Abstract: The present invention provides a liquid dispersion capable of stably maintaining the dispersed state for a long time and suitably applicable to both O/W type cosmetic products and W/O type cosmetic products. The present invention also provides a cosmetic raw material containing the liquid dispersion and a cosmetic product containing the liquid dispersion. The present invention provides a liquid dispersion containing a polyol (A); a nonionic surfactant (B); and a hydrophobized inorganic powder (C), wherein the water content in 100% by mass of the liquid dispersion is 1% by mass or less.

Abstract: The present invention provides a liquid dispersion capable of stably maintaining the dispersed state for a long time and suitably applicable to both O/W type cosmetic products and W/O type cosmetic products. The present invention also provides a cosmetic raw material containing the liquid dispersion and a cosmetic product containing the liquid dispersion. The present invention provides a liquid dispersion containing a polyol (A); a nonionic surfactant (B); and a hydrophobized inorganic powder (C), wherein the water content in 100% by mass of the liquid dispersion is 1% by mass or less.

Abstract: It is one of the objects of the present disclosure to provide a water-based dispersion prepare a stable O/W product having an ultralight shielding effect, and to provide a cosmetic having a good feeling and a strong water repellency for sweat and water, by blending the water-based dispersion to a cosmetic. A water-based dispersion which contains an inorganic powder microfine particle subjected to a hydrophobic organic surface treatment, a polyhydric alcohol, water, and a nonionic surfactant, wherein the nonionic surfactant is a compound which can be dissolved transparently or slightly muddy in 1,3-butylene glycol (20 wt % concentration, 35° C.), and an amount of the inorganic powder microfine particle is 30 wt % or more.

Abstract: A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Abstract: A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Abstract: A method of manufacturing a semiconductor device includes: a groove portion formation step of forming a groove portion in a base; a barrier layer formation step of forming a barrier layer that covers at least an inner wall surface of the groove portion; a seed layer formation step of forming a seed layer that covers the barrier layer; and a burial step of burying a conductive material in an inside region of the seed layer, wherein the seed layer is made of Cu, and the conductive material is made of Cu.

Abstract: There is provided an inexpensive sputtering apparatus in which self-sputtering can be stably performed by accelerating the ionization of the atoms scattered from a target. The sputtering apparatus has: a target which is disposed inside a vacuum chamber so as to lie opposite to the substrate W to be processed; a magnet assembly which forms a magnetic field in front of the sputtering surface of the target; and a DC power supply which charges the target with a negative DC potential. A first coil is disposed in a central portion of a rear surface of the sputtering surface of the target. The first coil is electrically connected between the first power supply and the output to the target. When a negative potential is charged to the target by the sputtering power supply, the electric power is charged to the first coil, whereby a magnetic field is generated in front of the sputtering surface.

Abstract: There is provided an inexpensive sputtering apparatus in which self-sputtering can be stably performed by accelerating the ionization of the atoms scattered from a target. The sputtering apparatus has: a target which is disposed inside a vacuum chamber so as to lie opposite to the substrate W to be processed; a magnet assembly which forms a magnetic field in front of the sputtering surface of the target; and a DC power supply which charges the target with a negative DC potential. A first coil is disposed in a central portion of a rear surface of the sputtering surface of the target. The first coil is electrically connected between the first power supply and the output to the target. When a negative potential is charged to the target by the sputtering power supply, the electric power is charged to the first coil, whereby a magnetic field is generated in front of the sputtering surface.