Abstract: An etching method is performed using a plasma processing apparatus that includes a processing chamber equipped with a support stage that accommodates a substrate, a first annular member disposed around the substrate and at least a part of the first annular member is disposed in a space between a lower surface of an outer peripheral portion of the substrate and an upper surface of the support stage, and a second annular member disposed outside the first annular member. The etching method includes adjusting a dielectric constant in the space using the first annular member in accordance with consumption of the second annular member; and etching the substrate.

Abstract: An etching method is performed using a plasma processing apparatus that includes a processing chamber equipped with a support stage that accommodates a substrate, a first annular member disposed around the substrate and at least a part of the first annular member is disposed in a space between a lower surface of an outer peripheral portion of the substrate and an upper surface of the support stage, and a second annular member disposed outside the first annular member. The etching method includes adjusting a dielectric constant in the space using the first annular member in accordance with consumption of the second annular member; and etching the substrate.

Abstract: A plasma processing apparatus of processing a processing target object within a depressurized space is provided. The plasma processing apparatus includes a processing vessel that partitions a depressurizable space; a mounting table, provided within the processing vessel, having an electrostatic chuck which is for a focus ring and has three electrodes; a power supply configured to apply three AC voltages having different phases to the three electrodes, respectively, to adsorb a target object on the electrostatic chuck.

Abstract: A plasma processing apparatus and a plasma processing method are provided which can sufficiently suppress an abnormal discharge in a gas space. A plasma processing apparatus includes a high frequency power source connected between a processing chamber and a base stand; a gas storage unit provided within the base stand and configured to store a gas; a blocking mechanism configured to block a gas introducing port of the gas storage unit; and a connection unit configured to connect a space between a disposition position of a wafer and the base stand, to the gas storage unit.

Abstract: A plasma processing apparatus that plasmatizes a gas that is supplied to inside of a chamber by using high-frequency power used for generating a plasma and applies plasma processing to a substrate is provided. The plasma processing apparatus includes a stage in which a first electrode and a second electrode are formed separately, the second electrode being provided around the first electrode, the substrate being placed above the first electrode, a focus ring being provided above the second electrode; a first high-frequency power supply configured to apply to the first electrode first high-frequency power used for mainly drawing an ion in the plasma; and a second high-frequency power supply, provided independently from the first high-frequency power supply, configured to apply to the second electrode second high-frequency power used for mainly drawing an ion in the plasma.

Abstract: A plasma processing apparatus of processing a processing target object within a depressurized space is provided. The plasma processing apparatus includes a processing vessel that partitions a depressurizable space; a mounting table, provided within the processing vessel, having an electrostatic chuck which is for a focus ring and has three electrodes; a power supply configured to apply three AC voltages having different phases to the three electrodes, respectively, to adsorb a target object on the electrostatic chuck.

Abstract: A method of adsorbing a target object on a mounting table is provided. The mounting table is provided within a processing vessel that partitions a depressurizable space in a processing apparatus which processes a processing target object within the space. Further, the processing apparatus serves as a plasma processing apparatus. The method includes mounting the target object on an electrostatic chuck of the mounting table; and applying three AC voltages having different phases to three electrodes of the electrostatic chuck, respectively.

Abstract: A method of adsorbing a target object on a mounting table is provided. The mounting table is provided within a processing vessel that partitions a depressurizable space in a processing apparatus which processes a processing target object within the space. Further, the processing apparatus serves as a plasma processing apparatus. The method includes mounting the target object on an electrostatic chuck of the mounting table; and applying three AC voltages having different phases to three electrodes of the electrostatic chuck, respectively.

Abstract: A plasma processing apparatus and a plasma processing method are provided which can sufficiently suppress an abnormal discharge in a gas space. A plasma processing apparatus includes a high frequency power source connected between a processing chamber and a base stand; a gas storage unit provided within the base stand and configured to store a gas; a blocking mechanism configured to block a gas introducing port of the gas storage unit; and a connection unit configured to connect a space between a disposition position of a wafer and the base stand, to the gas storage unit.