Patents by Inventor Adi Birman

Adi Birman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single poly CMOS logic memory cell for RFID application and its programming and erasing method
    Patent number: 7700994
    Abstract: An electrically erasable/programmable CMOS logic memory cell for RFID applications and other mobile applications includes a tunneling capacitor, a control capacitor, and a CMOS inverter that share a single floating gate. A two-phase program/erase operation performs an initial Fowler-Nordheim (F-N) injection phase using the capacitors, and then a Band-to-Band Tunneling (BBT) phase using the CMOS inverter. Both the F-N injection and BBT phases are performed using low currents and low voltages (i.e., 5V or less). The tunneling and control capacitors are fabricated in isolated P-wells (IPWs) including both N+ and a P+ regions to enable the use of both positive and negative programming voltages during the F-N and BBT programming/erasing operations.
    Type: Grant
    Filed: November 7, 2007
    Date of Patent: April 20, 2010
    Assignee: Tower Semiconductor Ltd.
    Inventors: Yakov Roizin, Evgeny Pikhay, Efraim Aloni, Adi Birman, Daniel Nehmad
  • Single Poly CMOS Logic Memory Cell For RFID Application And Its Programming And Erasing Method
    Publication number: 20080137408
    Abstract: An electrically erasable/programmable CMOS logic memory cell for RFID applications and other mobile applications includes a tunneling capacitor, a control capacitor, and a CMOS inverter that share a single floating gate. A two-phase program/erase operation performs an initial Fowler-Nordheim (F-N) injection phase using the capacitors, and then a Band-to-Band Tunneling (BBT) phase using the CMOS inverter. Both the F-N injection and BBT phases are performed using low currents and low voltages (i.e., 5V or less). The tunneling and control capacitors are fabricated in isolated P-wells (IPWs) including both N+ and a P+ regions to enable the use of both positive and negative programming voltages during the F-N and BBT programming/erasing operations.
    Type: Application
    Filed: November 7, 2007
    Publication date: June 12, 2008
    Applicant: Tower Semiconductor Ltd.
    Inventors: Yakov Roizin, Evgendy Pikhay, Efraim Aloni, Adi Birman, Daniel Nehmad