Abstract: An electronic device includes a first body, a second body, a connection device, and a flexible screen. The second body includes a first part and a second part. The second part is slidable to be pulled out relative to the first part to form an extended part or retracted to form a hidden part. The connection device connects the first body and the first part and includes a first shaft connected to the first part. The flexible screen covers the first body and the first part and covers the extended part when the second part is pulled out relative to the first part. The first part includes a lock structure. In response to the second part being retracted relative to the first part, the lock structure is in a first state.

Abstract: The present invention relates to a composite tantalum powder and a process for preparing the same, and to a capacitor anode prepared from the tantalum powder. The method for preparing a composite tantalum powder comprises the following steps of: 1) providing a tantalum powder prepared by a reduction process, and flattening the tantalum powder so as to prepare a flaked tantalum powder; 2) providing a granular tantalum powder prepared from tantalum ingot; 3) mixing the flaked tantalum powder and the granular tantalum powder to give a tantalum powder mixture; and 4) thermally treating the tantalum powder mixture, and then pulverizing, screening to give a composite tantalum powder. The present invention further relates to a composite tantalum powder prepared from the process and the use thereof in a capacitor.

Abstract: A method for providing a tantalum powder with a piece+block structure, comprising the following steps: 1) providing a granulous tantalum powder, and dividing same into a first part and a second part; 2) putting the first part of the tantalum powder in a ball mill for ball milling, taking the powder out after the ball milling and sieving same, and obtaining a tantalum powder in the form of a piece; 3) mixing the tantalum powder in the form of a piece and the second part of the tantalum powder to obtain a mixture, and preferably, the mixing proportion of the tantalum powder in the form of a piece and the granulous tantalum powder being 1:0.1˜1, preferably being 1:0.25˜0.8, and more preferably being 1:0.4˜0.6; and 4) performing the steps of water washing, acid washing, and nodularization on the mixture to finally obtain a tantalum powder with a piece+block structure.

Abstract: A method for preparing a tantalum power of capacitor grade, comprising: solid tantalum nitride is added when potassium fluotantalate is reduced by sodium. The method increases the nitrogen content in the tantalum powder, and at the same time improves the electrical performance of the tantalum powder. The specific capacitance is increased, and the leakage current and loss is improved. The qualification rate of the anode and the capacitor product is also improved. The method is characterized in that the nitrogen in the tantalum nitride diffuses between the particles of the tantalum powder, with substantially no loss, and thus the nitrogen content is accurate and controllable.

Abstract: The present invention relates to a composite tantalum powder and a process for preparing the same, and to a capacitor anode prepared from the tantalum powder. The method for preparing a composite tantalum powder comprises the following steps of: 1) providing a tantalum powder prepared by a reduction process, and flattening the tantalum powder so as to prepare a flaked tantalum powder; 2) providing a granular tantalum powder prepared from tantalum ingot; 3) mixing the flaked tantalum powder and the granular tantalum powder to give a tantalum powder mixture; and 4) thermally treating the tantalum powder mixture, and then pulverizing, screening to give a composite tantalum powder. The present invention further relates to a composite tantalum powder prepared from the process and the use thereof in a capacitor.

Abstract: The present invention relates to a full-Si molecular sieve, wherein the full-Si molecular sieve has a Q4/Q3 of (10-90):1 wherein Q4 is the peak strength at the chemical shift of ?112±2 ppm in the 29Si NMR spectrum of the full-Si molecular sieve, expressed as the peak height relative to the base line; and Q3 is the peak strength at the chemical shift of ?103±2 ppm in the 29Si NMR spectrum of the full-Si molecular sieve, expressed as the peak height relative to the base line.

Abstract: A method for providing a tantalum powder with a piece+block structure, comprising the following steps: 1) providing a granulous tantalum powder, and dividing same into a first part and a second part; 2) putting the first part of the tantalum powder in a ball mill for ball milling, taking the powder out after the ball milling and sieving same, and obtaining a tantalum powder in the form of a piece; 3) mixing the tantalum powder in the form of a piece and the second part of the tantalum powder to obtain a mixture, and preferably, the mixing proportion of the tantalum powder in the form of a piece and the granulous tantalum powder being 1:0.1˜1, preferably being 1:0.25˜0.8, and more preferably being 1:0.4˜0.6; and 4) performing the steps of water washing, acid washing, and nodularization on the mixture to finally obtain a tantalum powder with a piece+block structure.

