Abstract: Structures for a polarizer and methods of fabricating a structure for a polarizer. A waveguide crossing includes a first arm and a second arm. A waveguide loop couples the first arm of the waveguide crossing to the second arm of the waveguide crossing. The waveguide crossing and the waveguide loop provide a structure for the polarizer.

Abstract: Structures for an optical coupler and methods of fabricating a structure for an optical coupler. A first waveguide core has a first tapered section and a second waveguide core has a second tapered section positioned adjacent to the first tapered section. The first tapered section has a first shape determined by a first non-linear function, and the second tapered section has a second shape determined by a second non-linear function.

Abstract: Disclosed are embodiments of an on-chip polarizer and of methods of forming the polarizer. The polarizer includes first and second waveguides with different shapes at different design levels above a substrate. The first waveguide has a main body between an input end and an output end. The second waveguide is spiral in shape with an inner end and with an outer end that is evanescently coupled to the main body of the first waveguide. Light signals, including first light signals with a first type polarization and second light signals with a second type polarity, are received at the input end of the first waveguide. The first waveguide passes the first light signals to the output end and passes at least some second light signals out the main body and into the outer end of the second waveguide. The second waveguide attenuates the received second light signals.

Abstract: One optical antenna coupler includes a base body having a first waveguide and a second waveguide and a plurality of antenna coupler elements positioned above an upper surface of the base body that are adapted to be irradiated by an incident light. The plurality of antenna coupler elements includes at least one variable optical characteristics (VOC) antenna coupler element that comprises a VOC material, wherein the at least one VOC antenna coupler element is operatively coupled to a first energy source. The VOC antenna coupler element is adapted to be transitioned from a metallic state to an insulator state and vice versa. In the metallic state, substantially all of the incident light is directed out of the optical antenna coupler via the first waveguide and, in the insulator state, substantially all of the incident light is directed out of the optical antenna coupler via the second waveguide.

Abstract: One illustrative optical device disclosed herein includes a base layer comprising a semiconductor material and a photodetector-coupler that comprises a detector-coupler element. The device also includes a first diode structure that is positioned in the detector-coupler element and a second diode structure that is positioned in the base layer, wherein the second diode structure is positioned vertically below at least a portion of detector-coupler element.

Abstract: One illustrative device disclosed herein includes a lower waveguide structure and an upper body structure positioned above at least a portion of the lower waveguide structure. In this example, the device also includes a grating structure positioned in the upper body structure, wherein the grating structure comprises a plurality of grating elements that comprise a tunable material whose index of refraction may be changed by application of energy to the tunable material.

Abstract: One illustrative device disclosed herein includes a layer of semiconductor material and a first Bragg reflector structure positioned in the layer of semiconductor material, wherein the first Bragg reflector structure comprises a plurality of dielectric elements and a first internal area defined by an innermost of the first plurality of dielectric elements. In this example, the device also includes an optical component positioned above the layer of semiconductor material, wherein at least a portion of the optical component is positioned within a vertical projection of the first internal area.

Abstract: Structures for a polarizer and methods of fabricating a structure for a polarizer. A first waveguide core has a first tapered section, a second tapered section, and a section positioned along a longitudinal axis between the first tapered section and the second tapered section. The first tapered section and the second tapered section each narrow in a direction along the longitudinal axis toward the section. A second waveguide core has a first terminating end, a second terminating end, and a section that is arranged between the first and second terminating ends. The section of the second waveguide core is positioned either over or below the section of the first waveguide core.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiode structures and methods of manufacture. The structure includes: a charge region having a first doping concentration and a variable width; a multiplication region adjacent to the charge region; and an absorption region adjacent to the variable width charge region.

Abstract: Structures for a polarization switch and methods of fabricating a structure for a polarization switch. A waveguide core is located on a substrate. The waveguide core is composed of silicon nitride. An active layer is positioned proximate to a section of the waveguide core. The active layer composed of a phase change material having a first state with a first refractive index and a second state with a second refractive index.

