Patents by Inventor Advanced Semiconductor Engineering, Inc.

Advanced Semiconductor Engineering, Inc. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE HAVING INTEGRATED PASSIVE DEVICE AND PROCESS FOR MANUFACTURING THE SAME
    Publication number: 20140252547
    Abstract: The present invention relates to a semiconductor device and a process for fabricating the same. In one embodiment, the semiconductor device includes a substrate and a plurality of integrated passive devices. The integrated passive devices are disposed on the substrate and include at least two capacitors which have different capacitance values.
    Type: Application
    Filed: March 8, 2013
    Publication date: September 11, 2014
    Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventor: ADVANCED SEMICONDUCTOR ENGINEERING, Inc.
  • SEMICONDUCTOR LEAD FRAME PACKAGE AND LED PACKAGE
    Publication number: 20140159098
    Abstract: The present invention relates to a semiconductor lead frame package and LED package. The semiconductor lead frame package includes a die pad, a lead, a die and an insulator body. The lead is electrically isolated from the die pad. The die is disposed on the die pad and electrically connected to the lead. The insulator body partially encapsulates the die pad and the lead, and has a top surface and a bottom surface, wherein a part of the lead is folded onto the top surface of the insulator body.
    Type: Application
    Filed: December 11, 2012
    Publication date: June 12, 2014
    Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventor: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
  • STRUCTURE OF EMBEDDED-TRACE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20130122216
    Abstract: A method of manufacturing an embedded-trace substrate is provided. First, a core plate is provided. Next, a through hole and a plurality of trenches are formed on the core plate, wherein the through hole passes through the core plate, and the trenches are formed on the upper and the lower surfaces of the core plate. Then, the core plate is subjected to one-plating step for electroplating a conductive material in the through hole and the trenches at the same time. Afterwards, the excess conductive material is removed.
    Type: Application
    Filed: January 4, 2013
    Publication date: May 16, 2013
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventor: Advanced Semiconductor Engineering, Inc.