Abstract: Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component. The strain compensating component can be an isoelectronic element and/or an element with the same majority carrier type as the dopant. The silicon carbide crystal can then be cut into silicon carbide wafers. In some embodiments, the dopant is n-type and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof. In some embodiments, the strain compensating component comprises germanium and the dopant is nitrogen.

Abstract: Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component. The strain compensating component can be an isoelectronic element and/or an element with the same majority carrier type as the dopant. The silicon carbide crystal can then be cut into silicon carbide wafers. In some embodiments, the dopant is n-type and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof. In some embodiments, the strain compensating component comprises germanium and the dopant is nitrogen.

Abstract: Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component. The strain compensating component can be an isoelectronic element and/or an element with the same majority carrier type as the dopant. The silicon carbide crystal can then be cut into silicon carbide wafers. In some embodiments, the dopant is n-type and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof. In some embodiments, the strain compensating component comprises germanium and the dopant is nitrogen.

Abstract: Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component. The strain compensating component can be an isoelectronic element and/or an element with the same majority carrier type as the dopant. The silicon carbide crystal can then be cut into silicon carbide wafers. In some embodiments, the dopant is n-type and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof. In some embodiments, the strain compensating component comprises germanium and the dopant is nitrogen.

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Abstract: A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm?2.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm?2.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cm?2 to about 2000 cm?2.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cm?2 to about 2000 cm?2.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm?2.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm?2.

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Abstract: A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm?2, and a combined concentration of shallow level dopants less than 5E16 cm?3.

Abstract: The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises reducing the number of macrosteps in a growing crystal by incorporating a high concentration of nitrogen atoms in the initial one (1) millimeter of crystal growth.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm?2.

Abstract: A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 ?m, a bow less than about 5 ?m, and a total thickness variation of less than about 2.0 ?m.