Abstract: Metallized via-holes and a wraparound metal plating are simultaneously formed on semiconductor chips by patterning a photoresist mask on the front surface of the wafer to open windows over metal pads as well as the grid areas where wraparound plating is desired; etching off the exposed metal if necessary and forming via-holes and grooves in the wafer by reactive ion etching to a depth which is less than the total thickness of the wafer; depositing a thin conductive film along the walls of the grooves and via-holes by electroless methods; plating the walls of the grooves and the via-holes with conductive metal by electrolytic methods; removing the back surface of the wafer ("backlapping") along with the floors of both the grooves and the via-holes, to expose the metal on the wall of the via-holes and separate the individual chips; and, depositing conductive metal on the back surface of the individual chips to complete the grounding path.