Abstract: A catalyst for exhaust gas purification having superior exhaust gas purification performance is provided. Disclosed is a catalyst containing, as a catalyst support, a composite phosphate containing yttrium and phosphorus and having a composition ratio of yttrium to phosphorus (Y/P) of greater than 1 as a molar ratio.

Abstract: A thermoplastic resin composition comprising: (A) a graft copolymer obtained by grafting, onto a rubber polymer, at least one monomer selected from the group consisting of an aromatic vinyl monomer, a vinyl cyanide monomer and other copolymerizable monomers; (B) a polymer obtained by polymerizing at least one monomer selected from the group consisting of an aromatic vinyl monomer, a vinyl cyanide monomer and other copolymerizable monomers; (C) an amorphous polyester; and (D) an aromatic polycarbonate, wherein the component (C) comprises a diol component, a 2,2,4,4-tetramethyl-1,3-cyclobutanediol (TMCD) residue is contained in an amount of 10 to 70 mol % and a 1,4-cyclohexanedimethanol (CHDM) residue is contained in an amount of 30 to 90 mol %, provided that the total mol % of the diol components is regarded as 100 mol %.

Abstract: A thermoplastic resin composition which contains (A) a graft copolymer that is obtained by grafting at least two kinds of monomers, which are selected from the group consisting of aromatic vinyl monomers, vinyl cyanide monomers and other copolymerizable monomers, onto a rubbery polymer, (B) a polymer that is obtained by polymerizing at least two kinds of monomers, which are selected from the group consisting of aromatic vinyl monomers, vinyl cyanide monomers and other copolymerizable monomers, and (C) a polyester that contains at least an alicyclic diol and an aromatic dicarboxylic acid. When the total of the components (A)-(C) is taken at 100% by mass, the component (A) is 15-50% by mass; and the component (A) has a linear expansion coefficient of from 12.5×10?5/° C. to 19×10?5/° C.

Abstract: A catalyst for exhaust gas purification having superior exhaust gas purification performance is provided. Disclosed is a catalyst containing, as a catalyst support, a composite phosphate containing yttrium and phosphorus and having a composition ratio of yttrium to phosphorus (Y/P) of greater than 1 as a molar ratio.

Abstract: An object of the present invention is to provide a capacitor-forming material having a stable adhesion between a dielectric layer and an electrode-forming layer. To achieve the object, the capacitor-forming material in which an oxides dielectric layer is provided between a top-electrode-forming layer and a bottom-electrode-forming layer, wherein at least one of the top-electrode-forming layer and the bottom-electrode-forming layer has a two-layer construction constituted with a bulk-metal layer and a composite layer composed of metal and metal oxide which is made to contact with the oxides dielectric layer.

Abstract: An object of the present invention is to provide a material for forming a capacitor layer comprising a dielectric layer formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method. The material can reduce a leakage current of a capacitor circuit. In order to achieve the object, a material for forming a capacitor layer comprising a dielectric layer between a first conductive layer to be used for forming a top electrode and a second conductive layer to be used for forming a bottom electrode, characterized in that the dielectric layer is a dielectric oxide film formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method; and particles constituting the dielectric oxide film are impregnated with a resin component is employed.

Abstract: The present invention has an object to provide a method for forming an oxide dielectric layer, which dielectric layer is formed by applying the sol-gel method, and is hardly damaged by an etching solution and excellent in dielectric characteristics such as a large electric capacitance. To achieve the object, the forming method of an oxide dielectric layer by applying a sol-gel method characterized by being provided with the following processes (a) to (c) is employed. Process (a): A solution preparing process of preparing a sol-gel solution for manufacturing an aiming oxide dielectric layer. Process (b): A coating process wherein stages of the sol-gel solution coating on the surface of a metal substrate followed by drying in an oxygen-containing atmosphere followed by pyrolysis in an oxygen-containing atmosphere sequentially is made one unit step; the one unit step is repeated twice or more times; and a pre-baking stage at 550-deg.C to 1000-deg.

Abstract: An object of the present invention is to provide a material for forming a capacitor layer comprising a dielectric layer formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method. The material can reduce a leakage current of a capacitor circuit. In order to achieve the object, a material for forming a capacitor layer comprising a dielectric layer between a first conductive layer to be used for forming a top electrode and a second conductive layer to be used for forming a bottom electrode, characterized in that the dielectric layer is a dielectric oxide film formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method; and particles constituting the dielectric oxide film are impregnated with a resin component is employed.

