Abstract: A method for treating substrates, such as silicon wafers, wherein the substrates are immersed for some time in a bath containing a liquid and are taken therefrom so slowly that practically all of the liquid remains in the bath. The substrates are brought from the liquid directly into contact with a vapor of an organic solvent which is mixed with a carrier gas and introduced from gas leads having outlet nozzles. The vapor is miscible with the liquid to yield a mixture having a surface tension lower than that of the liquid, and which does not condense on the substrates. No drying marks with organic or metallic residues or other contaminations remain on the substrates.

Abstract: Apparatus for treating substrates, such as silicon wafers (1), wherein the substrates are immersed for some time in a bath (2) containing a liquid (3) and are taken therefrom so slowly that practically all of the liquid remains in the bath (2). The substrates (1) are brought from the liquid (3) directly into contact with a vapor of an organic solvent which is mixed with a carrier gas and introduced from gas leads (17) having outlet nozzles (18). The vapor is miscible with the liquid (3) to yield a mixture having a surface tension lower than that of the liquid, and which does not condense on the substrates. No drying marks with organic or metallic residues or other contaminations remain on the substrates (1).

Abstract: A method and an arrangement is provided for treating substrates, such as, for example, silicon wafers (1), in which the latter are immersed for some time in a bath (2) containing a liquid (1) and are then taken therefrom so slowly that practically the whole quantity of liquid remains in the bath (2). According to the invention, the substrates (1) are brought from the liquid (3) directly into contact with a vapor not condensing thereon via leads (17) with outlet nozzles (18). The vapor is of a substance miscible with the liquid (3), which, when mixed therewith, yields a mixture having a surface tension lower than that of the liquid. It has been found that no drying marks with organic or metallic residues or other contaminations then remain on the substrates (1).

Abstract: A method and an arrangement is provided for treating substrates, such as, for example, silicon wafers (1), in which the latter are immersed for some time in a bath (2) containing a liquid (3) and are then taken therefrom so slowly that practically the whole quantity of liquid remains in the bath (2). According to the invention, the substrates (1) are brought from the liquid (3) directly into contact with a vapor not condensing via leads (17) with outlet nozzles (18). The vapor is of a substance miscible with the liquid (3), which, when mixed therewith, yields a mixture having a surface tension lower than that of the liquid. It has been found that no drying marks with organic or metallic residues or other contaminations then remain on the substrates (1).

Abstract: A method is set forth of removing a liquid (3) from a surface (2) of a substrate (1), which is placed in a centrifuge (4) and is then subjected therein to a rotary movement, the substrate being rotated at such a speed that the liquid is centrifuged from the surface. According to the invention, the substrate is brought into contact in the centrifuge with a vapour of a material which is miscible with the liquid and which, when mixed therewith, yields a mixture having a surface tension which is lower than that of the liquid. Due to this step, the quantity of material remaining on the surface is strongly reduced.

Abstract: A method of removing articles having a diameter which is smaller than 0.3 .mu.m from a surface of a substrate, the method comprising moving an interface of the liquid over the surface of the substrate at a speed of up to 10 cm/sec. This is of great importance in the manufacture of integrated circuits with submicron details, in which contamination with such particles may have destructive consequences for the satisfactory operation of the circuit.

Abstract: A process for the production of dry, crack-free mechanically and chemically stable, thin, semi-permeable, inorganic membranes by coating a microporous support of sintered metal oxide or metal hydroxide with a stable sol of Boehemite particles and subsequently drying and heating the coated support.