Abstract: A photosensitive resin composition according to the present disclosure, contains an acid-modified vinyl group-containing resin (A), a thermosetting resin (B), a photopolymerization initiator (C), and a photopolymerizable compound (D), in which the photopolymerizable compound includes a photopolymerizable compound having a polyoxyalkylene chain and an ethylenically unsaturated group.

Abstract: [Object] To provide a flexible wiring substrate and an electronic apparatus that can easily provide the substrate with stretchability. [Solving Means] A flexible wiring substrate includes a plurality of non-stretching portions and stretching portions. The plurality of the non-stretching portions is spaced apart from each other. The stretching portions divide the plurality of the non-stretching portions, connect the adjacent non-stretching portions, and are stretched and contracted by formed slits to be capable of changing relative positions between the non-stretching portions.

Abstract: The problem of the invention is to provide a resin composite electrolytic copper foil having further improved heat resistance and improved plate adhesion strength when plated after desmear treatment in the work process of an additive method. The solution is to form a roughened surface having a plurality of minute projections, a surface roughness (Rz) within a range of 1.0 pm to 3.0 pm and a lightness value of not more than 30 on one surface of an electrolytic copper foil (A), and form a layer of a resin composition (B) containing a block copolymerized polyimide resin (a) having a structure that imide oligomers of a first structural unit and a second structural unit are bonded alternately and repeatedly on the roughened surface.

Abstract: The problem of the invention is to provide a resin composite electrolytic copper foil having further improved heat resistance and improved plate adhesion strength when plated after desmear treatment in the work process of an additive method. The solution is to form a roughened surface having a plurality of minute projections, a surface roughness (Rz) within a range of 1.0 ?m to 3.0 ?m and a lightness value of not more than 30 on one surface of an electrolytic copper foil (A), and form a layer of a resin composition (B) containing a block copolymerized polyimide resin (a) having a structure that imide oligomers of a first structural unit and a second structural unit are bonded alternately and repeatedly on the roughened surface.

Abstract: A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.

Abstract: A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.

Abstract: Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT.

Abstract: A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.

Abstract: In the condition where a nozzle for applying a coating liquid is disposed on the lower side of a substrate and a substrate surface controlled in wettability is faced down, the nozzle and the substrate are moved relative to each other, whereby the coating liquid is applied to a desired region of the substrate, and then the coating liquid is dried, to obtain a pattern included a dried coating layer.

Abstract: Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT.

Abstract: Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT.

Abstract: A method of manufacturing a transistor includes: forming a gate electrode; forming a laminated film of an organic insulating film and an organic semiconductor film with a gate insulating film therebetween, the laminated film being opposed to the gate electrode; and patterning the organic semiconductor film.

Abstract: A method for producing a semiconductor device includes the steps of forming an organic semiconductor layer on a substrate; forming a protective pattern on the organic semiconductor layer; and patterning the organic semiconductor layer by dissolving, in an organic solvent, or subliming the organic semiconductor layer using the protective pattern as a mask.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.

Abstract: There is provided a method of forming an organic thin film, capable of forming a single-crystal organic thin film easily and rapidly while controlling a thickness and a size. After an organic solution is supplied to one surface (a solution accumulating region wide in width, and a solution constricting region narrow in width and connected thereto) of a film-formation substrate supported by a support controllable in temperature, a movable body controllable in temperature independently of the support is moved along a surface of the support while being kept in contact with the organic solution. The temperature of the support is set at a temperature positioned between a solubility curve and a super-solubility curve concerning the organic solution, and the temperature of the movable body is set at a temperature positioned on a side higher in temperature than the solubility curve.

Abstract: A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.

Abstract: A base station device of the present invention includes a base-station main body connected to a network, and multiple antenna units connected in series to the base-station main body. The base-station main body multiplexes signals acquired from the network and outputs the multiplexed signals to an antenna unit. The antenna unit demultiplexes the multiplexed signals into a signal to be transmitted by the antenna unit and another signals to be transmitted by another antenna unit, and transmits the other signal to the other antenna unit. The antenna unit multiplexes a signal received by the antenna unit and a signal received by the other antenna unit, and outputs the multiplexed signals to the base-station main body. The base-station main body demultiplexes the multiplexed signals, and transmits the demultiplexed signals to the network. Each antenna unit includes a demultiplexer of a single-input and three-outputs and a multiplexer of three-inputs and a single-output.

Abstract: A method of forming a pattern and a method of producing an electronic element with which a fine and precise pattern is stably formed are provided.

Abstract: In the condition where a nozzle for applying a coating liquid is disposed on the lower side of a substrate and a substrate surface controlled in wettability is faced down, the nozzle and the substrate are moved relative to each other, whereby the coating liquid is applied to a desired region of the substrate, and then the coating liquid is dried, to obtain a pattern included a dried coating layer.

Abstract: A method of making a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.