Abstract: Evaporated matters and reaction products produced in a furnace can be exhausted without contacting with a graphite crucible and a heater, and an exhaust pipe per se can be maintained at a high temperature to suppress the deposition and condensation of the evaporated matters and reaction products, whereby the clogging of the exhaust pipe is prevented, in addition, a conversion of the exhaust pipes per se into SiC is suppressed to improve the durability of the exhaust pipe, and the change in thermal expansion coefficient is suppressed, whereby a thermal single crystal can be pulled up in high quality. Further, the exhaust pipe is formed of a small number of materials to reduce a production cost. A heat shield (12) made of a heat insulating material is provided outside a heater (6), and a plurality of exhaust pipes (20) are provided between the heater (6) and the heat shield (12).

Abstract: A semiconductor single crystal manufacturing apparatus which can manufacture a single crystal of high oxygen concentration to that of low oxygen concentration within a prescribed standard range of oxygen concentration, as a wafer material for semiconductor integrated circuits, with a high yield, is provided. Heat shields 20, 21 are provided in the entire annular area between respective adjacent heaters of the heaters 4a, 4b, 4c for heating the crucible 3 from the outside periphery side. By using the heat shields 20, 21 for localizing the respective heating regions for the heaters to actively control the temperature distribution for the crucible 3 and melt 8 in the crucible, a single crystal of high oxygen concentration to that of low oxygen concentration can be manufactured within a prescribed standard range of oxygen concentration with a high yield.

Abstract: Evaporated matters and reaction products produced in a furnace can be exhausted without contacting with a graphite crucible and a heater, and an exhaust pipe per se can be maintained at a high temperature to suppress the deposition and condensation of the evaporated matters and reaction products, whereby the clogging of the exhaust pipe is prevented, in addition, a conversion of the exhaust pipes per se into SiC is suppressed to improve the durability of the exhaust pipe, and the change in thermal expansion coefficient is suppressed, whereby a thermal single crystal can be pulled up in high quality. Further, the exhaust pipe is formed of a small number of materials to reduce a production cost. A heat shield (12) made of a heat insulating material is provided outside a heater (6), and a plurality of exhaust pipes (20) are provided between the heater (6) and the heat shield (12).

Abstract: A semiconductor single crystal manufacturing apparatus which can manufacture a single crystal of high oxygen concentration to that of low oxygen concentration within a prescribed standard range of oxygen concentration, as a wafer material for semiconductor integrated circuits, with a high yield, is provided. Heat shields 20, 21 are provided in the entire annular area between respective adjacent heaters of the heaters 4a, 4b, 4c for heating the crucible 3 from the outside periphery side. By using the heat shields 20, 21 for localizing the respective heating regions for the heaters to actively control the temperature distribution for the crucible 3 and melt 8 in the crucible, a single crystal of high oxygen concentration to that of low oxygen concentration can be manufactured within a prescribed standard range of oxygen concentration with a high yield.

Abstract: This invention relates to a car storage apparatus in a car carrier having a plurality of stages of car storage decks. The car storage apparatus comprises a car loading port installed at the ship side on one of the decks, a loading/unloading berth extending from the loading port into the ship, elevator shafts extending vertically through the car storage decks, a lifter which is disposed in each elevator shaft and moves up and down with a car being mounted thereon, and conveyors which are installed on the loading/unloading berth, lifters, and car storage decks for transferring a car between them.

Abstract: Continuous inorganic fibers consisting substantially of Si, Zr and C and optionally of O, said fibers being composed of (1) an amorphous material consisting substantially of Si, Zr and C and optionally of O, or (2) an aggregate consisting substantially of ultrafine crystalline particles of .beta.-SiC, ZrC, a solid solution of .beta.-SiC and ZrC and ZrC.sub.1-x wherein O<x<1 and having a particle diameter of not more than 500 .ANG., in which amorphous SiO.sub.2 and ZrO.sub.2 sometimes exist in the neighborhood of these ultrafine crystalline particles, or (3) a mixture of said amorphous material (1) and said aggregate (2) of ultrafine crystalline particles. The aforesaid continuous inorganic fibers can be produced by the following steps: a first step of preparing a semi-inorganic block copolymer comprising polycarbosilane blocks having a main chain skeleton composed mainly of carbosilane units of the formula --Si--CH.sub.

Abstract: Continuous inorganic fibers consisting substantially of Si, Zr and C and optionally of O, said fibers being composed of (1) an amorphous material consisting substantially of Si, Zr and C and optionally of O, or (2) an aggregate consisting substantially of ultrafine crystalline particles of .beta.-SiC, ZrC, a solid solution of .beta.-SiC and ZrC and ZrC.sub.1-x wherein 0<x<1 and having a particle diameter of not more than 500.ANG., in which amorphous SiO.sub.2 and ZrO.sub.2 sometimes exist in the neighborhood of these ultrafine crystalline particles, or (3) a mixture of said amorphous material (1) and said aggregate (2) of ultrafine crystalline particles. The aforesaid continuous inorganic fibers can be produced by the following steps: a first step of preparing a semi-inorganic block copolymer comprising polycarbosilane blocks having a main chain skeleton composed mainly of carbosilane units of the formula --Si--CH.sub.