Patents by Inventor Adam R. Pawloski

Adam R. Pawloski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120010307
    Abstract: The invention provides a composition and process for producing expandable beads from a compostable or biobased thermoplastic polymer. A key aspect of this invention is the ability to incorporate sufficient amounts of hydrocarbon blowing agent into the matrix of the compostable or biobased polymer. The following process may be used. First, the raw materials of compostable or biobased polymers, hydrophobic additive, and other additives are mixed by melt processing techniques. Next, a hydrocarbon blowing agent is added to the admixture, either by addition into the melt or by impregnation into the solid, to produce an expandable bead. Small, lightweight, foamed beads are produced by heating the expandable bead. Then, the expanded beads are subsequently used in conventional operations for molding into foamed articles.
    Type: Application
    Filed: July 7, 2011
    Publication date: January 12, 2012
    Applicant: Lifoam Industries
    Inventors: Adam R. Pawloski, Jeffrey J. Cernohous, Kent Kaske
  • Patent number: 7855048
    Abstract: A method of fabricating a semiconductor device using lithography. The method can include providing a wafer assembly having a layer to be processed disposed under a photo resist layer and illuminating the wafer assembly with an exposure dose transmitted through a birefringent material disposed between a final optical element of an imaging subsystem used to transmit the exposure dose and the photo resist layer. Also disclosed is a wafer assembly from which at least one semiconductor device can be fabricated. The wafer assembly can include a layer to be processed, a photo resist layer disposed over the layer to be processed and a contrast enhancing, birefringent top anti-reflecting coating (TARC).
    Type: Grant
    Filed: May 4, 2004
    Date of Patent: December 21, 2010
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Cyrus E. Tabery, Bruno M. LaFontaine, Adam R. Pawloski, Jongwook Kye
  • Patent number: 7741012
    Abstract: A process for fabricating a semiconductor device, including applying an immersion lithography medium to a surface of a semiconductor wafer; exposing a material on the surface of the semiconductor wafer to electromagnetic radiation having a selected wavelength; and applying supercritical carbon dioxide to the semiconductor wafer to remove the immersion lithography medium from the surface of the semiconductor wafer. In one embodiment, the process includes recovery of the immersion lithography medium.
    Type: Grant
    Filed: March 1, 2004
    Date of Patent: June 22, 2010
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Adam R. Pawloski, Amr Y. Abdo, Gilles R. Amblard, Bruno M. LaFontaine, Ivan Lalovic, Harry J. Levinson, Jeffrey A. Schefske, Cyrus E. Tabery, Frank Tsai
  • Patent number: 7563560
    Abstract: A polyelectrolyte solution for tuning a surface energy and a method for using the polyelectrolyte solution to manufacture an integrated circuit. A substrate is provided and a photosensitive material having a surface energy is formed over the substrate. The substrate may be polysilicon, silicon dioxide, silicon nitride, metal, and the like. The photosensitive material is treated with a polyelectrolyte solution to change the surface energy of the photosensitive material. Treatment techniques for applying the polyelectrolyte solution may include spraying, bathing, rinsing, soaking, or washing. The polyelectrolyte adsorbs to the photosensitive material forming a polyelectrolyte polymer layer on the photosensitive material. The photosensitive material may be a photoresist or a photoresist having a topcoat formed thereon. The photosensitive material is exposed using lithography techniques and processed to form a patterned layer of photosensitive material for use in manufacturing the integrated circuit.
    Type: Grant
    Filed: February 1, 2005
    Date of Patent: July 21, 2009
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Adam R. Pawloski, Harry J. Levinson
  • Patent number: 7504198
    Abstract: Methods are provided for enhancing resolution of a chemically amplified photoresist. A film comprising a photoacid generator and a polymer comprising functional groups bonded to protecting moieties is deposited on a substrate. The film is exposed to patterned radiation. The patterned radiation results in protonation of a portion of the functional groups and the formation of a latent image within the film. The bonds between the protonated functional groups and the protecting moieties are selectively excited with non-thermal energy having a wavelength spectrum that resonantly cleaves the bonds.
    Type: Grant
    Filed: May 24, 2006
    Date of Patent: March 17, 2009
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Bruno LaFontaine, Adam R. Pawloski, Thomas Wallow
  • Patent number: 7315033
    Abstract: Disclosed are a method of reducing biological contamination in an immersion lithography system and an immersion lithography system configured to reduce biological contamination. A reflecting element and/or an irradiating element is used to direct radiation to kill biological contaminates present with respect to at least one of i) a volume adjacent a final element of the projection system or ii) an immersion medium supply device disposed adjacent the final element.
    Type: Grant
    Filed: May 4, 2005
    Date of Patent: January 1, 2008
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Adam R. Pawloski, Harry J. Levinson, Jongwook Kye
  • Publication number: 20070275321
    Abstract: Methods are provided for enhancing resolution of a chemically amplified photoresist. A film comprising a photoacid generator and a polymer comprising functional groups bonded to protecting moieties is deposited on a substrate. The film is exposed to patterned radiation. The patterned radiation results in protonation of a portion of the functional groups and the formation of a latent image within the film. The bonds between the protonated functional groups and the protecting moieties are selectively excited with non-thermal energy having a wavelength spectrum that resonantly cleaves the bonds.
    Type: Application
    Filed: May 24, 2006
    Publication date: November 29, 2007
    Inventors: Bruno LaFontaine, Adam R. Pawloski, Thomas Wallow
  • Patent number: 7060401
    Abstract: A reflective reticle includes reflective regions of different phases, with one of the reflective regions being, for example, 180 degrees out of phase with another region. The reflective reticle also includes absorptive regions, which may be placed between reflective regions of opposite phases. The reticle may include a reflector, made up of multiple reflective layers, atop a substrate of absorptive material. The reflector may have some of the reflective areas removed in the phase-shift regions, and substantially all of the reflective layers removed in the absorptive regions. The reticle may allow for greater resolution extreme ultraviolet (EUV) lithography.
    Type: Grant
    Filed: October 1, 2003
    Date of Patent: June 13, 2006
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Bruno M. LaFontaine, Adam R. Pawloski, Yunfei Deng
  • Patent number: 7014966
    Abstract: A method of operating an immersion lithography system, including steps of immersing at least a portion of a wafer to be exposed in an immersion medium, wherein the immersion medium comprises at least one bubble; directing an ultrasonic wave through at least a portion of the immersion medium to disrupt and/or dissipate the at least one bubble; and exposing the wafer with an exposure pattern by passing electromagnetic radiation through the immersion medium subsequent to the directing. Also disclosed is a monitoring and control system for an immersion lithography system.
    Type: Grant
    Filed: September 2, 2003
    Date of Patent: March 21, 2006
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Adam R. Pawloski, Amr Y. Abdo, Gilles R. Amblard, Bruno M. LaFontaine, Ivan Lalovic, Harry J. Levinson, Jeffrey A. Schefske, Cyrus E. Tabery, Frank Tsai
  • Patent number: 6984475
    Abstract: An extreme ultraviolet (EUV) lithography mask blank. The mask blank can include a substrate having a reflector film disposed over an upper surface of the substrate. The mask blank is provided with structural features to facilitate indirect grounding of the reflector film.
    Type: Grant
    Filed: November 3, 2003
    Date of Patent: January 10, 2006
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Harry J. Levinson, Bruno M. LaFontaine, Ivan Lalovic, Adam R. Pawloski