Abstract: When manufacturing a silicon epitaxial wafer by forming a silicon epitaxial layer through vapor phase growth on a front surface of a semiconductor substrate W with a CVD oxide film formed on a rear surface thereof, there is used a susceptor (20) where a pocket (21) inside which the semiconductor substrate W is disposed is formed and at least one pore (22) which passes through the susceptor (20) to a rear surface thereof and is open even during the vapor phase growth is formed in a more central position than that of an outermost peripheral portion inside the pocket (21), and the semiconductor substrate W is disposed such that the CVD oxide film faces the at least one pore (22), thus forming the silicon epitaxial layer on the front surface of the semiconductor substrate W through the vapor phase growth.