Abstract: A method of synthesizing a Group III element-phosphorus compound wherein a mixture of the Group III element and phosphorus is subjected to a liquid-phase reaction under heated and pressurized conditions, thereby forming a polycrystal compound of the Group III element and phosphorus. The compound of Group III element and phosphorus obtained as a result of the liquid-phase reaction may be immediately pull up with a use of a seed crystal to form a monocrystal of the Group III element-phosphorus compound.

Abstract: A green light emitting device, includes an n-type gallium phosphide (GaP) substrate, an n-type GaP layer and a p-type GaP layer laminated on the n-type GaP substrate. The net donor concentration in the n-type GaP layer decreases abruptly in steps from the GaP substrate side to the p-type GaP layer side. Nitrogen is contained in only the n-type GaP layer portion closest to the p-type GaP layer.

Abstract: A green light emitting device, includes an n-type gallium phosphide (GaP) substrate, an n-type GaP layer and a p-type GaP layer laminated on the n-type GaP substrate. The net donor concentration in the n-type GaP layer decreases abruptly in steps from the GaP substrate side to the p-type GaP layer side. Nitrogen is contained in only the n-type GaP layer portion closest to the p-type GaP layer.

Abstract: A red light-emitting gallium phosphide device of high electroluminescent efficiency which comprises an n-type gallium phosphide substrate containing a donor at concentrations ranging from 1.times.10.sup.17 cm.sup.-3 to 3.times.10.sup.17 cm.sup.-3, an n-type gallium phosphide layer formed on said substrate with a donor concentration in the neighborhood of a p-n junction set at a level ranging from 2.times.10.sup.17 cm.sup.-3 to 5.5.times.10.sup.17 cm.sup.-3 and a p-type gallium phosphide layer grown on said n-type gallium phosphide layer with a net acceptor concentration and an oxygen donor concentration in the neighborhood of the p-n junction chosen to range from 1.times.10.sup.17 cm.sup.-3 to 3.times.10.sup.17 cm.sup.-3 and 0.1.times.10.sup.16 cm.sup.-3 to 8.times.10.sup.16 cm.sup.-3, respectively.

Abstract: An apparatus for liquid-phase epitaxial growth is characterized in that the greater part of that surface of a well, made of carbon, which contacts with a solution for liquid-phase epitaxial growth is covered with a fused quartz layer.

Abstract: A red light emitting gallium phosphide device comprises an n-type substrate, an n-type layer formed on the substrate using a liquid phase epitaxial growth method, and a p-type layer formed on the n-type layer using the liquid phase epitaxial growth method, the donor concentration of the n-type layer ranging from 1.8 .times. 10.sup.17 cm.sup..sup.-3 to 5.8 .times. 10.sup.17 cm.sup..sup.-3.

Abstract: A method of manufacturing a gallium phosphide (GaP) red-emitting device by forming at least one n-type GaP layer on an n-type GaP substrate by the liquid phase epitaxial growth process and further depositing a p-type GaP layer on said n-type GaP layer, thereby providing a p-n junction contributing to emission of light, characterized in that the method comprises reducing the surface donor concentration of the n-type GaP layer to below 1 .times. 10.sup.18 cm.sup.-.sup.3 ; and epitaxially growing at least the light emitting region of the p-type GaP layer by cooling a solution for epitaxial growth of said p-type GaP layer at a slower rate than 5.degree.C per minute.

Abstract: A red light-emitting gallium phosphide device provided with a p-n junction contributing to the emission of light, wherein the maximum concentration of an oxygen donor in a depletion layer surrounding the p-n junction ranges from 1 .times. 10.sup.12 cm.sup.-.sup.3 to 5 .times. 10.sup.14 cm.sup.-.sup.3.