Abstract: A method of forming a silicon oxide layer comprising initiating formation of a silicon oxide layer on a surface of a silicon layer by an oxidation method using wet gas at an ambient temperature at which no silicon atom is eliminated from the surface of the silicon layer, and then, forming the silicon oxide layer up to a predetermined thickness by an oxidation method using wet gas.

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a nitrogen-containing oxide film on a substrate for use as a gate insulating film, annealing the gate insulating film in an atmosphere containing oxygen, annealing the gate insulating film in an oxygen-free, inert atmosphere, and forming an electrode film on the twice annealed gate insulating film. The method may further include the steps of forming a gate electrode by patterning of the electrode film, forming LDD, forming side wall insulating films and forming source/drain regions.

Abstract: An apparatus for forming a silicon oxide film which has a process chamber and is for thermally oxidizing a surface of a silicon layer by introducing water vapor into the process chamber, and which further has dew-formation prevention/evaporation means for preventing dew formation in the process chamber and/or evaporating dew in the process chamber.

Abstract: An apparatus for forming a silicon oxide film which has a process chamber and is for thermally oxidizing a surface of a silicon layer by introducing water vapor into the process chamber, and which further has dew-formation prevention/evaporation means for preventing dew formation in the process chamber and/or evaporating dew in the process chamber.

Abstract: A method of forming an oxide film comprising the steps of; (A) generating a water vapor atmosphere in a process chamber in a state where partitioning means is closed, and transferring a substrate into a substrate transfer portion, (B) opening the partitioning means after the transfer of the substrate into the substrate transfer portion is completed, and transferring the substrate into the process chamber having the water vapor atmosphere, (C) thermally oxidizing a semiconductor layer on the surface of the substrate in the process chamber having the water vapor atmosphere, to form an oxide film having a predetermined thickness on the surface of the semiconductor layer, and (D) changing the atmosphere in the process chamber into an inert gas atmosphere, then transferring the substrate out of the process chamber, closing the partitioning means and transferring the substrate out of the substrate transfer portion.

Abstract: An apparatus for forming a silicon oxide film which has a process chamber and is for thermally oxidizing a surface of a silicon layer by introducing water vapor into the process chamber, and which further has dew-formation prevention/evaporation means for preventing dew formation in the process chamber and/or evaporating dew in the process chamber.

Abstract: A process for forming a silicon oxide film comprising:(a) heat treating a semiconductor substrate at a temperature of 1,150.degree. C. or higher under a 100% hydrogen gas atmosphere for a period of 10 to 600 minutes; and(b) forming a silicon oxide film on the semiconductor substrate by wet oxidation, followed by heat treating said silicon oxide film under an inert gas atmosphere containing a halogen element.

Abstract: A process for forming a silicon oxide film comprising:(a) heat treating a semiconductor substrate at a temperature of 1,150.degree. C. or higher under a 100% hydrogen gas atmosphere for a period of 10 to 600 minutes; and(b) forming a silicon oxide film on the semiconductor substrate by wet oxidation, followed by heat treating said silicon oxide film under an inert gas atmosphere containing a halogen element.