Abstract: Optoelectronic device integrating a photodetector having two diodes arranged side by side, constructed from layers of semiconductor material on a substrate that also incorporates a light guide for directing light to the diodes. The two identical, juxtaposed diodes (D1, D2) are arranged head to tail. The diode ensuring the photodetection is that which is reverse biased.

Abstract: In a process for producing integrated structures having at least one cleaved optical guide, the following are successively epitaxied onto a planar surface of a monocrystalline substrate parallel to a plane of the substrate having crystal orientation <1,0,0>: an etching barrier layer for the substrate, a lower optical confinement layer, an active layer and an upper optical confinement layer. Then, the epitaxied layers are etched to form an optical guide strip having a portion oriented parallel to a first direction of crystal orientation <0,1,1> of the substrate.

Abstract: An optoelectronic device having an optical guide and photodetector integrated on a common substrate is provided with a light coupling means for increasing the absorption of light within the photodetector. This means consists of freeing the lower portion of the guide layer--opposite the photodetector--to bring it into contact with air. The use of air has the effect of repelling the light propagating through the guide layer towards the absorbent layer of the photodetector thereby increasing the photodetector efficiency.

Abstract: Optoelectronic device with an integrated optical guide and photodetector. This device comprises a partial reflecting layer (CR) inserted between the lower confinement layer (CiC) and the guide layer (CG). Application to optical telecommunications.