Patents by Inventor Adriaan Johan Van Leest
Adriaan Johan Van Leest has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240014078Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.Type: ApplicationFiled: August 3, 2023Publication date: January 11, 2024Applicant: ASML NETHERLANDS B.V.Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard Mc NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER
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Patent number: 11784098Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.Type: GrantFiled: August 20, 2021Date of Patent: October 10, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
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Patent number: 11728224Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.Type: GrantFiled: July 9, 2021Date of Patent: August 15, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
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Patent number: 11710668Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.Type: GrantFiled: October 16, 2020Date of Patent: July 25, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer, Maria Isabel De La Fuente Valentin, Koen Van Witteveen, Martijn Maria Zaal, Shu-jin Wang
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Publication number: 20230035073Abstract: A method for determining a measurement recipe describing one or more measurement settings for measuring a parameter of interest from a substrate subject to an etch induced parameter error, the etch induced parameter error affecting measurement of the parameter of interest in a recipe dependent manner. The method include obtaining parameter of interest set-up data relating to measurements of at least one set-up substrate on which the parameter of interest has various first induced set values and etch induced parameter set-up data relating to measurements of at least one set-up substrate on which the etch induced parameter has various second induced set values. The recipe is determined so as to minimize the effect of the etch induced parameter on measurement of the parameter of interest.Type: ApplicationFiled: December 17, 2020Publication date: February 2, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Adriaan Johan VAN LEEST
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Publication number: 20210384086Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.Type: ApplicationFiled: August 20, 2021Publication date: December 9, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard MC NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER
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Publication number: 20210335678Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.Type: ApplicationFiled: July 9, 2021Publication date: October 28, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard Mc NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER
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Patent number: 11145557Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.Type: GrantFiled: February 14, 2020Date of Patent: October 12, 2021Assignee: ASML Netherlands B.V.Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
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Patent number: 11101184Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.Type: GrantFiled: September 17, 2019Date of Patent: August 24, 2021Assignee: ASML Netherlands B.V.Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
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Patent number: 11101185Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.Type: GrantFiled: December 19, 2019Date of Patent: August 24, 2021Assignee: ASML Netherlands B.V.Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
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Patent number: 11092900Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount.Type: GrantFiled: November 6, 2019Date of Patent: August 17, 2021Assignee: ASML Netherlands B.V.Inventors: Maurits Van Der Schaar, Youping Zhang, Hendrik Jan Hidde Smilde, Anagnostis Tsiatmas, Adriaan Johan Van Leest, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer, Paul Christiaan Hinnen
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Publication number: 20210035871Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.Type: ApplicationFiled: October 16, 2020Publication date: February 4, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard Mc NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER, Maria Isabel DE LA FUENTE VALENTIN, Koen VAN WITTEVEEN, Martijn Maria ZAAL, Shu-jin WANG
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Patent number: 10811323Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.Type: GrantFiled: February 28, 2017Date of Patent: October 20, 2020Assignee: ASML Netherlands B.V.Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer, Maria Isabel De La Fuente Valentin, Koen Van Witteveen, Martijn Maria Zaal, Shu-jin Wang
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Publication number: 20200185281Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.Type: ApplicationFiled: February 14, 2020Publication date: June 11, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard MC NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER
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Publication number: 20200126872Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.Type: ApplicationFiled: December 19, 2019Publication date: April 23, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard MC NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER
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Patent number: 10615084Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.Type: GrantFiled: February 28, 2017Date of Patent: April 7, 2020Assignee: ASML Netherlands B.V.Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
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Publication number: 20200073254Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount.Type: ApplicationFiled: November 6, 2019Publication date: March 5, 2020Applicant: ASML Netherlands B.V.Inventors: Maurits VAN DER SCHAAR, Youping ZHANG, Hendrik Jan Hidde SMILDE, Anagnostis TSIATMAS, Adriaan Johan VAN LEEST, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER, Paul Christiaan HINNEN
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Patent number: 10546790Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.Type: GrantFiled: February 28, 2017Date of Patent: January 28, 2020Assignee: ASML Netherlands B.V.Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
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Patent number: 10542925Abstract: The present invention relates to a device and method for monitoring vital signs of a subject. In particular, the device for monitoring vital signs comprises, an imaging unit for obtaining image data of said subject, an interface for receiving motion data of said subject and/or said imaging unit, a processing unit for extracting vital signs of said subject from said image data, and a control unit for adapting parameters of said imaging unit and/or said processing unit based on the received motion data. A further aspect of the invention relates to a fitness device comprising a device for monitoring vital signs and a motion detection unit for providing said device for monitoring vital signs with motion data.Type: GrantFiled: February 21, 2013Date of Patent: January 28, 2020Assignee: Koninklijke Philips N.V.Inventors: Ihor Olehovych Kirenko, Adriaan Johan Van Leest, Gerard De Haan
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Publication number: 20200013685Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.Type: ApplicationFiled: September 17, 2019Publication date: January 9, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMA, Paul Christiaan HINNEN, Elliott Gerard McNAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER