Patents by Inventor Akihiko Mitsuda

Akihiko Mitsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma processing method
    Patent number: 6914207
    Abstract: In a plasma processing method which comprises supplying a processing gas to a vacuum vessel forming a plasma production part, producing a plasma using an antenna and a Faraday shield which are provided at outer periphery of the vacuum vessel and to which a high-frequency electric power can be applied, and carrying out the processing, a voltage of at least 500 V is applied to the Faraday shield and a sample which is disposed in the vacuum vessel and which is a nonvolatile material as a material to be etched is etched.
    Type: Grant
    Filed: October 21, 2003
    Date of Patent: July 5, 2005
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Tadayoshi Kawaguchi, Tadamitsu Kanekiyo, Akihiko Mitsuda, Takeshi Shimada, Saburou Kanai
  • Plasma processing method
    Publication number: 20040079733
    Abstract: In a plasma processing method which comprises supplying a processing gas to a vacuum vessel 2 forming a plasma production part, producing a plasma 6 using an antenna 1 and a Faraday shield 8 which are provided at outer periphery of the vacuum vessel and to which a high-frequency electric power can be applied, and carrying out the processing, a voltage of at least 500 V is applied to the Faraday shield 8 and a sample 12 which is disposed in the vacuum vessel 2 and which is a nonvolatile material as a material to be etched is etched.
    Type: Application
    Filed: October 21, 2003
    Publication date: April 29, 2004
    Inventors: Tadayoshi Kawaguchi, Tadamitsu Kanekiyo, Akihiko Mitsuda, Takeshi Shimada, Saburou Kanai
  • Plasma processing method and apparatus
    Publication number: 20030160024
    Abstract: In a plasma processing method which comprises supplying a processing gas to a vacuum vessel 2 forming a plasma production part, producing a plasma 6 using an antenna 1 and a Faraday shield 8 which are provided at outer periphery of the vacuum vessel and to which a high-frequency electric power can be applied, and carrying out the processing, a voltage of at least 500 V is applied to the Faraday shield 8 and a sample 12 which is disposed in the vacuum vessel 2 and which is a nonvolatile material as a material to be etched is etched.
    Type: Application
    Filed: February 27, 2002
    Publication date: August 28, 2003
    Inventors: Tadayashi Kawaguchi, Tadamitsu Kanekiyo, Akihiko Mitsuda, Takeshi Shimada, Saburou Kanai