Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high-electron-mobility transistors and methods of manufacture. A structure includes: a semiconductor layer on a semiconductor material; a gate structure on the semiconductor layer; a drain region comprising the semiconductor layer and which is adjacent to the gate structure; an ohmic contact which includes at least one terminal connection connecting to the semiconductor material, the ohmic contact being adjacent to the drain region and spaced away from the gate structure; and a capacitance reducing structure adjacent to the drain region.

Abstract: Disclosed are embodiments of a transistor (e.g., a III-V high electron mobility transistor (HEMT), a III-V metal-insulator-semiconductor HEMT (MISHEMT), or the like) that has multiple self-aligned terminals. The self-aligned terminals include a self-aligned gate, a self-aligned source terminal and, optionally, a self-aligned drain terminal. By forming self-aligned terminals during processing, the separation distances between the terminals (e.g., between the gate and source terminal and, optionally, between the gate and drain terminal) can be reduced in order to reduce device size and to improve performance (e.g., to reduce on resistance and increase switching speeds). Also disclosed herein are method embodiments for forming such a transistor.

Abstract: Systems and methods of reconfiguring machine learning models are disclosed. A method includes receiving, by a server computer, external data and determining, by the server computer, a machine learning model from a plurality of machine learning models, based on the external data. The plurality of machine learning models are in standby mode. The server computer configures an AI engine with the machine learning model. The method also includes receiving, by the server computer, a prediction request from a client computer, processing the prediction request with the AI engine to form a prediction response, and sending the prediction response to the client computer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a stepped emitter and methods of manufacture. The structure includes: a collector; a base over the collector; and an emitter over the base, the emitter comprising at least one stepped feature over the base.

Abstract: Disclosed are a transistor and a method for forming the transistor. The method includes concurrently forming gate and source/drain openings through an uppermost layer (i.e., a dielectric layer) in a stack of layers. The method can further include: depositing and patterning gate conductor material so that a first gate section is in the gate opening and a second gate section is above the gate opening and so that the source/drain openings are exposed; extending the depth of the source/drain openings; and depositing and patterning source/drain conductor material so that a first source/drain section is in each source/drain opening and a second source/drain section is above each source/drain opening. Alternatively, the method can include: forming a plug in the gate opening and sidewall spacers in the source/drain openings; extending the depth of source/drain openings; depositing and patterning the source/drain conductor material; and subsequently depositing and patterning the gate conductor material.

Abstract: Disclosed are a transistor and a method for forming the transistor. The method includes concurrently forming gate and source/drain openings through an uppermost layer (i.e., a dielectric layer) in a stack of layers. The method can further include: depositing and patterning gate conductor material so that a first gate section is in the gate opening and a second gate section is above the gate opening and so that the source/drain openings are exposed; extending the depth of the source/drain openings; and depositing and patterning source/drain conductor material so that a first source/drain section is in each source/drain opening and a second source/drain section is above each source/drain opening. Alternatively, the method can include: forming a plug in the gate opening and sidewall spacers in the source/drain openings; extending the depth of source/drain openings; depositing and patterning the source/drain conductor material; and subsequently depositing and patterning the gate conductor material.

Abstract: Disclosed are embodiments of a transistor (e.g., a III-V high electron mobility transistor (HEMT), a III-V metal-insulator-semiconductor HEMT (MISHEMT), or the like) that has multiple self-aligned terminals. The self-aligned terminals include a self-aligned gate, a self-aligned source terminal and, optionally, a self-aligned drain terminal. By forming self-aligned terminals during processing, the separation distances between the terminals (e.g., between the gate and source terminal and, optionally, between the gate and drain terminal) can be reduced in order to reduce device size and to improve performance (e.g., to reduce on resistance and increase switching speeds). Also disclosed herein are method embodiments for forming such a transistor.

Abstract: The present disclosure relates to integrated circuits, and more particularly, to an anti-tamper x-ray blocking package for secure integrated circuits and methods of manufacture and operation. In particular, the present disclosure relates to a structure including: one or more devices on a front side of a semiconductor material; a plurality of patterned metal layers under the one or more devices, located and structured to protect the one or more devices from an active intrusion; an insulator layer between the plurality of patterned metal layers; and at least one contact providing an electrical connection through the semiconductor material to a front side of the plurality of metals.

Abstract: Disclosed are a transistor and a method for forming the transistor. The method includes concurrently forming gate and source/drain openings through an uppermost layer (i.e., a dielectric layer) in a stack of layers. The method can further include: depositing and patterning gate conductor material so that a first gate section is in the gate opening and a second gate section is above the gate opening and so that the source/drain openings are exposed; extending the depth of the source/drain openings; and depositing and patterning source/drain conductor material so that a first source/drain section is in each source/drain opening and a second source/drain section is above each source/drain opening. Alternatively, the method can include: forming a plug in the gate opening and sidewall spacers in the source/drain openings; extending the depth of source/drain openings; depositing and patterning the source/drain conductor material; and subsequently depositing and patterning the gate conductor material.

