Abstract: A vibration monitoring device includes: a rotation sensor for outputting a rotation signal synchronized with rotation of a rotational shaft; an output device for outputting a filter command value corresponding to a rotation speed of the rotational shaft calculated from the rotation signal; and at least one filter for extracting, in response to input of the rotation signal and the filter command value, a signal in a passband set according to the filter command value from the rotation signal as a vibration signal from which vibration information of the rotational shaft can be obtained.

Abstract: In a display apparatus, a first data control circuit, a second data control circuit, a first selection control circuit and a second selection control circuit, all disposed in the periphery of a display region, and a power supply region are formed in a manner such that at least part of the first data control circuit, second data control circuit, first selection control circuit and second selection control circuit is overlapped with the power supply region. The power supply region and a cathode region are provided over a large area in a layer or layers different from the above-mentioned circuits disposed in the periphery of the display region.

Abstract: In a state where a selection TFT is off, a control TFT is turned off and a reset control TFT and a short-circuit TFT are turned on. This results in the selection TFT side of a capacitor to be set to PVDD so that the short-circuit TFT turns on and a drive TFT is connected to a diode. Then, a voltage lower then PVDD by a threshold voltage of the drive TFT is set to the gate of the drive TFT. Next, the reset control TFT and the short-circuit TFT are turned off so that the control TFT is turned on. The gate voltage of the drive TFT is shifted by the voltage of a video signal on a data line DL so that the drive TFT turns on and a driving current is supplied to an organic EL device. As a result, the driving current can be controlled, independently of the threshold voltage of the drive TFT, in accordance with the video signal.

Abstract: Semiconductor film forming positions are positions where positioned are a plurality of same conductive-type transistors that control luminance of optical elements in a drive circuit of each pixel. The semiconductor film forming positions in a semiconductor film forming process are arranged in such positions that they receive heat treatment of the same level of intensities in an intensity distribution. The semiconductor film forming positions are arranged in the same shot region in a heat treatment such as excimer laser annealing, and is arranged within a range corresponding to superposition width in a superimposed irradiation. Thereby, the uniformity of characteristics is achieved for the plurality of transistors formed in the semiconductor film forming positions.

Abstract: In a display apparatus, a first data control circuit, a second data control circuit, a first selection control circuit and a second selection control circuit, all disposed in the periphery of a display region, and a power supply region are formed in a manner such that at least part of the first data control circuit, second data control circuit, first selection control circuit and second selection control circuit is overlapped with the power supply region. The power supply region and a cathode region are provided over a large area in a layer or layers different from the above-mentioned circuits disposed in the periphery of the display region.

Abstract: A method of fabricating a semiconductor device includes the steps of forming an amorphous semiconductor film on a substrate, oxidizing the surface of the amorphous semiconductor film in an atmosphere containing water vapor and oxygen, and removing an oxide film which is formed on the surface of the semiconductor film.

Abstract: A method of fabricating a semiconductor device includes the steps of forming an amorphous semiconductor film on a substrate, oxidizing the surface of the amorphous semiconductor film in an atmosphere containing water vapor and oxygen, and removing the oxide film which is formed on the surface of the semiconductor film.