Sachs, Richard L. Wallace
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Patent number: 8293009Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.Type: GrantFiled: November 17, 2011Date of Patent: October 23, 2012Assignee: 1366 Technologies Inc.Inventors: Emanuel M. Sachs, Richard L. Wallace, Eerik T. Hantsoo, Adam M. Lorenz, G. D. Stephen Hudelson, Ralf Jonczyk
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Publication number: 20120067273Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.Type: ApplicationFiled: November 17, 2011Publication date: March 22, 2012Applicant: 1366 TECHNOLOGIES INC.Inventors: Emanuel M. Sachs, Richard L. Wallace, Eerik T. Hantsoo, Adam M. Lorenz, G. D. Stephen Hudelson, Ralf Jonczyk
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Publication number: 20110247549Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.Type: ApplicationFiled: March 9, 2010Publication date: October 13, 2011Applicant: 1366 TECHNOLOGIES INC.Inventors: Emanuel M. Sachs, Richard L. Wallace, Eerik T. Hantsoo, Adam M. Lorenz, G. D. Stephen Hudelson, Ralf Jonczyk
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Patent number: 7250134Abstract: A steel powder metal skeleton is infiltrated with an infiltrant composition similar to the skeleton, with an additional agent that depresses the melting point of the infiltrant relative to the skeleton. Infiltration is driven primarily by capillary pressure. The powder and infiltrant compositions differ primarily only in a higher concentration of a melting point depressant agent “MPD” in the infiltrant. Carbon (C) and silicon (Si) and several other elements can be elements in an MPD, either alone or in combination. Certain steel target compositions are such that a complementary infiltrant, and skeleton can be chosen such that a skeleton will remain solid at an infiltration temperature at which the infiltrant can be melted and fully infiltrated, and further where there is a persistent two phase field, with a liquid phase that is large enough (greater than 7% vol, and typically between 20 and 40 vol %) so that flow can be maintained without choke off from diffusional solidification.Type: GrantFiled: November 26, 2003Date of Patent: July 31, 2007Assignee: Massachusetts Institute of TechnologyInventors: Brian D. Kernan, Emanuel M. Sachs, Samuel M. Allen, Adam M. Lorenz
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Patent number: 7060222Abstract: An infiltrant is used to fill a metal powder skeleton. The infiltrant is similar in composition to the base powder, but contains a melting point depressant. The infiltrant will quickly fill the powder skeleton, then as the melting point depressant diffuses into the base powder, the liquid will undergo solidification and the material will eventually homogenize. This process allows more accurate control of dimensions in large parts with uniform or homogeneous microstructure or bulk properties.Type: GrantFiled: May 21, 2001Date of Patent: June 13, 2006Assignee: Massachusetts Institute of TechnologyInventors: Emanuel M. Sachs, Adam M. Lorenz, Samuel Allen
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Publication number: 20040211538Abstract: In infiltrating a porous metal skeleton an infiltrant composition is used similar to that of the powder skeleton, but with the addition of a melting point depressant. The infiltrant quickly fills the skeleton. As the melting point depressant diffuses into the base powder, the liquid may undergo diffusional solidification and the material eventually homogenizes. Maintaining the infiltrant at a liquidus composition for the infiltration temperature typically ensures that the bulk composition or properties will remain uniform throughout the part, particularly in the direction of infiltration. Success of such an infiltration is enhanced by effective means of maintaining the molten infiltrant at a liquidus composition. It is also beneficial, in some cases, for the time scale of the infiltration to be much faster than the time scale of the diffusion of the melting point depressant and the subsequent solidification and homogenization.Type: ApplicationFiled: April 6, 2004Publication date: October 28, 2004Applicant: Massachusetts Institute of TechnologyInventors: Adam M. Lorenz, Emanuel M. Sachs, Samuel M. Allen
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Patent number: 6719948Abstract: In infiltrating a porous metal skeleton an infiltrant composition is used similar to that of the powder skeleton, but with the addition of a melting point depressant. The infiltrant quickly fills the skeleton. As the melting point depressant diffuses into the base powder, the liquid may undergo diffusional solidification and the material eventually homogenizes. Maintaining the infiltrant at a liquidus composition for the infiltration temperature typically ensures that the bulk composition or properties will remain uniform throughout the part, particularly in the direction of infiltration. Success of such an infiltration is enhanced by effective means of maintaining the molten infiltrant at a liquidus composition. It is also beneficial, in some cases, for the time scale of the infiltration to be much faster than the time scale of the diffusion of the melting point depressant and the subsequent solidification and homogenization.Type: GrantFiled: May 21, 2001Date of Patent: April 13, 2004Assignee: Massachusetts Institute of TechnologyInventors: Adam M. Lorenz, Emanuel M. Sachs, Samuel M. Allen
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Publication number: 20040009086Abstract: An infiltrant is used to fill a metal powder skeleton. The infiltrant is similar in composition to the base powder, but contains a melting point depressant. The infiltrant will quickly fill the powder skeleton, then as the melting point depressant diffuses into the base powder, the liquid will undergo solidification and the material will eventually homogenize. This process allows more accurate control of dimensions in large parts with uniform or homogeneous microstructure or bulk properties.Type: ApplicationFiled: May 19, 2003Publication date: January 15, 2004Inventors: Emanuel M Sachs, Adam M Lorenz, Sameul Allen
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Publication number: 20030156963Abstract: In infiltrating a porous metal skeleton an infiltrant composition is used similar to that of the powder skeleton, but with the addition of a melting point depressant. The infiltrant quickly fills the skeleton. As the melting point depressant diffuses into the base powder, the liquid, may undergo diffusional solidification and the material eventually homogenizes. Maintaining the infiltrant at a liquidus composition for the infiltration temperature typically ensures that the bulk composition or properties will remain uniform throughout the part, particularly in the direction of infiltration. Success of such an infiltration is enhanced by effective means of maintaining the molten infiltrant at a liquidus composition. It is also beneficial, in some cases, for the time scale of the infiltration to be much faster than the time scale of the diffusion of the melting point depressant and the subsequent solidification and homogenization.Type: ApplicationFiled: May 21, 2001Publication date: August 21, 2003Applicant: Massachusetts Institute of TechnologyInventors: Adam M. Lorenz, Emanuel M. Sachs, Samuel M. Allen