Patents by Inventor Ahmet Erbil

Ahmet Erbil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4992305
    Abstract: Coatings of Group IIA metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## wherein M is a transition metal of Group VB, VIB, VIIB or VIII, R.sub.1 is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, R.sub.2 is a hydrogen or lower alkyl or alkenyl radical, n is the valence of M and is an integer from 2 to 4, and p is an integer from 0 to (n-1), is contacted with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as manganese telluride can be deposited from a manganese compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.
    Type: Grant
    Filed: June 22, 1988
    Date of Patent: February 12, 1991
    Assignee: Georgia Tech Research Corporation
    Inventor: Ahmet Erbil
  • Patent number: 4927670
    Abstract: Mixed metal oxide films containing Group IIa metals and transition metals are deposited on a heated substrate by a chemical vapor deposition process using alkylcyclopentadienyl metal compound precursors and an oxidizing agent.
    Type: Grant
    Filed: June 22, 1988
    Date of Patent: May 22, 1990
    Assignee: Georgia Tech Research Corporation
    Inventor: Ahmet Erbil
  • Patent number: 4915988
    Abstract: Coatings of Group IIA metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIA metal, preferably magnesium, calcium, strontium, or barium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as barium selenide can be deposited from a barium compound of formula I and a heat decomposable selenium compound under nonoxidizing conditions. Group II metal oxides and salts, such as barium titanate, are obtainable by deposition from a compound of formula I (and an additional titanium organometallic compound (under oxidizing conditions.
    Type: Grant
    Filed: June 22, 1988
    Date of Patent: April 10, 1990
    Assignee: Georgia Tech Research Corporation
    Inventor: Ahmet Erbil
  • Patent number: 4882206
    Abstract: Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.
    Type: Grant
    Filed: June 22, 1988
    Date of Patent: November 21, 1989
    Assignee: Georgia Tech Research Corporation
    Inventor: Ahmet Erbil
  • Patent number: 4880670
    Abstract: Coatings of Group IB metals are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IB metal such as copper, and R is a lower alkyl radical containing from 1 to about 6 carbon atoms, is contacted under nonoxidizing conditions with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as copper indium diselenide can be deposited from a copper oxide compound of formula I and a heat decomposable selenium and indium compounds under nonoxidizing conditions. Group II metal oxides and salts, such as barium titanate, are obtainable by deposition from a compound of formula I (and an additional organometallic compound when required) under oxidizing conditions.
    Type: Grant
    Filed: June 22, 1988
    Date of Patent: November 14, 1989
    Assignee: Georgia Tech Research Corporation
    Inventor: Ahmet Erbil