Abstract: The present disclosure relates to integrated circuits, and more particularly, to an anti-tamper x-ray blocking package for secure integrated circuits and methods of manufacture and operation. In particular, the present disclosure relates to a structure including: one or more devices on a front side of a semiconductor material; a plurality of patterned metal layers under the one or more devices, located and structured to protect the one or more devices from an active intrusion; an insulator layer between the plurality of patterned metal layers; and at least one contact providing an electrical connection through the semiconductor material to a front side of the plurality of metals.

Abstract: Systems and methods of reconfiguring machine learning models are disclosed. A method includes receiving, by a server computer, external data and determining, by the server computer, a machine learning model from a plurality of machine learning models, based on the external data. The plurality of machine learning models are in standby mode. The server computer configures an AI engine with the machine learning model. The method also includes receiving, by the server computer, a prediction request from a client computer, processing the prediction request with the AI engine to form a prediction response, and sending the prediction response to the client computer.

Abstract: The present disclosure relates to an active x-ray attack prevention structure for secure integrated circuits. In particular, the present disclosure relates to a structure including a functional circuit, and at least one latchup sensitive diode circuit configured to induce a latchup condition in the functional circuit, placed in proximity of the functional circuit.

Abstract: The present disclosure relates to an active x-ray attack prevention structure for secure integrated circuits. In particular, the present disclosure relates to a structure including a functional circuit, and at least one latchup sensitive diode circuit configured to induce a latchup condition in the functional circuit, placed in proximity of the functional circuit.

Abstract: Systems and methods of reconfiguring machine learning models are disclosed. A method includes receiving, by a server computer, external data and determining, by the server computer, a machine learning model from a plurality of machine learning models, based on the external data. The plurality of machine learning models are in standby mode. The server computer configures an AI engine with the machine learning model. The method also includes receiving, by the server computer, a prediction request from a client computer, processing the prediction request with the AI engine to form a prediction response, and sending the prediction response to the client computer.

Abstract: The present disclosure relates to a metal layer for an active x-ray attack prevention device for securing integrated circuits. In particular, the present disclosure relates to a structure including a semiconductor material, one or more devices on a front side of the semiconductor material, a backside patterned metal layer under the one or more devices, located and structured to protect the one or more devices from an active intrusion, and at least one contact providing an electrical connection through the semiconductor material to a front side of the backside patterned metal layer. The backside patterned metal layer is between a wafer and one of the semiconductor material and an insulator layer.

Abstract: Systems and methods of reconfiguring machine learning models are disclosed. A method includes receiving, by a server computer, external data and determining, by the server computer, a machine learning model from a plurality of machine learning models, based on the external data. The plurality of machine learning models are in standby mode. The server computer configures an AI engine with the machine learning model. The method also includes receiving, by the server computer, a prediction request from a client computer, processing the prediction request with the AI engine to form a prediction response, and sending the prediction response to the client computer.

Abstract: A method, system, and computer program product for maintaining model state at model data centers hosting a same machine learning model may receive first input data input, at a first time, to a first implementation of a model to generate first output data, the first implementation of the model being associated with a first model state at a time before the first time; receive second input data input, at a second time different than the first time, to a second implementation of the model to generate second output data, the second implementation of the model being associated with a second model state at a time before the second time; determine, based on the first input data and the second input data, update data for the first model state of the first implementation and the second model state of the second implementation; and provide, at a third time subsequent to the first time and the second time, the update data.

Abstract: Fabrication methods and device structures for a silicon controlled rectifier. A cathode is arranged over a top surface of a substrate and a well is arranged beneath the top surface of the substrate. The cathode is composed of a semiconductor material having a first conductivity type, and the well also has the first conductivity type. A semiconductor layer, which has a second conductivity type opposite to the first conductivity type, includes a section over the top surface of the substrate. The section of the semiconductor layer is arranged to form an anode that adjoins the well along a junction.

Abstract: Fabrication methods and device structures for a silicon controlled rectifier. A cathode is arranged over a top surface of a substrate and a well is arranged beneath the top surface of the substrate. The cathode is composed of a semiconductor material having a first conductivity type, and the well also has the first conductivity type. A semiconductor layer, which has a second conductivity type opposite to the first conductivity type, includes a section over the top surface of the substrate. The section of the semiconductor layer is arranged to form an anode that adjoins the well along a junction.