Patents by Inventor Akio Koyama

Akio Koyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040234439
    Abstract: The present invention provides a porous composite oxide comprising an aggregate of secondary particles in the form of aggregates of primary particles of a composite oxide containing two or more types of metal elements, and having mesopores having a pore diameter of 2-100 nm between the secondary particles; wherein, the percentage of the mesopores between the secondary particles having a diameter of 10 nm or more is 10% or more of the total mesopore volume after firing for 5 hours at 600° C. in an oxygen atmosphere.
    Type: Application
    Filed: May 19, 2004
    Publication date: November 25, 2004
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Shinichi Takeshima, Kohei Yoshida, Akio Koyama
  • Patent number: 6310343
    Abstract: An electron impact elastic recoil hydrogen atom analyzer includes an electron gun that projects an electron beam on a surface of a specimen for electron bombardment to make hydrogen atoms contained in the specimen elastically recoil, a hydrogen detecting unit that detects hydrogen atoms emitted from the specimen, and a data processing unit that determines a depth-distribution of hydrogen in the specimen on the basis of data provided by the hydrogen detecting unit. The hydrogen detecting unit includes an ionizer for ionizing hydrogen atoms emitted from the specimen, a deflector for energy analysis of hydrogen ions, and an electron multiplying channel plate for detecting the deflected hydrogen ions.
    Type: Grant
    Filed: January 27, 2000
    Date of Patent: October 30, 2001
    Assignee: Riken
    Inventors: Akio Koyama, Tsuyoshi Horiki, Akira Yoneda
  • Patent number: 6299680
    Abstract: An object of the present invention is to reduce the etch pit density (EPD) and the full-width-half-maximum (FWHM) value of the double crystal X-ray rocking curve, and to provide a CdTe crystal or a CdZnTe crystal which does not include deposits having Cd or Te and the process for producing the same. After a CdTe crystal or a CdZnTe crystal was grown, while the temperature of the crystal is from 700 to 1050° C., the Cd pressure is adjusted so as to keep the stoichiometry of the crystal at the above temperature. The crystal is left for time t which is determined so that each of a diameter L(r) of the crystal and a length L(z) thereof satisfies the following equation 1: {L(r),(L(z))}/2<{4exp(−1.15/kT)×t}½. Then, when the crystal is cooled, the temperature of the crystal is decreased within a range in which the temperature of the crystal and that of a Cd reservoir satisfy the following equation 2: −288+1.68×TCd<TCdTe<402+0.76×TCd.
    Type: Grant
    Filed: January 6, 2000
    Date of Patent: October 9, 2001
    Assignee: Japan Energy Corporation
    Inventors: Akio Koyama, Ryuichi Hirano
  • Patent number: 4939106
    Abstract: High-quality ceramic bodies suitable for use as a substrate of electronic devices can be prepared by sintering, at an outstandingly low temperature of 1000.degree. C. or below, a binary powder mixture composed of 30-50% by weight of a non-glassy phase of aluminum oxide and 70-50% by weight of a glassy phase having a quaternary composition composed of silicon dioxide, boron oxide, aluminum oxide and one or more of alkaline earth metal oxides, of which at least 60% by weight is strontium oxide, each constituent being formulated in a specified weight fraction. The ceramic body is particularly advantageous over conventional ones, along with the high mechanical strengths and low dielectric constant, in respect of the resistance against migration of metals therethrough when the ceramic body is in contact with metal-made parts such as electrodes.
    Type: Grant
    Filed: August 26, 1988
    Date of Patent: July 3, 1990
    Assignee: TDK Corporation
    Inventors: Toshinobu Miyakoshi, Atsushi Yamada, Akio Koyama, Hideaki Ninomiya
  • Patent number: 4615964
    Abstract: A vapor-deposited film of selenium as a photoreceptor for electrophotography contains not more than 50 parts per million of oxygen. In producing the film, the oxygen content in the starting material selenium is controlled so that the resulting film contains oxygen within the specified range. The original oxygen content is reduced by vacuum distillation of the material selenium in a high vacuum, reduced-pressure distillation in high purity hydrogen, or preservation of the selenium shot in vacuo or in an inert gas. The starting material is obtained by mixing or melting selenium with a predetermined amount of selenium dioxide, or by carrying out vacuum distillation either of selenium at a vacuum degree of about 10.sup.-2 torr and thereby converting part of the material selenium into selenium dioxide, or of a mixture of selenium and a predetermined amount of selenium dioxide. The vacuum degree during the vapor deposition is controlled so that the oxygen content in the resulting film is 50 ppm or less.
    Type: Grant
    Filed: January 6, 1984
    Date of Patent: October 7, 1986
    Assignee: Nihon Kogyo Kabushiki Kaisha
    Inventors: Osamu Oda, Arata Onozuka, Akio Koyama
  • Patent number: 4585621
    Abstract: A vapor-deposited film of selenium or selenium alloy as a photoreceptor for electrophotography comprises selenium or a selenium alloy and phosphorus contained therein in an amount of not less the 0.5 ppm and adjusted to attain a desired contrast potential. The selenium alloy is selected from Se-Te, Se-As, Se-Bi, and Se-Sb alloys. The film is produced either by adding phosphorus to stock selenium or selenium alloy and then vacuum-depositing the phosphorus-containing selenium or selenium alloy or by simultaneously vapor-depositing selenium or selenium alloy and elemental phosphorus or a phosphorus compound.
    Type: Grant
    Filed: June 29, 1984
    Date of Patent: April 29, 1986
    Assignee: Nihon Kogyo Kabushiki Kaisha
    Inventors: Osamu Oda, Arata Onozuka, Akio Koyama
  • Patent number: 4414424
    Abstract: A gas-insulated bus bar, wherein each end of a plurality of support arms for holding bus conductors substantially in the center of a case which faces the inner peripheral wall of the case is fitted with a metal member whose end spatially faces the inner peripheral wall of the case; an annular groove is formed in the end portion of the metal member; an annular sliding member prepared from an elastic electrically insulating synthetic resin capable of easily sliding over the inner peripheral wall of the case is inserted into the annular groove in a state to project from the end of the metal member to be pressed against the inner peripheral wall of the case; a radially extending hole open to the inner peripheral wall of the case is formed in said end of the metal member; a metal button is inserted into said hole in a state urged toward the inner peripheral wall of the case; and the support arms are elastically pressed against the inner peripheral wall of the case.
    Type: Grant
    Filed: October 19, 1981
    Date of Patent: November 8, 1983
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Tetsuhiko Mizoguchi, Akio Koyama