Abstract: A capacitor layer forming material that consists of a dielectric film making use of the sol-gel process excelling in production cost merit, being capable of producing a capacitor circuit of prolonged life having a nonconventional high electric capacity. There is provided capacitor layer forming material (1) having dielectric layer (4) interposed between first conductive layer (2) for formation of an upper electrode and second conductive layer (3) for formation of a lower electrode, characterized in that the dielectric layer (4) consists of an oxide dielectric film produced by the sol-gel process containing an oxide crystal structure of 50 to 300 nm grain diameter (major axis) being a coarse crystal structure having grown in the thickness direction and plane direction of the dielectric layer. Further, there is provided a process for efficiently producing this capacitor layer forming material.

Abstract: The object is to provide a material for forming a capacitor layer which is excellent in adhesion within a dielectric layer and a bottom electrode of a capacitor circuit. And to provide a material for forming a capacitor layer which has a new conductive layer for forming a bottom electrode capable of being used as an electrode serving also as a resistance circuit and the like. To solve the problem, the invention provides a conductive layer in which a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer or a nickel-phosphorus alloy layer, a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer, to assure excellent adhesion within the bottom electrode of a capacitor circuit and the dielectric layer in a printed wiring board having a dielectric layer between an top electrode and a bottom electrode.

Abstract: It is an object of the present invention to provide a capacitor layer forming material which is applicable to printed wiring boards manufactured through a high-temperature processing of 300° C. to 400° C. of a fluorine-contained resin substrate, a liquid crystal polymer and the like, and exhibits no deterioration of the strength after a high-temperature heating. In order to achieve the object, a capacitor layer forming material for a printed wiring board which comprises a first conductive layer used for forming a top electrode, a second conductive layer used for forming a bottom electrode and a dielectric layer between the first and second conductive layers, characterized in that for the second conductive layer, a nickel layer or a nickel alloy layer is employed. The nickel layer or the nickel alloy layer as the second conductive layer preferably has a thickness of 10 micron meter to 100 micron meter.

Abstract: The object is to provide a material for forming a capacitor layer which is excellent in adhesion within a dielectric layer and a bottom electrode of a capacitor circuit. And to provide a material for forming a capacitor layer which has a new conductive layer for forming a bottom electrode capable of being used as an electrode serving also as a resistance circuit and the like. To solve the problem, the invention provides a conductive layer in which a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer or a nickel-phosphorus alloy layer, a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer, to assure excellent adhesion within the bottom electrode of a capacitor circuit and the dielectric layer in a printed wiring board having a dielectric layer between an top electrode and a bottom electrode.

Abstract: A copper foil which is substantially free of generation of voids even if fusing treatment is conducted on a tin-plated layer and which is excellent in etching properties is provided. To achieve this object, a pure copper-coated copper foil in which a pure-copper plated layer is formed at least on a gloss surface of a base copper foil is employed. The pure copper-plated layer preferably has a thickness of not less than 0.3 ?m. A method of producing a pure copper-coated copper foil, in which electrolysis is conducted using, as an electrolyte, an aqueous sulfuric acid-copper sulfate solution having a Cl? ion concentration of not more than 0.5 mg/l with a base copper foil serving as a cathode, thereby forming a pure copper-plated layer at least on a gloss surface of the base copper foil. The aqueous sulfuric acid-copper sulfate solution preferably has a Cu2+ ion concentration of 40 g/l to 120 g/l and a free SO42? ion concentration of 100 g/l to 200 g/l.

Abstract: This invention provides a composite foil comprising an organic release layer between a metal carrier layer and an ultra-thin copper foil, and a process for producing such composite foils comprising the steps of depositing the organic release layer on the metal carrier layer and then forming an ultra-thin copper foil layer on said organic release layer by electrodeposition. The organic release layer preferably is a nitrogen-containing compound, a sulfur-containing compound, or a carboxylic acid, which provides a uniform bond strength which is adequate to prevent separation of the carrier and ultra-thin copper foil during handling and lamination, but which is significantly lower than the peel strength of a copper/substrate bond, so that the carrier can easily be removed after lamination of the composite foil to an insulating substrate. The invention also includes laminates made from such composite foils and printed wiring boards made from such laminates.

Abstract: A thin film electro-luminescence composition comprising an alkaline earth metal thiogallate represented by the following compositional formula: ##EQU1## wherein M.sup.1 is Sr or Ba; RE is a lanthanoid element; a and b are integers which are different from each other; and wherein x is 0.001 to 0.1 with the proviso that ##EQU2## is excluded or comprising an alkaline earth metal thioaluminate represented by the following compositional formula: ##EQU3## wherein M.sup.2 is Ca, Sr or Ba; RE is a lanthanoid element; c and d are integers which may be different from each other; and wherein y is 0.001 to 0.1,and a thin film electro-luminescence device comprising said thin film electro-luminescence composition as a luminescence layer.