Patents by Inventor Ajoy Zutshi
Ajoy Zutshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230094483Abstract: A chemical mechanical planarization (CMP) pad conditioner assembly includes a backing plate including at least one polymer and at least one additive. The at least one additive is present in an amount sufficient to result in a backing plate having at least one of a magnetic property, a color property, a structural property, or any combination thereof. The CMP pad conditioner assembly includes a plurality of segments including a ceramic substrate and a plurality of laser textured protrusions integral with the ceramic substrate. The plurality of laser textured protrusions is coated with a conformal diamond layer.Type: ApplicationFiled: September 23, 2022Publication date: March 30, 2023Inventors: Doruk YENER, Joseph SOUSA, Elango Balu, Laundy Oeur, Ajoy ZUTSHI
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Patent number: 9200180Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).Type: GrantFiled: April 7, 2009Date of Patent: December 1, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Gautam Banerjee, Timothy Frederick Compton, Junaid Ahmed Siddiqui, Ajoy Zutshi
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Patent number: 7848839Abstract: A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.Type: GrantFiled: December 21, 2007Date of Patent: December 7, 2010Assignee: Applied Materials, Inc.Inventors: Ajoy Zutshi, Rahul Surana, Girish Dixit
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Patent number: 7678702Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).Type: GrantFiled: August 24, 2006Date of Patent: March 16, 2010Assignee: Air Products and Chemicals, Inc.Inventors: Timothy Frederick Compton, Junaid Ahmed Siddiqui, Ajoy Zutshi
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Publication number: 20090261291Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).Type: ApplicationFiled: April 7, 2009Publication date: October 22, 2009Inventors: Gautam Banerjee, Timothy Frederick Compton, Junaid Ahmed Siddiqui, Ajoy Zutshi
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Patent number: 7514363Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).Type: GrantFiled: August 29, 2005Date of Patent: April 7, 2009Assignee: DuPont Air Products NanoMaterials LLCInventors: Gautam Banerjee, Timothy Frederick Compton, Junaid Ahmed Siddiqui, Ajoy Zutshi
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Publication number: 20090061630Abstract: A method using an associated composition for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) is described. This method affords low dishing and local erosion levels on the metal during CMP processing of the metal-containing substrate.Type: ApplicationFiled: August 21, 2008Publication date: March 5, 2009Applicant: DuPont Air Products Nanomaterials LLCInventors: Bentley J. Palmer, Ann Marie Meyers, Suresh Shrauti, Guangying Zhang, Ajoy Zutshi
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Publication number: 20080109104Abstract: A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.Type: ApplicationFiled: December 21, 2007Publication date: May 8, 2008Inventors: Ajoy Zutshi, Rahul Surana, Girish Dixit
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Patent number: 7354332Abstract: A technique of the present invention utilizes qualification characteristics from a single wafer for qualifying a semiconductor manufacturing tool. Generally speaking, the technique commences with the processing of a wafer by the manufacturing tool. During processing, one or more qualification characteristics required to properly qualify the tool are measured using an in situ sensor or metrology device. Subsequently, the manufacturing tool is qualified by adjusting one or more parameters of a recipe in accordance with the qualification characteristics measured from the wafer to target one or more manufacturing tool specifications. In some embodiments, the tool to be qualified includes a bulk removal polishing platen, a copper clearing platen and a barrier removal polishing platen.Type: GrantFiled: March 26, 2004Date of Patent: April 8, 2008Assignee: Applied Materials, Inc.Inventors: Rahul Surana, Ajoy Zutshi
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Publication number: 20070054495Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).Type: ApplicationFiled: August 24, 2006Publication date: March 8, 2007Inventors: Timothy Compton, Junaid Siddiqui, Ajoy Zutshi
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Publication number: 20060079007Abstract: A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.Type: ApplicationFiled: October 8, 2004Publication date: April 13, 2006Applicant: Applied Materials, Inc.Inventors: Ajoy Zutshi, Rahul Surana, Girish Dixit
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Publication number: 20060046490Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).Type: ApplicationFiled: August 29, 2005Publication date: March 2, 2006Inventors: Gautam Banerjee, Timothy Compton, Junaid Siddiqui, Ajoy Zutshi