Abstract: A method for preparing a tantalum power of capacitor grade, comprising: solid tantalum nitride is added when potassium fluotantalate is reduced by sodium. The method increases the nitrogen content in the tantalum powder, and at the same time improves the electrical performance of the tantalum powder. The specific capacitance is increased, and the leakage current and loss is improved. The qualification rate of the anode and the capacitor product is also improved. The method is characterized in that the nitrogen in the tantalum nitride diffuses between the particles of the tantalum powder, with substantially no loss, and thus the nitrogen content is accurate and controllable.

Abstract: The present invention relates to a full-Si molecular sieve, wherein the full-Si molecular sieve has a Q4/Q3 of (10-90):1.

Abstract: A method for passivating tantalum metal surface is provided, the method comprises cooling tantalum metal to or below 32° C. and/or passivating tantalum metal surface by oxygen-containing gas with a temperature of 0° C. or below. Also provided is an apparatus for passivating tantalum metal surface for applying the method, comprising a heat treatment furnace, an argon forced-cooling device and/or a device for cooling oxygen-containing gas.

Abstract: The present invention relates to valve metal particles uniformly containing nitrogen and a method for preparing the same, and a valve metal green pellet and a sintered pellet made from the particles, and an electrolytic capacitor anode. The present invention provides valve metal particles uniformly containing nitrogen, wherein the difference ratio of nitrogen contents of particles is 20% or less. The present invention provides a process for preparing said valve metal particles uniformly containing nitrogen, wherein the raw material particles of the valve metal were heated in a nitrogen-containing gas at a temperature of 200° C. or less for 2 hours or more. The present invention also provides a valve metal green pellet made from said valve metal particles. The present invention also provides a valve metal sintered pellet.

Abstract: A method for spherically granulating and agglomerating metal particles such as tantalum and/or niobium powders is described in the present invention, which includes the steps of: a). comminuting the metal particles to form fine particles having D50 less than 50 ?m; b). granulating the comminuted metal particles comprising volatile liquid, for example, tantalum and/or niobium particles comprising volatile liquid, to form wet spherical particles; c). still drying the wet spherical particles and removing volatile liquid to form flowable pre-agglomerated particles with increased bulk density; d). heat treating the pre-agglomerated particles; e). screening the heat treated powder to obtain the flowable agglomerated particles. The present invention provides a flowable spherical agglomerated metal particles, and especially tantalum and/or niobium particles having improved properties. The present agglomerated tantalum powder have a flow rate of at least about 2.0 g/sec, a BET surface area of from about 0.

Abstract: The present invention relates to valve metal particles uniformly containing nitrogen and a method for preparing the same, and a valve metal green pellet and a sintered pellet made from the particles, and an electrolytic capacitor anode. The present invention provides valve metal particles uniformly containing nitrogen, wherein the difference ratio of nitrogen contents of particles is 20% or less. The present invention provides a process for preparing said valve metal particles uniformly containing nitrogen, wherein the raw material particles of the valve metal were heated in a nitrogen-containing gas at a temperature of 200° C. or less for 2 hours or more. The present invention also provides a valve metal green pellet made from said valve metal particles. The present invention also provides a valve metal sintered pellet.

Abstract: A method for spherically granulating and agglomerating metal particles such as tantalum and/or niobium powders is described in the present invention, which includes the steps of: a). comminuting the metal particles to form fine particles having D50 less than 50 ?m; b). granulating the comminuted metal particles comprising volatile liquid, for example, tantalum and/or niobium particles comprising volatile liquid, to form wet spherical particles; c). still drying the wet spherical particles and removing volatile liquid to form flowable pre-agglomerated particles with increased bulk density; d). heat treating the pre-agglomerated particles; e). screening the heat treated powder to obtain the flowable agglomerated particles. The present invention provides a flowable spherical agglomerated metal particles, and especially tantalum and/or niobium particles having improved properties. The present agglomerated tantalum powder have a flow rate of at least about 2.0 g/sec, a BET surface area of from about 0.