Patents by Inventor Adrian D. Finney

Adrian D. Finney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS/bipolar device
    Patent number: 5440164
    Abstract: An integrated device is provided which has a bipolar transistor as an output stage. The bipolar transistor is driven by a short channel metal oxide semiconductor field effect transistor. Such a device has a low on state voltage drop substantially irrespective of the potential supported by the device.
    Type: Grant
    Filed: April 6, 1994
    Date of Patent: August 8, 1995
    Assignee: Zetek plc
    Inventors: Adrian D. Finney, David N. Casey
  • Semiconductor IGBT with improved turn-off switching time
    Patent number: 5014101
    Abstract: An insulated gate bipolar transistor comprises a body of semiconductor material having four layers of alternate conductivity-type disposed between emitter and collector electrodes and an insulated gate for establishing charge carrier flow to a base region of the device adjacent the emitter region, the device further comprising a conductive path enabling charge carriers to flow from the emitter region to the base region upon turn-off. As a result the device exhibits an improved speed of turn-off.
    Type: Grant
    Filed: January 18, 1990
    Date of Patent: May 7, 1991
    Assignee: Lucas Industries Public Limited Company
    Inventor: Adrian D. Finney