Patents by Inventor Akio Fukushima
Akio Fukushima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220222564Abstract: The present invention addresses the problem of providing a quantum bit cell and a quantum bit integrated circuit having an easy-to-integrate structure. The quantum bit cell of the present invention including a spin torque oscillator capable of emitting a microwave with a propagation distance of 1 ?m or less and having a maximum diameter of 1 ?m or less, and a solid-state element quantum bit arranged near the spin torque oscillator at an interval of the propagation distance or less, where a quantum two-level system is controlled by the microwave.Type: ApplicationFiled: April 14, 2020Publication date: July 14, 2022Inventors: Hitoshi Kubota, Shingo Tamaru, Akio Fukushima, Takahiro Mori, Takashi Matsukawa
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Patent number: 10432144Abstract: A high-frequency phase-locked oscillation circuit having an extremely narrow peak width and a stable frequency so that a high-frequency wave that is oscillated by the MR element solves a problem of a large peak width of oscillation spectrum. The high-frequency phase-locked oscillation circuit includes a magnetoresistive element that oscillates a high-frequency wave with an oscillating frequency; a reference signal source that outputs a reference signal with a reference frequency; a phase-locked loop circuit having a phase comparator, a loop filter, and a frequency divider; an adder that adds a phase error signal output from the loop filter and a bias voltage for oscillating the high-frequency wave from the magnetoresistive element, and that inputs an added bias voltage to the magnetoresistive element; and a filter provided between the frequency divider and the magnetoresistive element.Type: GrantFiled: April 27, 2016Date of Patent: October 1, 2019Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Shingo Tamaru, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa
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Publication number: 20180302035Abstract: The present invention provides a high-frequency phase-locked oscillation circuit having an extremely narrow peak width and a stable frequency so that a high-frequency wave that is oscillated by the MR element solves a problem of a large peak width of oscillation spectrum.Type: ApplicationFiled: April 27, 2016Publication date: October 18, 2018Inventors: Shingo Tamaru, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa
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Patent number: 9620189Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.Type: GrantFiled: November 20, 2015Date of Patent: April 11, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naoharu Shimomura, Eiji Kitagawa, Minoru Amano, Daisuke Saida, Kay Yakushiji, Takayuki Nozaki, Shinji Yuasa, Akio Fukushima, Hiroshi Imamura, Hitoshi Kubota
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Patent number: 9437810Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu.Type: GrantFiled: February 28, 2014Date of Patent: September 6, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Eiji Kitagawa, Takao Ochiai, Kay Yakushiji, Makoto Konoto, Hitoshi Kubota, Shinji Yuasa, Takayuki Nozaki, Akio Fukushima
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Publication number: 20160118098Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.Type: ApplicationFiled: November 20, 2015Publication date: April 28, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Naoharu SHIMOMURA, Eiji KITAGAWA, Minoru AMANO, Daisuke SAIDA, Kay YAKUSHIJI, Takayuki NOZAKI, Shinji YUASA, Akio FUKUSHIMA, Hiroshi IMAMURA, Hitoshi KUBOTA
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Patent number: 9230628Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.Type: GrantFiled: March 6, 2014Date of Patent: January 5, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naoharu Shimomura, Eiji Kitagawa, Minoru Amano, Daisuke Saida, Kay Yakushiji, Takayuki Nozaki, Shinji Yuasa, Akio Fukushima, Hiroshi Imamura, Hitoshi Kubota
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Patent number: 9219227Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.Type: GrantFiled: November 20, 2014Date of Patent: December 22, 2015Assignees: KABUSHIKI KAISHA TOSHIBA, WPI-AIMR, Tohoku UniversityInventors: Tadaomi Daibou, Junichi Ito, Tadashi Kai, Minoru Amano, Hiroaki Yoda, Terunobu Miyazaki, Shigemi Mizukami, Koji Ando, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Akio Fukushima, Taro Nagahama, Takahide Kubota
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Patent number: 9182304Abstract: A power meter includes a first measurement unit 7 that measures a force applied to a first pedal B322 and calculates predetermined first information (power and/or torque) on the first pedal B322, and a second measurement unit 6 that measures a force applied to a second pedal B321 and calculates second information (power and/or torque) on the second pedal B321, which is the same kind of the first information. The first measurement unit 7 transmits first information data indicating the first information to the second measurement unit 6, and the second measurement unit 6 adds the first information to the second measurement information and transmits an added value data indicating an added value obtained by adding the first information to the second information.Type: GrantFiled: September 30, 2011Date of Patent: November 10, 2015Assignee: PIONEER CORPORATIONInventors: Tsuyoshi Namiki, Ryujiro Fujita, Takehiko Shioda, Akio Fukushima, Yasuteru Kodama, Ryushin Kametani
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Patent number: 9087980Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.Type: GrantFiled: February 18, 2014Date of Patent: July 21, 2015Assignees: KABUSHIKI KAISHA TOSHIBA, WPI-AIMR, Tohoku UniversityInventors: Tadaomi Daibou, Junichi Ito, Tadashi Kai, Minoru Amano, Hiroaki Yoda, Terunobu Miyazaki, Shigemi Mizukami, Koji Ando, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Akio Fukushima, Taro Nagahama, Takahide Kubota
