Abstract: A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon “slim rods” commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.

Abstract: A method for making a large surface area silicon filament for production of bulk polysilicon by chemical vapor deposition (CVD) includes melting silicon and growing the filament from the melted silicon by an EFG method using a shaping die. The cross sectional shape of the silicon filament is constant over its axial length to within a tolerance of 10%. In embodiments, a plurality of identical and/or dissimilar filaments are grown simultaneously using a plurality of shaping dies. The filaments can be tubular. Filament cross sections can be annular and/or can include outwardly extending fins, with wall and/or fin thicknesses constant to within 10%. Filaments can be doped with at least one element from groups 3 and 5 of the Periodic Table. The filament can have a length equal to a length of a specified slim rod filament, and a total impedance not greater than the slim rod impedance.

Abstract: A method for making a large surface area silicon filament for production of bulk polysilicon by chemical vapor deposition (CVD) includes melting silicon and growing the filament from the melted silicon by an EFG method using a shaping die. The cross sectional shape of the silicon filament is constant over its axial length to within a tolerance of 10%. In embodiments, a plurality of identical and/or dissimilar filaments are grown simultaneously using a plurality of shaping dies. The filaments can be tubular. Filament cross sections can be annular and/or can include outwardly extending fins, with wall and/or fin thicknesses constant to within 10%. Filaments can be doped with at least one element from groups 3 and 5 of the Periodic Table. The filament can have a length equal to a length of a specified slim rod filament, and a total impedance not greater than the slim rod impedance.

Abstract: A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon “slim rods” commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.