Abstract: A plasma processing chamber for depositing a film on an underside surface of a wafer, includes showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. An upper separator fin is disposed over a top surface of the showerhead pedestal and a lower separator fin is disposed under the top surface of the showerhead pedestal and aligned with the upper separator fin. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer. In another embodiment, a top surface of the showerhead pedestal may be configured to receive a masking plate instead of the upper separator fin. The masking plate is configured with a first area that has openings and a second area that is masked. The first areas is used to provide the process gas to a portion of the underside surface of the wafer for depositing a film.

Abstract: In A bow compensation layer deposited on a backside of a bowed semiconductor substrate may modulate stress to mitigate asymmetric bowing. In some implementations, the bow compensation layer may be formed by varying precursor concentration adjacent to the backside according to a non-linear mass flow profile along the bowed semiconductor substrate. Precursor flow may be varied in a manner to match or substantially match a parabolic or polynomial function. In some implementations, a showerhead pedestal may vary precursor flow along the bowed semiconductor substrate, where the showerhead pedestal is divided into multiple zones for delivering a first gas to a first zone of a plenum volume and a second gas to a second zone of the plenum volume.

Abstract: A plasma processing chamber for depositing a film on an underside surface of a wafer, includes showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. An upper separator fin is disposed over a top surface of the showerhead pedestal and a lower separator fin is disposed under the top surface of the showerhead pedestal and aligned with the upper separator fin. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer. In another embodiment, a top surface of the showerhead pedestal may be configured to receive a masking plate instead of the upper separator fin. The masking plate is configured with a first area that has openings and a second area that is masked. The first areas is used to provide the process gas to a portion of the underside surface of the wafer for depositing a film.

Abstract: In an example embodiment, a bidirectional indexing apparatus includes a plurality of bidirectional indexing heads that can operate independently of each other or in concert to adjust a gap between a substrate and a pedestal in a substrate processing chamber. In some embodiments, a bidirectional indexing head comprises a base; a rotatable plate rotatable relative to the base, the rotatable plate including a plurality of profiled pockets each defining a camming surface therein; and a plurality of camming pins, each disposed to act on the camming surface of a respective profiled pocket to move the rotatable plate in a first or second rotatable direction when actuated.

Abstract: A valve including a valve body. An actuation housing of the valve body surrounds an actuation cavity. The actuation housing includes a first port configured for entry of actuating air and a second port configured for exhausting the actuating air. A poppet is configured for movement within the valve body and includes a barrier located within the actuation cavity. The poppet being actuated to an open position using the actuating air entering in the first port. When the poppet is in the open position, the actuating air flowing between the first port and the second port cools the stem.