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Publication number: 20050032459Abstract: A technique of the present invention utilizes qualification characteristics from a single wafer for qualifying a semiconductor manufacturing tool. Generally speaking, the technique commences with the processing of a wafer by the manufacturing tool. During processing, one or more qualification characteristics required to properly qualify the tool are measured using an in situ sensor or metrology device. Subsequently, the manufacturing tool is qualified by adjusting one or more parameters of a recipe in accordance with the qualification characteristics measured from the wafer to target one or more manufacturing tool specifications. In some embodiments, the tool to be qualified includes a bulk removal polishing platen, a copper clearing platen and a barrier removal polishing platen.Type: ApplicationFiled: March 26, 2004Publication date: February 10, 2005Applicant: Applied Materials, Inc.Inventors: Rahul Surana, Ajoy Zutshi
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Patent number: 6620027Abstract: Methods and apparatus for planarizing a substrate surface having copper containing materials thereon is provided. In one aspect, the invention provides a system for processing substrates comprising a first platen adapted for polishing a substrate with a hard polishing pad disposed on the first platen, a second platen adapted for polishing a substrate with a hard polishing pad disposed on the second platen, and a third platen adapted for polishing a substrate with a hard polishing pad disposed on the third platen. In another aspect, the invention provides a method for planarizing a substrate surface by the system described above including substantially removing bulk copper containing materials on the first platen, removing residual copper containing materials on the second platen, and then removing a barrier layer on the third platen. A computer readable program may also be provided for performing the methods described herein.Type: GrantFiled: January 9, 2002Date of Patent: September 16, 2003Assignee: Applied Materials Inc.Inventors: Ajoy Zutshi, Rajeev Bajaj, Fred C. Redeker, Yutao Ma, Kapila Wijekoon
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Publication number: 20020090886Abstract: Methods and apparatus for planarizing a substrate surface having copper containing materials thereon is provided. In one aspect, the invention provides a system for processing substrates comprising a first platen adapted for polishing a substrate with a hard polishing pad disposed on the first platen, a second platen adapted for polishing a substrate with a hard polishing pad disposed on the second platen, and a third platen adapted for polishing a substrate with a hard polishing pad disposed on the third platen. In another aspect, the invention provides a method for planarizing a substrate surface by the system described above including substantially removing bulk copper containing materials on the first platen, removing residual copper containing materials on the second platen, and then removing a barrier layer on the third platen. A computer readable program may also be provided for performing the methods described herein.Type: ApplicationFiled: January 9, 2002Publication date: July 11, 2002Applicant: Applied Materials, Inc.Inventors: Ajoy Zutshi, Rajeev Bajaj, Fred C. Redeker, Yutao Ma, Kapila Wijekoon
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Patent number: 6261158Abstract: A multi-step CMP system is used to polish a wafer to form metal interconnects in a dielectric layer upon which barrier and metal layers have been formed. A first polish removes an upper portion of the metal layer using a first slurry and a first set of polishing parameters, leaving residual metal within the dielectric layer to serve as the metal interconnects. A second polish of the wafer on the same platen and polishing pad removes portions of the barrier layer using a second slurry under a second set of polishing parameters. The second polish clears the barrier layer from the upper surface of the dielectric layer, thereby forming the metal interconnect. To reduce dishing and dielectric erosion, the second slurry is selected so that the barrier layer is removed at a faster rate than the residual metal within the dielectric layer. A cleaning step may be optionally performed between the first and second polishes.Type: GrantFiled: December 16, 1998Date of Patent: July 17, 2001Assignee: SpeedFam-IPECInventors: Karey Holland, Ajoy Zutshi, Fen Dai, Yehiel Gotkis, C. Jerry Yang, Dennis Schey, Fred Mitchel, Lin Yang
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Patent number: 5604164Abstract: A refractory boat formed from an intermetallic composite comprising titanium diboride and boron nitride or titanium diboride, boron nitride and aluminum nitride and further including a metal selected from molybdenum, tungsten, tantalum and niobium and an oxide of CaO or Y.sub.2 O.sub.3 with the minimum concentration of oxide of from 0.7 wt % and with a maximum combined concentration of metal and oxide not exceeding 20 wt %. The invention is also directed to a method for forming a hot pressed refractory boat of an intermetallic composite composition as indicated above which is hot pressed at about 1900.degree. C.Type: GrantFiled: September 6, 1995Date of Patent: February 18, 1997Assignee: Advanced Ceramics CorporationInventors: Lionel C. Montgomery, Ajoy Zutshi