Abstract: A film processing device using vaporized liquid source capable of confirming the flow control accuracy of flow control equipment such as a mass flow controller (15) controlling the flow of the liquid source without separating the flow control equipment from piping and disassembling the piping, comprising a bypass passage (41) for bypassing a part of a washing fluid feed passage (32) for feeding washing fluid to a liquid source feed passage (12) and a flowmeter such as an MFM (42), wherein the washing fluid is allowed to flow to the mass flow controller (15) through the MFM (42), and the flow of the washing fluid detected by the MFM (42) is compared with a target flow set in the mass flow controller (15) to check whether the mass flow controller (15) operates normally or not.

Abstract: A film processing device using vaporized liquid source capable of confirming the flow control accuracy of flow control equipment such as a mass flow controller (15) controlling the flow of the liquid source without separating the flow control equipment from piping and disassembling the piping, comprising a bypass passage (41) for bypassing a part of a washing fluid feed passage (32) for feeding washing fluid to a liquid source feed passage (12) and a flowmeter such as an MFM (42), wherein the washing fluid is allowed to flow to the mass flow controller (15) through the MFM (42), and the flow of the washing fluid detected by the MFM (42) is compared with a target flow set in the mass flow controller (15) to check whether the mass flow controller (15) operates normally or not.

Abstract: In an exhaust system for a processing apparatus wherein a processing gas is used to subject a semiconductor wafer W to be processed to a predetermined processing, a vacuum exhaust pathway 40 having a vacuum pump 42 is connected to the processing apparatus 20. A trap mechanism 52 for removing reaction products that flow into the vacuum exhaust pathway 40 is provided within the vacuum exhaust pathway 40, via disconnectable connection flanges 78 and 86 on the upstream side of the vacuum pump 42. An upstream-side inlet portion and an outlet portion of this trap mechanism 52 are provided with isolation valves 80 and 88 that can place the interior of the trap mechanism in a hermetically sealed state when necessary. A bypass pathway 54 is provided to allow a cleaning gas to bypass the trap mechanism 52 during the cleaning of the processing apparatus 20.

Abstract: Disclosed is an MOCVD system for forming a tantalum oxide film on a semiconductor wafer, while using pentoethoxytantalum as a liquid raw material. In the system, a raw material tank is connected to a vaporizing unit through an upstream main line with a flow control unit. The vaporizing unit is connected to the process chamber of a film-forming unit through a downstream main line. A partition wall is arranged to surround the entire system so as to isolate it from the other space in the clean room. The raw material tank, the flow control unit, and part of the upstream main line therebetween are accommodated in a constant temperature and heat insulating box all together and are kept at a temperature of from 25 to 35° C.

Abstract: A vertical heat treatment apparatus for semiconductor wafers (W) including a heat treating furnace (19) which is heated to 600.degree. C. or higher. In the heat treating furnace (19), the wafers (W) are subjected to batch treatment while they are placed on a boat (16). A preparatory vacuum chamber (102) is airtightly connected to a lower side of the heat treating furnace (19). Disposed in the preparatory vacuum chamber (102) are a horizontal transfer mechanism (201) and a vertical transfer mechanism (202) for transferring the boat (16). The two transfer mechanisms (201 and 202) are supported by support members (29a and 33a) mounted on a mechanical base (28). The preparatory vacuum chamber (102) and the support members (29a and 33a) are airtightly connected to each other by means of bellows.

Abstract: The vertical heat treatment apparatus for semiconductor wafers (W) includes a heat treatment furnace (19). In the heat treatment furnace (19), the wafers (W) are subjected to a batch treatment in a state mounted on a boat (16). To the lower side of the heat treatment furnace (19), a preparatory vacuum chamber (102) is airtightly connected through a manifold (33). The manifold (33) has first and second parts (33a and 33b) separably coupled to each other, which are connected to the heat treatment furnace (19) and the preparatory vacuum chamber (102), respectively. The second part (33b) defines a valve seat on which a lid (22) is seated to cut off the communication between the heat treatment furnace (19) and the preparatory vacuum chamber (102).

Abstract: In a reaction for introducing chloromethyl groups into an aromatic crosslinked copolymer by reacting chloromethyl methyl ether to the aromatic crosslinked copolymer in the presence of a chloromethylation reaction catalyst, a method for recovering chloromethyl methyl ether from the reaction mixture, which comprises the following steps 1) a step of adding to the reaction mixture an aqueous acid solution which is capable of dissolving the chloromethylation reaction catalyst without decomposing chloromethyl methyl ether, and an extraction solvent which is inert to and miscible with chloromethyl methyl ether and which is capable of swelling the chloromethylated aromatic crosslinked copolymer, 2) a step of contacting hydrogen chloride gas to the reaction mixture and the extract solution from the step 1 to convert decomposition products of chloromethyl methyl ether, to chloromethyl methyl ether, 3) a step of separating the resulting mixture from the step 2 into an extraction solvent layer containing chloromethyl met