Abstract: A projection type image display device includes a focus adjusting unit that adjusts a focal position of a projection lens. The projection lens includes a front side lens group and a rear side lens group which are displaceable toward the screen. The focus adjusting unit includes a back focus adjusting unit that adjusts a position of the rear side lens group and a peripheral adjusting unit that adjusts a position of the front side lens group, and the back focus adjusting unit and the peripheral adjusting unit independently adjust the position of the rear side lens group and the position of the front side lens group by individual driving of motors.

Abstract: An initial light control value calculation section calculates the backlight's initial light control value K0 according to brightness of an inputted image signal for each area. A black area measurement section measures a black area S by obtaining ratio of the number of pixels satisfying Y?Y0 (Y: brightness signal level, Y0: black level threshold) in the screen. A minimum light control value output section determines a minimum light control value Kmin based on comparison between the measured black area S and a black area threshold S0 and outputs a maximum value permissible for the light control value as the value Kmin when the black area S is the threshold value S0 or less. An LED control signal calculation section outputs a control signal to LED light sources based on a light control value K1 as the higher one of K0 and Kmin.

Abstract: A television device structured to automatically adjust the color temperature on the display screen in accordance with the viewing environment includes an external light detection unit or an optical sensor for detecting the illuminance and the tint of the ambient light, and an image quality control unit or a microcomputer for adjusting quality of the video image to be displayed on the display panel. The image quality control unit adjusts the color temperature of the video image to be displayed in accordance with the illuminance value and the tint value detected by the external light detection unit. The optical sensor includes an illuminance sensor for mainly detecting the visible light, and an infrared sensor for mainly detecting the infrared light. The illuminance value and the tint value are obtained based on the output values of those two sensors.

Abstract: An initial light control value calculation section calculates the backlight's initial light control value K0 according to brightness of an inputted image signal for each area. A black area measurement section measures a black area S by obtaining ratio of the number of pixels satisfying Y?Y0 (Y: brightness signal level, Y0: black level threshold) in the screen. A minimum light control value output section determines a minimum light control value Kmin based on comparison between the measured black area S and a black area threshold S0 and outputs a maximum value permissible for the light control value as the value Kmin when the black area S is the threshold value S0 or less. An LED control signal calculation section outputs a control signal to LED light sources based on a light control value K1 as the higher one of K0 and Kmin.

Abstract: A television device structured to automatically adjust the color temperature on the display screen in accordance with the viewing environment includes an external light detection unit or an optical sensor for detecting the illuminance and the tint of the ambient light, and an image quality control unit or a microcomputer for adjusting quality of the video image to be displayed on the display panel. The image quality control unit adjusts the color temperature of the video image to be displayed in accordance with the illuminance value and the tint value detected by the external light detection unit. The optical sensor includes an illuminance sensor for mainly detecting the visible light, and an infrared sensor for mainly detecting the infrared light. The illuminance value and the tint value are obtained based on the output values of those two sensors.

Abstract: A method for manufacturing a semiconductor element, comprises: (1) forming a first insulating layer for electric field relaxation that is thicker than a first gate insulating layer in a first channel region of a transistor of a first conductive type that is one of P-type and N-type polarity formed on a semiconductor silicon wafer to surround an edge of a first gate electrode in order to reduce an electric field concentrated to a region surrounding the edge of the first gate electrode because of a voltage applied to the first gate electrode and a first drain region of the transistor of the first conductive type, and forming a second insulating layer for electric field relaxation that is thicker than a second gate insulating layer in a second channel region of a transistor of a second conductive type to surround the edge of the first gate electrode in order to reduce an electric field concentrated to a region surrounding an edge of a second gate electrode because of a voltage applied to the second gate electrod

Abstract: A method for manufacturing a semiconductor element, comprises: (1) forming a first insulating layer for electric field relaxation that is thicker than a first gate insulating layer in a first channel region of a transistor of a first conductive type that is one of P-type and N-type polarity formed on a semiconductor silicon wafer to surround an edge of a first gate electrode in order to reduce an electric field concentrated to a region surrounding the edge of the first gate electrode because of a voltage applied to the first gate electrode and a first drain region of the transistor of the first conductive type, and forming a second insulating layer for electric field relaxation that is thicker than a second gate insulating layer in a second channel region of a transistor of a second conductive type to surround the edge of the first gate electrode in order to reduce an electric field concentrated to a region surrounding an edge of a second gate electrode because of a voltage applied to the second gate electrod