Abstract: A method includes forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas; then etching the etching target layer, removing the resist patterns, and measuring shapes of etched patterns at the plurality of areas by means of a scatterometory technique; and determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the light exposure amounts and focus values used in the sequential light exposure, the line widths of the resist patterns, and the line widths of the etched patterns.

Abstract: A method includes forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas; then etching the etching target layer, removing the resist patterns, and measuring shapes of etched patterns at the plurality of areas by means of a scatterometory technique; and determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the light exposure amounts and focus values used in the sequential light exposure, the line widths of the resist patterns, and the line widths of the etched patterns.

Abstract: A method includes forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas; then etching the etching target layer, removing the resist patterns, and measuring shapes of etched patterns at the plurality of areas by means of a scatterometory technique; and determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the light exposure amounts and focus values used in the sequential light exposure, the line widths of the resist patterns, and the line widths of the etched patterns.

Abstract: A method includes forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas; then etching the etching target layer, removing the resist patterns, and measuring shapes of etched patterns at the plurality of areas by means of a scatterometory technique; and determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the light exposure amounts and focus values used in the sequential light exposure, the line widths of the resist patterns, and the line widths of the etched patterns.

Abstract: An ion generator generates ions above a semiconductor wafer and the ions are directed towards a surface of a semiconductor wafer. The ions combine with static charges on the semiconductor wafer to thereby discharge the surface of the semiconductor wafer.

Abstract: An ion generator generates ions above a semiconductor wafer and the ions are directed towards a surface of a semiconductor wafer. The ions combine with static charges on the semiconductor wafer to thereby discharge the surface of the semiconductor wafer.

Abstract: In order to provide a mask and a method for manufacturing a semiconductor device that achieve consistency in the resist pattern dimensions, a main pattern 110 provided for the purpose of semiconductor element production and an additional pattern 120 provided for the purpose of exposure quantity adjustment are drawn at a reticle 100. At the reticle 100, the additional pattern 120 achieves a regularity almost identical to that of the main pattern 110. At the same time, the additional pattern 120 has a specific shift relative to the main pattern 110. By achieving an optimal degree of shift between the additional pattern and main pattern at the reticle 100, consistency in the resist pattern dimensions can be achieved without adversely affecting the process of element pattern formation.

Abstract: An ion generator generates ions above a semiconductor wafer and the ions are directed towards a surface of a semiconductor wafer. The ions combine with static charges on the semiconductor wafer to thereby discharge the surface of the semiconductor wafer.

Abstract: In order to provide a mask and a method for manufacturing a semiconductor device that achieve consistency in the resist pattern dimensions, a main pattern 110 provided for the purpose of semiconductor element production and an additional pattern 120 provided for the purpose of exposure quantity adjustment are drawn at a reticle 100. At the reticle 100, the additional pattern 120 achieves a regularity almost identical to that of the main pattern 110. At the same time, the additional pattern 120 has a specific shift relative to the main pattern 110. By achieving an optimal degree of shift between the additional pattern and main pattern at the reticle 100, consistency in the resist pattern dimensions can be achieved without adversely affecting the process of element pattern formation.

Abstract: A rotary cutter head for use with a rotating filament trimmer in which a reel for winding cords or filaments is held between a housing covering a lower portion thereof and a retainer or hub fixed on the driven rotating shaft of the trimmer unit and is rotatably disposed within the housing. Within the bore of the reel, an axially movable slider is normally biased toward the retainer by the elastic force of a spring so that meshing engagement occurs between a peripheral array of axially projecting tongues formed on one end of the slider and a plurality of radial teeth-like ribs formed on the inner side of the retainer and establishes a driving connection to rotate the reels.