Patents by Inventor Aimin Song
Aimin Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220278241Abstract: A tuning method for active metamaterials using IGZO Schottky diodes, wherein the IGZO Schottky diode comprises a substrate, a Schottky electrode, amorphous IGZO active layer, and an ohmic electrode from the bottom up. The method comprises steps as follows: (1) Metamaterials are used as the Schottky electrodes, and amorphous IGZO active layers are used to fully cover the capacitive gap structures in the metamaterials; such capacitive structures in the metamaterials are bonded to the amorphous IGZO active layers to form Shottky barriers; (2) The resulting IGZO Schottky diodes from step (1) are used to tune the metamaterials dynamically.Type: ApplicationFiled: June 28, 2020Publication date: September 1, 2022Inventors: Yifei ZHANG, Aimin SONG, Haotian LING, Qingpu WANG
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Publication number: 20220052198Abstract: Device and method A Schottky barrier thin-film transistor (SBTFT) 200A is described. The SBTFT 200A comprises a gate contact (110), a gate insulator layer (120), a Schottky source contact (150) and a conductive oxide drain contact (140) in contact with the source contact (150). Also described is an inverter, a logic gate, an integrated circuit, an analogue circuit, a pixel for a display, for example a liquid crystal display, LCD, or an organic light emitting diode display, OLED, or a display, for example a LCD or an OLED, comprising such a Schottky barrier thin-film transistor, SBTFT. Also described is a method of providing such a Schottky barrier thin-film transistor.Type: ApplicationFiled: December 20, 2019Publication date: February 17, 2022Inventors: Aimin Song, Jiawei Zhang, Joshua Wilson
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Publication number: 20200340097Abstract: Embodiments of the present invention provide a sputtered silicon oxide electrolyte and a method for producing the same, wherein one or more of the predetermined pressure of the working gas and the power density per target unit area are controlled such that the sputtered silicon oxide electrolyte has an amorphous structure, a density of between 0.5 to 2.0 g/cm3 and a unit area capacitance of between 0.05 to 15.0 ?F/cm2 at 10-200 Hz.Type: ApplicationFiled: February 5, 2018Publication date: October 29, 2020Inventors: Aimin Song, Xiaochen Ma
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Patent number: 9123894Abstract: A method of manufacturing an electronic device, comprising a layer of semiconductive material and at least one insulative feature arranged to interrupt the layer of semiconductive material, comprises: providing a layer of semiconductive material, and a layer of compressible material supporting the layer of semiconductive material; and forming the or each insulative feature by a method comprising displacing a respective selected portion of the layer of semiconductive material towards the compressible material so as to compress compressible material under the or each displaced portion and separate at least partly the or each displaced portion from undisplaced semiconductive material.Type: GrantFiled: January 27, 2010Date of Patent: September 1, 2015Assignee: Pragmatic Printing Ltd.Inventors: Aimin Song, Stephen Whitelegg, Yanming Sun, Shiwei Lin
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Patent number: 9076851Abstract: An electronic device includes a substrate supporting mobile charge carriers, insulative features formed on the substrate surface to define first and second substrate areas on either side of the insulative features, the first and second substrate areas being connected by an elongate channel defined by the insulative features, the channel providing a charge carrier flow path in the substrate from the first area to the second area, the conductivity between the first and second substrate areas being dependent upon the potential difference between the areas. The mobile charge carriers can be within at least two modes in each of the three dimensions within the substrate. The substrate can be an organic material. The mobile charge carriers can have a mobility within the range 0.01 cm2/Vs to 100 cm2/Vs, and the electronic device may be an RF device. Methods for forming such devices are also described.Type: GrantFiled: December 20, 2013Date of Patent: July 7, 2015Assignee: PRAGMATIC PRINTING LIMITEDInventor: Aimin Song
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Publication number: 20140110668Abstract: An electronic device includes a substrate supporting mobile charge carriers, insulative features formed on the substrate surface to define first and second substrate areas on either side of the insulative features, the first and second substrate areas being connected by an elongate channel defined by the insulative features, the channel providing a charge carrier flow path in the substrate from the first area to the second area, the conductivity between the first and second substrate areas being dependent upon the potential difference between the areas. The mobile charge carriers can be within at least two modes in each of the three dimensions within the substrate. The substrate can be an organic material. The mobile charge carriers can have a mobility within the range 0.01 cm2/Vs to 100 cm2/Vs, and the electronic device may be an RF device. Methods for forming such devices are also described.Type: ApplicationFiled: December 20, 2013Publication date: April 24, 2014Applicant: PRAGMATIC PRINTING LIMITEDInventor: Aimin Song
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Patent number: 8624216Abstract: An electronic device includes a substrate supporting mobile charge carriers, insulative features formed on the substrate surface to define first and second substrate areas on either side of the insulative features, the first and second substrate areas being connected by an elongate channel defined by the insulative features, the channel providing a charge carrier flow path in the substrate from the first area to the second area, the conductivity between the first and second substrate areas being dependent upon the potential difference between the areas. The mobile charge carriers can be within at least two modes in each of the three dimensions within the substrate. The substrate can be an organic material. The mobile charge carriers can have a mobility within the range 0.01 cm2/Vs to 100 cm2/Vs, and the electronic device may be an RF device. Methods for forming such devices are also described.Type: GrantFiled: May 9, 2006Date of Patent: January 7, 2014Assignee: Pragmatic Printing LimitedInventor: Aimin Song
