Abstract: A reticle inspection apparatus for detecting defects on a reticle 16 includes an image data generator 42 for generating image data of the reticle 16, a definition analyzer 44 for analyzing definition of image from the image data, a definition judge device 45 for judging whether or not the definition of image is within a predetermined reference range and a sensor position regulating stage 34 for correcting a position of a position sensor 33 when the definition of image is out of the reference range. The reticle inspection apparatus constructed as mentioned is reliable and capable of automatically diagnosing an error of an auto-focusing function of the reticle inspection apparatus due to deformation, etc., of the reticle inspection apparatus.

Abstract: To provide an ArF excimer laser device capable of a pulsewidth FWHM of 20 ns or more, a pulse duration time of 50 ns or more, and a spectrum line width FWHM of 0.35 pm or less, and to provide a KrF excimer laser device and a fluorine laser device with stretched pulse widths. The ArF excimer laser device connects to the output terminal of a magnetic pulse compression circuit and has a pair of laser discharge electrodes located within the laser chamber and a peaking capacitor connected in parallel with the pair of laser discharge electrodes. The output waveform of the laser pulse has a bifurcated form with a front half peak and a later half peak and, if the peak value of the front half peak is P1 and the peak value of the later half peak is P2 and the (proportion of the pulse later half peak)=P2/(P1+P2)×100(%), then the (proportion of the pulse later half peak) is 50% or more.

Abstract: An excimer laser apparatus using a bandwidth-narrowing optical system including a beam diameter-enlarging optical system and a Littrow mounting reflection type diffraction grating is made suitable for use as a laser light source for semiconductor lithography or the like by surmounting the limit to bandwidth narrowing due to wavefront distortion induced by the reflection type diffraction grating. In an excimer laser apparatus having a bandwidth-narrowing optical system including a Littrow mounting reflection type diffraction grating and a combination of a beam diameter-enlarging optical system and a slit placed on the entrance side of the reflection type diffraction grating, diffracted wavefront distortion (a measured value for He—Ne laser light) within the laser irradiation area of the reflection type diffraction grating in Littrow mounting is not more than &lgr;/10, where &lgr; is a measuring wavelength.

Abstract: The invention relates to a semiconductor exposure ArF excimer laser device having a narrow line width containing 95% of the energy of 1.15 pm or less while using an optical system of prior art beam expansion prisms and a diffraction grating. The ArF excimer laser device for narrowing the bandwidth has a line-narrowing optical system formed of an echelle diffraction grating (3) in a Littrow arrangement, a beam expansion prism system composed of at least three prisms arranged on the incident side of the echelle diffraction grating, and slits 4. The blaze angle (&thgr;) of the diffraction grating 3 is 82° or less, the magnification rate M of the beam expansion prism system is 26 times or less, the oscillation pulse width Tis is 60 ns or less, the length L of the resonator is in a range of 1000 to 1350 mm and the slit width W is 1.0 mm or more, satisfying relation (W+11) cos &thgr;/(LMTis0.853)<4.94×10−6.

Abstract: A reticle inspection apparatus for detecting defects on a reticle 16 includes an image data generator 42 for generating image data of the reticle 16, a definition analyzer 44 for analyzing definition of image from the image data, a definition judge device 45 for judging whether or not the definition of image is within a predetermined reference range and a sensor position regulating stage 34 for correcting a position of a position sensor 33 when the definition of image is out of the reference range. The reticle inspection apparatus constructed as mentioned is reliable and capable of automatically diagnosing an error of an auto-focusing function of the reticle inspection apparatus due to deformation, etc., of the reticle inspection apparatus.

Abstract: A compact and high-performance spectroscope capable of providing a resolution of 0.1 pm or less as in the case of a large-sized spectroscope with an increased focal length and suitable for measuring the spectral distribution of an excimer laser beam. A collimating optical system collimates light under measurement passing through an entrance slit. The collimated light is incident on a diffraction grating and diffracted at angles differing depending on wavelengths. An imaging optical system focuses a beam of light diffracted by the diffraction grating. An exit slit or a light distribution detector is placed in a focal plane of the imaging optical system. A beam diameter-expanding optical system is placed at least between the collimating optical system and the diffraction grating to expand the diameter of the beam of light collimated by the collimating optical system at least in the direction of dispersion of the diffraction grating.

Abstract: To provide an ArF excimer laser device capable of a pulsewidth FWHM of 20 ns or more, a pulse duration time of 50 ns or more, and a spectrum line width FWHM of 0.35 pm or less, and to provide a KrF excimer laser device and a fluorine laser device with stretched pulse widths. The ArF excimer laser device connects to the output terminal of a magnetic pulse compression circuit and has a pair of laser discharge electrodes located within the laser chamber and a peaking capacitor connected in parallel with the pair of laser discharge electrodes. The output waveform of the laser pulse has a bifurcated form with a front half peak and a later half peak and, if the peak value of the front half peak is P1 and the peak value of the later half peak is P2 and the (proportion of the pulse later half peak)=P2/(P1+P2)×100(%), then the (proportion of the pulse later half peak) is 50% or more.

Abstract: The invention relates to a semiconductor exposure ArF excimer laser device having a narrow line width containing 95% of the energy of 1.15 pm or less while using an optical system of prior art beam expansion prisms and a diffraction grating. The ArF excimer laser device for narrowing the bandwidth has a line-narrowing optical system formed of an echelle diffraction grating (3) in a Littrow arrangement, a beam expansion prism system composed of at least three prisms arranged on the incident side of the echelle diffraction grating, and slits 4. The blaze angle (&thgr;) of the diffraction grating 3 is 82° or less, the magnification rate M of the beam expansion prism system is 26 times or less, the oscillation pulse width T1S is 60 ns or less, the length L of the resonator is in a range of 1000 to 1350 mm and the slit width W is 1.

Abstract: The present invention provides a wavelength-stabilized narrow band excimer laser device which has a discharge tube, a cavity formed of both an output mirror at a front side and a total reflection mirror at a rear side, and a wavelength selective element positioned between the front and rear mirrors, wherein the output mirror, the total reflection mirror and the wavelength selective element are securely fixed on a supporting structure which is mounted via a vibration removing device over a mount on which the discharge tube is mounted so that the output mirror, the total reflection mirror and the wavelength selective element are free from any vibration of the discharge tube.