Patents by Inventor Adelbert Owyoung

Adelbert Owyoung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated injection-locked semiconductor diode laser
    Patent number: 4995047
    Abstract: A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.
    Type: Grant
    Filed: August 30, 1989
    Date of Patent: February 19, 1991
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: G. Ronald Hadley, John P. Hohimer, Adelbert Owyoung
  • Semiconductor laser devices having lateral refractive index tailoring
    Patent number: 4965806
    Abstract: A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.
    Type: Grant
    Filed: June 15, 1989
    Date of Patent: October 23, 1990
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Carol I. H. Ashby, G. Ronald Hadley, John P. Hohimer, Adelbert Owyoung
  • Polarization feedback laser stabilization
    Patent number: 4791633
    Abstract: A system for locking two Nd:YAG laser oscillators includes an optical path for feeding the output of one laser into the other with different polarizations. Elliptical polarization is incorporated into the optical path so that the change in polarization that occurs when the frequencies coincide may be detected to provide a feedback signal to control one laser relative to the other.
    Type: Grant
    Filed: September 28, 1987
    Date of Patent: December 13, 1988
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Peter Esherick, Adelbert Owyoung
  • Single-element optical injection locking of diode-laser arrays
    Patent number: 4751705
    Abstract: By optically injecting a single end-element of a semiconductor laser array, both the spatial and spectral emission characteristics of the entire laser array is controlled. With the output of the array locked, the far-field emission angle of the array is continuously scanned over several degrees by varying the injection frequency.
    Type: Grant
    Filed: October 7, 1986
    Date of Patent: June 14, 1988
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: G. Ronald Hadley, John P. Hohimer, Adelbert Owyoung