Abstract: The object of the present invention is to suppress the increase of the contact resistance at the interface between the metal layer and the silicon plug in the wiring structure in which a metal layer is formed on and connected to a silicon plug. For its achievement, a lower semiconductor layer (drain) of a vertical-type MISFET is connected to an intermediate metal layer via an underlying plug composed of a polycrystalline silicon film, and a trap layer composed of a silicon nitride (TiN) film is formed on a part of the surface of the intermediate metal layer so as to surround the plug. The trap layer is formed in order to prevent an undesired high-resistance oxide layer from being formed at the interface between the plug and the intermediate metal layer.

Abstract: A developing paper having an image receiving dye layer containing a plasticizing agent on a substrate, the plasticizing agent including a solid plasticizing agent which is solid in the application temperature and a liquid plasticizing agent which is liquid in the application temperature. Since the developing paper contains a plasticizing agent including a liquid plasticizing agent and a solid plasticizing agent, the developing paper has an excellent light resistance. Moreover, since the plasticizing agent contains a liquid plasticizing agent and a solid plasticizing agent, there is no danger of precipitation of the plasticizing agent from the surface of the developing paper. Furthermore, the developing paper containing the aforementioned plasticizing agent enables to obtain a desirable plasticizing effect.

Abstract: An ink ribbon adapted to be used for a sublimation type thermal transfer printer, said ink ribbon comprises a ribbon-shaped substrate, ink layers formed on a surface of said substrate and containing dyes, sensor marks formed on said surface of said substrate and a back coat layer formed on the other surface of said substrate, said sensor marks containing first carbon black with an average particle diameter of 30 nm or less and second carbon black with an average particle diameter of 270 nm or more. Such an ink ribbon significantly improve the reliability of detecting sensor marks and the shelf life.

Abstract: A developing paper having an image receiving dye layer containing a plasticizing agent on a substrate, the plasticizing agent including a solid plasticizing agent which is solid in the application temperature and a liquid plasticizing agent which is liquid in the application temperature.

Abstract: A developing paper having an image receiving dye layer containing a plasticizing agent on a substrate, the plasticizing agent including a solid plasticizing agent which is solid in the application temperature and a liquid plasticizing agent which is liquid in the application temperature. Since the developing paper contains a plasticizing agent including a liquid plasticizing agent and a solid plasticizing agent, the developing paper has an excellent light resistance. Moreover, since the plasticizing agent contains a liquid plasticizing agent and a solid plasticizing agent, there is no danger of precipitation of the plasticizing agent from the surface of the developing paper. Furthermore, the developing paper containing the aforementioned plasticizing agent enables to obtain a desirable plasticizing effect.

Abstract: A semiconductor device, such as a dynamic RAM, and method of making it. A number of stacked cell capacitors are placed at a prescribed spacing in an alignment direction on top of a p.sup.- -type silicon substrate (1). Each capacitor has a nearly perpendicular cylindrical lower electrode (cylindrical polysilicon layer (96)), a dielectric film (silicon nitride film (77)), and upper electrode (plate electrode (78) made of polysilicon). The spacing in the alignment direction is smaller than the inner diameter of the lower electrode.

Abstract: There is disclosed a method and apparatus for polishing a surface of a magnetic recording medium in which a magnetic layer surface of a magnetic tape is brought into contact with a polishing tape which is wound on a contact roll and travelled, and the magnetic tape and the polishing tape are travelled in opposite directions to polish the magnetic layer surface of the magnetic tape. In this invention, in surface polishing, a curvature of the contact roll at a position where the magnetic tape is brought into contact with the polishing tape at first is set to be 0.1 to 10 mm. In order to set the curvature of the contact roll at the position where the magnetic tape is brought into contact with the polishing tape at first to be 0.1 to 10 mm, for example, the curvature of the contact roll is continuously changed.

Abstract: The amount of dust particles deposited on a semiconductor wafer during plasma etching or CVD in manufacturing a semiconductor integrated circuit is decreased by second plasma generating electrode 28 disposed around a lower electrode 15 in a plasma etching chamber 4a. High frequency voltage is applied to the second plasma generating electrode 18 just before the stop of plasma discharge to form a sub-plasma of high density along the outer periphery of the lower electrode 15, there is formed a sub-potential distribution acting to push out negatively charged dust particles stagnating near the main surface of a semiconductor substrate 7 toward the outer periphery of the wafer. The negatively charged dust particles thus pushed out from the vicinity of the main surface of the wafer 7 are moved to the second plasma generating electrode 28 and exhausted by a vacuum pump through an exhaust port 25.