Abstract: The present invention relates to a zinc oxide varistor as a characteristic element of an arrestor for protecting a transmission and distribution line and peripheral devices thereof from surge voltage created by lightning, and more particularly a highly reliable zinc oxide varistor excellent in the non-linearity with respect to voltage, the discharge withstand current rating properties, and the life characteristics under voltage, a method of preparing the same, and PbO type crystallized glass for coating oxide ceramics employed for a zinc oxide varistor, etc. A zinc oxide varistor of the present invention comprises a sintered body (1) and a high resistive side layer (3) consisting of crystallized glass with high crystallinity containing the prescribed amount of SiO.sub.2, MoO.sub.3, WO.sub.3, TiO.sub.2, NiO, etc.

Abstract: A method for producing a photo-voltaic infrared detector including growing a crystalline CdHgTe layer on a CdTe substrate by liquid phase epitaxy using a growth melt including tellurium as a solvent to which indium is added as a dopant impurity in a concentration of from 0.01 to 0.1 ppm; annealing the CdHgTe layer to produce a p-type CdHgTe layer including indium as an n-type background dopant impurity; forming an n-type region of a desired depth as a light receiving region at the surface of the p-type CdHgTe layer by implanting a dopant impurity producing n-type conductivity and annealing; and forming an n-side electrode on the n-type region and a p-side electrode a prescribed distance from the n-type region on the p-type CdHgTe layer.

Abstract: The present invention relates to a zinc oxide varistor as a characteristic element of an arrestor for protecting a transmission and distribution line and peripheral devices thereof from surge voltage created by lightning, and more particularly a highly reliable zinc oxide varistor excellent in the non-linearity with respect to voltage, the discharge withstand current rating properties, and the life characteristics under voltage, a method of preparing the same, and PbO type crystallized glass for coating oxide ceramics employed for a zinc oxide varistor, etc. A zinc oxide varistor of the present invention comprises a sintered body (1) and a high resistive side layer (3) consisting of crystallized glass with high crystallinity containing the prescribed amount of SiO.sub.2, MoO.sub.3, WO.sub.3, TiO.sub.2, NiO, etc.

Abstract: The present invention relates to a zinc oxide varistor as a characteristic element of an arrestor for protecting a transmission and distribution line and peripheral devices thereof from surge voltage created by lightning, and more particularly a highly reliable zinc oxide varistor excellent in the non-linearity with respect to voltage, the discharge withstand current rating properties, and the life characteristics under voltage, a method of preparing the same, and PbO type crystallized glass for coating oxide ceramics employed for a zinc oxide varistor, etc. A zinc oxide varistor of the present invention includes a sintered body (1) and a high resistive side layer (3) consisting of crystallized glass with high crystallinity containing the prescribed amount of SiO.sub.2, MoO.sub.3, WO.sub.3, TiO.sub.2, NiO, etc.

Abstract: A method for manufacturing semiconductor-type laminated ceramic capacitors with a grain boundary-insulated structure including the steps of calcinating starting material of mixed powder in air or in nitrogen atmosphere after grinding, mixing and drying the mixed powder; forming raw sheets; printing a pattern of inner electrode paste on the surface of the raw sheets; calcinating the laminated body in air; sintering the laminated raw sheets in reducing atmosphere or in nitrogen atmosphere after calcination; re-oxidizing in air after sintering; and covering the edges of sintered ceramic sheets with outer electrode paste and baking after re-oxidation, terminals of inner electrodes being exposed to the edges, wherein: the starting material of mixed powder comprises a material of the composition Sr.sub.(1-x) Ba.sub.x TiO.sub.3 containing excess Ti to make a final molecular ratio of Ti to Sr.sub.(1-x) Ba.sub.x in the range of 0.95.ltoreq. Sr.sub.(1-x)Ba.sub.x /Ti< 1.00 (where x is in the range of 0< x.ltoreq.

Abstract: A method of diffusing mercury into a crystalline compound semiconductor film including mercury includes forming an amalgam on a region of the semiconductor film into which mercury is to be diffused, forminq a protective film on the amalgam, and annealing, whereby mercury from the amalgam diffuses into the semiconductor film and the protective film prevents the mercury from escaping. Therefore, a complicated temperature profile is not required and the mercury diffusion is carried out without sealing the semiconductor film in a quartz tube. As a result, the instruments and materials used in the diffusion process are easily handled and the diffusion of mercury into a large-sized semiconductor film is possible.