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Publication number: 20150076635Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.Type: ApplicationFiled: November 20, 2014Publication date: March 19, 2015Applicants: KABUSHIKI KAISHA TOSHIBA, WPI-AIMR, Tohoku UniversityInventors: Tadaomi DAIBOU, Junichi ITO, Tadashi KAI, Minoru AMANO, Hiroaki YODA, Terunobu MIYAZAKI, Shigemi MIZUKAMI, Koji ANDO, Kay YAKUSHIJI, Shinji YUASA, Hitoshi KUBOTA, Akio FUKUSHIMA, Taro NAGAHAMA, Takahide KUBOTA
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Publication number: 20140283622Abstract: There are provided a versatile power meter, a power measurement method, a program and a recording medium. The power meter includes a first measurement unit 7 that measures a force applied to a first pedal B322 and calculates predetermined first information (power and/or torque) on the first pedal B322, and a second measurement unit 6 that measures a force applied to a second pedal B321 and calculate second information (power and/or torque) on the second pedal B321, which is the same kind of the first information. The first measurement unit 7 transmits first information data indicating the first information to the second measurement unit 6, and the second measurement unit 6 adds the first information to the second measurement information and transmits an added value data indicating an added vale obtained by adding the first information to the second information.Type: ApplicationFiled: September 30, 2011Publication date: September 25, 2014Applicant: PIONEER CORPORATIONInventors: Tsuyoshi Namiki, Ryujiro Fujita, Takehiko Shioda, Akio Fukushima, Yasuteru Kodama, Ryushin Kametani
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Publication number: 20140269038Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.Type: ApplicationFiled: March 6, 2014Publication date: September 18, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Naoharu SHIMOMURA, Eiji KITAGAWA, Minoru AMANO, Daisuke SAIDA, Kay YAKUSHIJI, Takayuki NOZAKI, Shinji YUASA, Akio FUKUSHIMA, Hiroshi IMAMURA, Hitoshi KUBOTA
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Publication number: 20140264673Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu.Type: ApplicationFiled: February 28, 2014Publication date: September 18, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Eiji Kitagawa, Takao Ochiai, Kay Yakushiji, Makoto Konoto, Hitoshi Kubota, Shinji Yuasa, Takayuki Nozaki, Akio Fukushima
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Publication number: 20140159177Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization In a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.Type: ApplicationFiled: February 18, 2014Publication date: June 12, 2014Applicants: WPI-AIMR, Tohoku University, Kabushiki Kaisha ToshibaInventors: Tadaomi DAIBOU, Junichi Ito, Tadashi Kai, Minoru Amano, Hiroaki Yoda, Terunobu Miyazaki, Shigemi Mizukami, Koji Ando, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Akio Fukushima, Taro Nagahama, Takahide Kubota
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Patent number: 8705269Abstract: A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.Type: GrantFiled: September 14, 2011Date of Patent: April 22, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Toshihiko Nagase, Tadashi Kai, Makoto Nagamine, Katsuya Nishiyama, Eiji Kitagawa, Tadaomi Daibou, Koji Ueda, Hiroaki Yoda, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Taro Nagahama, Akio Fukushima, Koji Ando
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Patent number: 8680632Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.Type: GrantFiled: December 2, 2011Date of Patent: March 25, 2014Assignees: Kabushiki Kaisha Toshiba, WPI-AIMR, Tohoku UniversityInventors: Tadaomi Daibou, Junichi Ito, Tadashi Kai, Minoru Amano, Hiroaki Yoda, Terunobu Miyazaki, Shigemi Mizukami, Koji Ando, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Akio Fukushima, Taro Nagahama, Takahide Kubota
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Publication number: 20130288397Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.Type: ApplicationFiled: July 1, 2013Publication date: October 31, 2013Inventors: Eiji Kitagawa, Tadaomi Daibou, Yutaka Hashimoto, Masaru Tokou, Tadashi Kai, Makato Nagamine, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Hiroaki Yoda, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Taro Nagahama, Akio Fukushima, Koji Ando
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Patent number: 8521795Abstract: A random number generating device is constructed such that it has improved random number generation rate and allows for construction of compact circuit with ease. The random number generating device includes a magnetoresistive element that has three layers consisting of a magnetization free layer, an interlayer, and a magnetization fixed layer, and has at least two resistance values depending on arrangement of magnetization in the magnetization free layer and the magnetization fixed layer, wherein the magnetoresistive element is subjected to be applied with a magnetization current so that the inversion probability of the magnetization free layer assumes a value between 0 and 1, through which the resistance value of the magnetoresistive element is extracted as random numbers.Type: GrantFiled: March 24, 2008Date of Patent: August 27, 2013Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Akio Fukushima, Hitoshi Kubota, Kay Yakushiji, Shinji Yuasa, Koji Ando
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Patent number: 8502331Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.Type: GrantFiled: September 16, 2011Date of Patent: August 6, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Eiji Kitagawa, Tadaomi Daibou, Yutaka Hashimoto, Masaru Tokou, Tadashi Kai, Makoto Nagamine, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Hiroaki Yoda, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Taro Nagahama, Akio Fukushima, Koji Ando