Patents by Inventor Akemi Takenouchi

Akemi Takenouchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6525261
    Abstract: An electronic device, such as a solar cell, having improved moisture, heat, and wear resistance, formed by applying an insulating film over the surfaces of the electronic device utilizing a screen printing process and curing the film with heat.
    Type: Grant
    Filed: March 14, 2000
    Date of Patent: February 25, 2003
    Assignees: Semiconductor Energy Laboratory Co., Ltd., TDK Corporation
    Inventors: Yuichi Kubota, Yukihiro Isobe, Akemi Takenouchi, Makoto Hosokawa
  • Patent number: 5891264
    Abstract: An aluminum film is formed as a photoreflective electrode in the side opposite to the light incident side of a solar cell by sputtering at a substrate temperature of 50.degree. to 200.degree. C. using a target, aluminum containing silicon as an impurity element at 0.1 to 6.0 weight %. An aluminum film or a silver film into which an impurity element is not added is formed on the above aluminum film, to obtain a texture structure having convex and concave shapes. When an organic resin film substrate is used, components (released as a gas by heating and a vacuum atmosphere) such as water within the organic resin film is removed after the aluminum film is formed.
    Type: Grant
    Filed: October 23, 1997
    Date of Patent: April 6, 1999
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisato Shinohara, Hisao Morooka, Izumi Ikeo, Akemi Takenouchi, Setsuo Nakajima, Yasuyuki Arai
  • Patent number: 5711824
    Abstract: An aluminum film is formed as a photoreflective electrode at the side opposite to the light incident side of a solar cell by sputtering at a substrate temperature of 50.degree. to 200.degree. C. using a target of aluminum containing silicon as an impurity element at 0.1 to 6.0 weight %. An aluminum film or a silver film in which an impurity element is not added is formed on the above aluminum film, to obtain a texture structure having convex and concave shapes. When an organic resin film substrate is used, components (released as a gas by heating in a vacuum atmosphere) such as water within the organic resin film are removed after the aluminum film is formed.
    Type: Grant
    Filed: December 27, 1995
    Date of Patent: January 27, 1998
    Assignees: Semiconductor Energy Laboratory Co., Ltd., TDK Corporation
    Inventors: Hisato Shinohara, Hisao Morooka, Izumi Ikeo, Akemi Takenouchi, Setsuo Nakajima, Yasuyuki Arai
  • Patent number: 5637156
    Abstract: A resin composition for forming an insulating film suitable for fabricating an amorphous silicon solar cell utilizing a flexible substrate, obtained by mixing a first component comprising a polyfunctional isocyanate compound and a polyol based second component comprising polymers or oligomers having reactive hydroxyl groups which react with isocyanate groups to principally form urethane bonds.
    Type: Grant
    Filed: September 18, 1995
    Date of Patent: June 10, 1997
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuichi Kubota, Yukihiro Isobe, Akemi Takenouchi, Makoto Hosokawa
  • Patent number: 5627404
    Abstract: A semiconductor device using an organic resin substrate, wherein an organic resin coating is provided on the surface of said organic resin substrate and a method for forming the same.
    Type: Grant
    Filed: February 13, 1995
    Date of Patent: May 6, 1997
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akemi Takenouchi, Makoto Hosokawa, Yasuyuki Arai, Setsuo Nakajima
  • Patent number: 5427961
    Abstract: A semiconductor device using an organic resin substrate, wherein an organic resin coating is provided on the surface of said organic resin substrate and a method for forming the same.
    Type: Grant
    Filed: February 19, 1993
    Date of Patent: June 27, 1995
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akemi Takenouchi, Makoto Hosokawa, Yasuyuki Arai, Setsuo Nakajima