Abstract: The present invention provides a semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure made of Sr.sub.(1-x) Ba.sub.x TiO.sub.3 as a main component, comprising the functions of a conventional capacitor which absorbs low voltage noises and high frequency noises, and a varistor when high voltage noises and electrostatic charges invade, wherein simultaneous sintering of the materials of ceramic capacitor together with the materials of inner electrodes was made possible in the manufacturing process. Besides a material to be made semiconductive is added to the main component of Sr.sub.(1-x) Ba.sub.x TiO.sub.3 with excess Ti, the materials of Mn-Si, which are converted to MnO.sub.2 and SiO.sub.2 in the sintering process, are also added to the main component.

Abstract: A laminated semiconductor ceramic capacitor with a grain boundary-insulated structure comprises a semiconductor ceramic block with a grain boundary-insulated structure, a plurality of Ni inner electrodes and outer electrodes, wherein the Ni inner electrodes are obtained from a paste containing a powder prepared by solubilizing at least one compound containing an atom selected from the group consisting of Li, Na and K into Ni or an Ni containing compound; the Ni inner electrodes are placed in a substantially parallel manner within the ceramic block to reach to the corresponding opposite edges of the ceramic block alternatively one by one; and the outer electrodes are electrically connected to the corresponding edges of the inner electrodes, respectively.

Abstract: A semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure made of SrTiO.sub.3 as the main component, comprising the functions of a conventional capacitor which absorbs low voltage noises and high frequency noises, and a varistor when high voltage noises and electrostatic charges invade, wherein simultaneous sintering of the materials of the ceramic capacitor together with the materials of inner electrodes has been made possible in the manufacturing process. A material to be made semiconducting is added to the main component of SrTiO.sub.3 with an excess in Ti, the materials of Mn--Si, which are converted to MnO.sub.2 and SiO.sub.2 in the sintering process are also added to the main component.

Abstract: It is a voltage-dependent non-linear resistance ceramic composition comprising SrTiO.sub.3 as host material, Dy.sub.2 O.sub.3 or Dy.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 and Nb.sub.2 O.sub.5 as accelerating agent for semiconductorization, thereby changing crystal to a low resistance, and changing crystal boundary to a high resistance.In case Dy.sub.2 O.sub.3 or Dy.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 are used as the accelerating agent for semiconductorization, one kind or more selected from the group consisting of Na, K, Ca, Cd, In, Ba, Pb, Ag, Ce, La, Sc, Y, Cs, Au, Mg, Zr, Sn, Sb, W, Bi, Ni, Fe, Ga, Pt, Tl, Al, Si, Be, Li, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf and Ru. Alternatively, in case Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 and Nb.sub.2 O.sub.

Abstract: This is a voltage-dependent non-linear resistance ceramic composition wherein resistance of crystal is decreased by containing SrTiO.sub.3 as host material, and Nb.sub.2 O.sub.5 and Ta.sub.2 O.sub.5 as semiconductorization accelerating agent, and further by adding as additive one kind or more oxide of element selected from the group consisting of MnO.sub.2, Ga, Pt, Tl, Si, Ti, Li, La, Cu, Y, Cs, Au, Mo, S, Be, Al, Na, K, Ca, Cd, In, Ba, Pb, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf, Ru, Mg, Zr, Sn, Sb and W, these additive is segregated at crystal granule boundaries, thereby making the crystal granule boundaries to high resistance.Accordingly, by the high resistance layer at the crystal boundaries the varistor characteristic is obtainable, and a capacitance characteristic is obtainable between the crystal granule-crystal granule boundary-crystal granule.

Abstract: There is provided a voltage-dependent resistor comprising a bulk consisting essentially of zinc oxide as the major part and as additives 0.01 to 10 mol % of Bi.sub.2 O.sub.3, CoO, MnO, TiO and NiO and electrodes on the bulk, said electrodes having been formed by baking a silver paste comprising silver powder and a glass frit on the bulk, said glass frit containing as its principal content 80 to 95% by weight of Bi.sub.2 O.sub.3 and correspondingly 20 to 5% by weight of SiO.sub.2, said glass frit also containing 1 to 5 parts by weight of B.sub.2 O.sub.3 for 100 parts of said principal content. The electrodes can also contain minor amounts of CoO, Sb.sub.2 O.sub.3, a mixture of Sb.sub.2 O.sub.3 with Ag.sub.2 O or MgO, or a mixture of CoO with MgO or Ag.sub.2 O.