Abstract: A three-dimensional (3-D) memory stack and a method of formation thereof are described. The 3-D memory stack includes a number of vertically stacked memory devices. Each memory device includes one or more memory cells. Each of the memory cells can be formed on a conductive material. Each memory device further includes one or more selector elements each configured to couple a memory cell of the one or more memory cells to a respective bit line. None of the selector elements is configured as a diode or a transistor element.

Abstract: A two terminal switching device includes a first conductive terminal, a second conductive terminal in spaced relation to the first terminal, the first terminal encompassed by the second terminal. The device also includes an electrically insulating spacer that encompasses the first terminal and provides the spaced relation between the second terminal and the first terminal. It also includes a nanotube article comprising at least one carbon nanotube, the nanotube article being arranged to overlap at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals that is capable of applying a first electrical stimulus to at least one of the first and second terminals to change the resistance of the device between the first and second terminals from a relatively low resistance to a relatively high resistance.

Abstract: A nanotube random access memory (NRAM) structure is provided. The structure includes a substrate, a gate electrode disposed in the substrate, and a first nanotube fabric disposed on the substrate. The first nanotube fabric has a channel region spaced apart from the gate electrode by a portion of the substrate. The structure also includes a drain contact contacting the first nanotube fabric. The structure also includes a second nanotube fabric disposed on the substrate, and is adjacent and connected to the first nanotube fabric. The structure also includes a source contact contacting the second nanotube fabric. The first nanotube fabric is a high-voltage fabric compared to the second nanotube fabric such that when a voltage is applied across the first nanotube fabric and the second nanotube fabric via the drain contact and the source contact, the second nanotube fabric is permitted to switch without switching the first nanotube fabric.