Abstract: The present disclosure generally relates to structures for use in optoelectronic/photonic applications and integrated circuit (IC) chips. The present disclosure also relates to semiconductor devices having a photodetector coupled with a waveguide, more particularly, a photodetector with a butt-end coupled waveguide. The present disclosure provides a structure having a substrate, a photodetector arranged above the substrate, the photodetector having a core body and a coupler that is adjacent to the core body, in which the core body is configured to absorb light received by the coupler, and the coupler including a plurality of grating structures having respective widths that vary as a function of position relative to the core body.

Abstract: Disclosed is a cell that integrates a pixel and a two-terminal non-volatile memory device. The cell can be selectively operated in write, read and functional computing modes. In the write mode, a first data value is stored the memory device. In the read mode, it is read from the memory device. In the functional computing mode, the pixel captures a second data value and a sensed change in an electrical parameter (e.g., voltage or current) on a bitline connected to the cell is a function of both the first and second data value. Also disclosed is an IC structure that includes an array of the cells and, when multiple cells in a given column are concurrently operated in the functional computing mode, the sensed total change in the electrical parameter on the bitline for the column is indicative of a result of a dot product computation.

Abstract: A driver circuit includes digital inputs, such as a first digital input and a second digital input. The digital inputs receive voltages at either a digital high-voltage or a digital low-voltage. The driver circuit has a clock input, an analog output, a first differential pair of transistors connected to the analog output, second differential pairs of transistors connected to the analog output, and voltage limiters connected to the clock input and the second differential pairs of transistors. The voltage limiters supply different voltages to the second differential pairs of transistors, which results in the second differential pairs of transistors providing analog signals to the analog output that are at different voltage steps at, and between, the digital high-voltage and the digital low-voltage.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide absorbers and methods of manufacture. A structure includes: a photonics component; and a vanadate waveguide absorber adjacent to the photonics component.

Abstract: Structures including an optical phased array and methods of fabricating such structures. A first optical phased array includes a first plurality of antennas. A plurality of phase shifters are respectively coupled to the first plurality of antennas. A second optical phased array includes a second plurality of antennas, and a third optical phased array includes a third plurality of antennas. The second optical phased array is located in a first direction relative to the first optical phased array. The third optical phased array is located in a second direction relative to the first optical phased array. The second direction is different from the first direction.

Abstract: One illustrative laser disclosed herein includes a gain medium layer having a first width in a transverse direction that is orthogonal to a laser emitting direction of the laser, and an upper light-confining structure positioned above an upper surface of the gain medium layer, wherein the upper light-confining structure has a second width in the transverse direction that is equal to or less than the first width and comprises at least one material having an index of refraction that is at least 2.0. The laser also includes a lower light-confining structure positioned below a lower surface of the gain medium layer, wherein the lower light-confining structure has a third width in the transverse direction that is equal to or less than the first width and comprises at least one material having an index of refraction that is at least 2.0.

Abstract: The present disclosure relates to a structure including a non-fixed read-cell circuit configured to switch from a first state to a second state based on a state of a memory cell to generate a sensing margin.

Abstract: Structures for a polarizer and methods of fabricating a structure for a polarizer. A first waveguide core has a first tapered section, a second tapered section, and a section positioned along a longitudinal axis between the first tapered section and the second tapered section. The first tapered section and the second tapered section each narrow in a direction along the longitudinal axis toward the section. A second waveguide core has a first terminating end, a second terminating end, and a section that is arranged between the first and second terminating ends. The section of the second waveguide core is positioned either over or below the section of the first waveguide core.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to Waveguide absorbers and methods of manufacture are provided. The waveguide structure includes a photonics component and a spirally configured waveguide absorber coupled to a node of the photonics component which reduces optical return loss.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide absorbers and methods of manufacture.