Abstract: According to one embodiments, an impurity that is introduced into a gate electrode and includes phosphorus or arsenic, a carbon that is introduced into the gate electrode, and an impurity diffusion layer that is formed in a semiconductor substrate to be arranged on both sides of the gate electrode are included, in which a coverage of an active region in which the gate electrode and the impurity diffusion layer are formed is 50% or more and an area thereof is 0.02 mm2 or more.

Abstract: In a steam turbine-generator with means for determining a load demand signal in accordance with a load reference signal, means for determining the valve opening under each admission mode of full-arc and partial-arc in accordance with said load demand signal and means for adjusting the ratio between valve openings under the each admission mode in accordance with a load change the ratio of steam flow under each of the admission modes is controlled in accordance with a load change so as to minimize the thermal stresses and thereby reduce the turbine load changing time.

Abstract: Improvements in or relating to a reheating steam plant comprising a main steam line connecting a heater to a higher pressure turbine through regulating valves, and a reheated steam line connecting the higher pressure turbine to an intermediate pressure turbine through a reheater, a reheating stop valve and an intermediate stop valve. The improvements consist in the provision of a branch line branching off from the main steam line at a point disposed on the up-stream side of the regulating valves and connected to the reheated steam line at a point interposed between the intermediate stop valve and the intermediate pressure turbine, an adjusting valve mounted in the branching line, and a control for the adjusting valve. The adjusting valve is adapted to be opened when the turbine is under an overload so as to introduce to the intermediate pressure turbine a portion of the steam supplied from the heater.