Patents by Inventor Aibin HU

Aibin HU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of formation of a TI-IGBT
    Patent number: 9461116
    Abstract: A TI-IGBT, comprising a first semiconductor substrate, a second semiconductor substrate, and a first doped layer; a short circuit region and a collector region disposed in parallel are formed in the first semiconductor substrate; the short circuit region and the collector region have different doping types; the second semiconductor substrate is located on the upper surface of the first semiconductor substrate, and has the same doping type with the short circuit region; the first doped layer is located between the first semiconductor substrate and the second semiconductor substrate, and covers at least the collector region; the first doped layer has the same doping type with the second semiconductor substrate, and has a doping concentration smaller than that of the second semiconductor substrate.
    Type: Grant
    Filed: December 6, 2012
    Date of Patent: October 4, 2016
    Assignees: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, SHANGHAI LIANXING ELECTRONICS CO., LTD., JIANGSU CAS IGBT TECHNOLOGY CO., LTD.
    Inventors: Yangjun Zhu, Wenliang Zhang, Shuojin Lu, Xiaoli Tian, Aibin Hu
  • TI-IGBT AND FORMATION METHOD THEREOF
    Publication number: 20150349102
    Abstract: A TI-IGBT, comprising a first semiconductor substrate, a second semiconductor substrate, and a first doped layer; a short circuit region and a collector region disposed in parallel are formed in the first semiconductor substrate; the short circuit region and the collector region have different doping types; the second semiconductor substrate is located on the upper surface of the first semiconductor substrate, and has the same doping type with the short circuit region; the first doped layer is located between the first semiconductor substrate and the second semiconductor substrate, and covers at least the collector region; the first doped layer has the same doping type with the second semiconductor substrate, and has a doping concentration smaller than that of the second semiconductor substrate.
    Type: Application
    Filed: December 6, 2012
    Publication date: December 3, 2015
    Inventors: Yangjun ZHU, Wenliang ZHANG, Shuojin LU, Xiaoli TIAN, Aibin HU