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Publication number: 20120153428Abstract: A method of manufacturing an electronic device, comprising a layer of semiconductive material and at least one insulative feature arranged to interrupt the layer of semiconductive material, comprises: providing a layer of semiconductive material, and a layer of compressible material supporting the layer of semiconductive material; and forming the or each insulative feature by a method comprising displacing a respective selected portion of the layer of semiconductive material towards the compressible material so as to compress compressible material under the or each displaced portion and separate at least partly the or each displaced portion from undisplaced semiconductive material.Type: ApplicationFiled: January 27, 2010Publication date: June 21, 2012Inventors: Aimin Song, Stephen Whitelegg, Yanming Sun, Shiwei Lin
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Patent number: 7715229Abstract: A memory device includes a memory unit comprising a substrate supporting mobile charge carriers. Insulative features formed on the substrate surface define first and second substrate areas on either side of the insulative features areas being connected by an elongate channel defined by the insulative features. The memory unit is switchable between first and second states in which the channel respectively provides a first conductance and a second, different conductance between the first and second areas at a predetermined potential difference between said first and second. A write circuit is arranged to apply a first potential difference across the first and second areas for changing the memory unit to the first state, and a second, different potential difference for changing the memory unit to the second state. A read circuit is arranged to apply the predetermined potential difference across the first and second areas for reading the state.Type: GrantFiled: July 14, 2005Date of Patent: May 11, 2010Assignee: Nano EPrint LimitedInventor: Aimin Song
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Publication number: 20090315017Abstract: An electronic device includes a substrate supporting mobile charge carriers, insulative features formed on the substrate surface to define first and second substrate areas on either side of the insulative features, the first and second substrate areas being connected by an elongate channel defined by the insulative features, the channel providing a charge carrier flow path in the substrate from the first area to the second area, the conductivity between the first and second substrate areas being dependent upon the potential difference between the areas. The mobile charge carriers can be within at least two modes in each of the three dimensions within the substrate. The substrate can be an organic material. The mobile charge carriers can have a mobility within the range 0.01 cm2/Vs to 100 cm2/Vs, and the electronic device may be an RF device. Methods for forming such devices are also described.Type: ApplicationFiled: May 9, 2006Publication date: December 24, 2009Applicant: NANO EPRINT LIMITEDInventor: Aimin Song
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Publication number: 20080130356Abstract: A memory device, and associated methods of manufacture and operation are described. The memory device includes at least one memory unit comprising a substrate (120) supporting mobile charge carriers. Insulative features (130, 132, 134) formed on the substrate surface define first and second substrate areas (122, 124) on either side of the insulative features. The first and second substrate areas are connected by an elongate channel (140) defined by the insulative features. The memory unit is switchable between a first state in which the channel provides a first conductance between the first and second areas at a predetermined potential difference between said first and second areas, and a second state in which the channel provides a second, different conductance between the first and second areas at the predetermined potential difference.Type: ApplicationFiled: July 14, 2005Publication date: June 5, 2008Applicant: THE UNIVERSITY OF MANCHESTERInventor: Aimin Song
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Publication number: 20040235054Abstract: The present invention provides a library of compounds, wherein each compound is encoded by several coding building blocks that are each separately attached to a solid support via a cleavable linker. Following screening of the compounds, the coding tags can be cleaved, and then characterized by mass spectrometry.Type: ApplicationFiled: March 25, 2004Publication date: November 25, 2004Applicant: The Regents of the University of CaliforniaInventors: Kit S. Lam, Aimin Song, Carlito B. Lebrilla, Jinhua Zhang
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Publication number: 20040149679Abstract: Diode devices with superior and pre-settable characteristics and of nanometric dimensions, comprise etched insulative lines (8, 16, 18) in a conductive substrate to define between the lines charge carrier flow paths, formed as elongate channels (20) at least 100 nm long and less than 100 nm wide. The current-voltage characteristic of the diode devices are similar to a conventional diode, but both the threshold voltage (from 0V to a few volts) and the current level (from nA to &mgr;A) can be tuned by orders of magnitude by changing the device geometry. Standard silicon wafers can be used as substrates. A full family of logic gates, such as OR, AND, and NOT, can be constructed based on this device solely by simply etching insulative lines in the substrate.Type: ApplicationFiled: March 26, 2004Publication date: August 5, 2004Inventors: Aimin Song, Par Omling