Abstract: A laminate including, a base material layer; a first polyethylene resin layer containing a first polyethylene resin and having a melt flow rate of less than 5 g/10 minutes, and a second polyethylene resin layer containing a second polyethylene resin and having a melt flow rate of 5 to 12 g/10 minutes, in this order, in which a ratio R2 (Mw/Mn) of a weight-average molecular weight Mw to a number average molecular weight Mn of the second polyethylene resin is 7 or less.

Abstract: There are provided an optical filter excellent in weather resistance and a method for manufacturing an optical filter. The optical filter of the present invention includes a transparent substrate, and an optical multilayer film provided on a surface of the transparent substrate. In the optical multilayer film, a low-refractive index film containing silicon oxide (SiO2) and a high-refractive index film higher in refractive index than the low-refractive index film are alternately stacked. A density of a portion of the low-refractive index film close to an interface between the low-refractive index film and the high-refractive index film is lower than a density of a portion of the low-refractive index film other than the portion close to the interface.

Abstract: There are provided an optical filter excellent in weather resistance and a method for manufacturing an optical filter. The optical filter of the present invention includes a transparent substrate, and an optical multilayer film provided on a surface of the transparent substrate. In the optical multilayer film, a low-refractive index film containing silicon oxide (SiO2) and a high-refractive index film higher in refractive index than the low-refractive index film are alternately stacked. A density of a portion of the low-refractive index film close to an interface between the low-refractive index film and the high-refractive index film is lower than a density of a portion of the low-refractive index film other than the portion close to the interface.

Abstract: A semiconductor integrated circuit is provided with: a variable resistor section, a variable delay section and a data fetch section. The variable resistor section provides damping for a data signal inputted thereto to thereby generate a damped data signal. The damping resistance of the damping is variable. The variable delay section gives a variable delay to a clock signal to thereby generate a delayed clock signal. The data fetch section fetches data from the damped data signal in synchronization with the delayed clock signal.

Abstract: The semiconductor device according to the present invention includes a semiconductor chip having a delay unit and a delay time measuring unit for measuring a delay time. The delay time measuring unit generates a measurement result signal, which is a digital signal, based on the delay time, and outputs the measurement result signal outside the semiconductor chip.

Abstract: The semiconductor device according to the present invention includes a semiconductor chip having a delay unit and a delay time measuring unit for measuring a delay time. The delay time measuring unit generates a measurement result signal, which is a digital signal, based on the delay time, and outputs the measurement result signal outside the semiconductor chip.