Patents by Inventor Afshin Dadvand

Afshin Dadvand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • 3,7-bis(2-oxoindolin-3-ylidene)benzo[1,2-b:4,5-b?]difuran-2,6-dione dicyanide-based materials and uses thereof in organic electronic devices
    Patent number: 11545633
    Abstract: The development of air-stable unipolar n-type semiconductors with good solubility in organic solvents at room temperature remains a critical issue in the field of organic electronics. Moreover, most of the existing semiconducting materials exhibit LUMO energy levels higher than ?4.0 eV, making electron transport sensitive to both moisture and oxygen. Bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are disclosed herein. More specifically, bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof for use in organic electronics are disclosed. A process for the preparation of bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide and derivatives is also disclosed. The bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are characterized by high electron mobilities and are suitable for use as n-type semiconductors in organic electronics.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: January 3, 2023
    Assignees: NATIONAL RESEARCH COUNCIL OF CANADA
    Inventors: Jianping Lu, Afshin Dadvand, Mark Bortolus, Salima Alem, Ye Tao, Yuning Li, Jesse Quinn
  • 3,7-BIS(2-OXOINDOLIN-3-YLIDENE)BENZO[1,2-B:4,5-B']DIFURAN-2,6-DIONE DICYANIDE-BASED MATERIALS AND USES THEREOF IN ORGANIC ELECTRONIC DEVICES
    Publication number: 20210013424
    Abstract: The development of air-stable unipolar n-type semiconductors with good solubility in organic solvents at room temperature remains a critical issue in the field of organic electronics. Moreover, most of the existing semiconducting materials exhibit LUMO energy levels higher than ?4.0 eV, making electron transport sensitive to both moisture and oxygen. Bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are disclosed herein. More specifically, bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof for use in organic electronics are disclosed. A process for the preparation of bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide and derivatives is also disclosed. The bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are characterized by high electron mobilities and are suitable for use as n-type semiconductors in organic electronics.
    Type: Application
    Filed: March 13, 2019
    Publication date: January 14, 2021
    Applicant: NATIONAL RESEARCH COUNCIL OF CANADA
    Inventors: Jianping LU, Afshin DADVAND, Mark BORTOLUS, Salima ALEM, Ye TAO, Yuning LI, Jesse QUINN
  • Method of printing ultranarrow-gap lines
    Patent number: 10125285
    Abstract: Disclosed is a method of printing ultranarrow-gap lines of a functional material, such as an electrically conductive silver ink. The method entails providing a substrate having an interlayer coated on the substrate and printing the ultranarrow-gap lines by depositing ink on the interlayer of the substrate, the ink comprising the functional material and a solvent that swells the interlayer to cause the interlayer to bulge at edges of the ink to thereby define embankments that confine the ink.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: November 13, 2018
    Assignee: National Research Council of Canada
    Inventors: Ta-Ya Chu, Christophe Py, Ye Tao, Zhiyi Zhang, Afshin Dadvand
  • METHOD OF PRINTING ULTRANARROW-GAP LINES
    Publication number: 20180187036
    Abstract: Disclosed is a method of printing ultranarrow-gap lines of a functional material, such as an electrically conductive silver ink. The method entails providing a substrate having an interlayer coated on the substrate and printing the ultranarrow-gap lines by depositing ink on the interlayer of the substrate, the ink comprising the functional material and a solvent that swells the interlayer to cause the interlayer to bulge at edges of the ink to thereby define embankments that confine the ink.
    Type: Application
    Filed: June 30, 2016
    Publication date: July 5, 2018
    Inventors: Ta-Ya Chu, Christophe Py, Ye Tao, Zhiyi Zhang, Afshin Dadvand