Abstract: A rocking actuator and a laser machining apparatus which can suppress a temperature rise of a permanent magnet in a moving-magnet actuator. Even when a steerable mirror is positioned by rapid and continuous motions, highly reliable machining can be performed without degrading machining throughput or hole position accuracy. A cooling jacket for cooling a casing and heat transfer units brought into contact with a coil and the casing are provided. Heat generated in the coil is introduced to the casing through the heat transfer bypass units. Thus, the temperature rise of the coil is suppressed. Radial grooves are provided in the permanent magnet opposed to the coil so as to prevent an eddy current from appearing therein. Groove depth is made not smaller than skin depth expressed by a function of volume resistivity and permeability of the permanent magnet and a fundamental frequency of a current applied to the coil.

Abstract: An organic thin-film transistor (TFT) with a large carrier mobility includes a drain electrode, a source electrode, which are made of different materials, and a semiconductor layer formed on upper surface of a substrate. Equipment for manufacturing the organic TFT comprises a substrate mounting unit, a painting unit, a light irradiating unit, a sealed container for housing the above units, and a gas supplying unit of an antioxidant gas to the sealed container. The organic TFT to be manufactured is placed on the substrate mounting unit and a semiconductor layer is formed by using the painting unit. The painted semiconductor layer is dried with a light by using the light irradiating unit. When the light with substantially uniform wavelength is irradiated to the drain and the source electrodes, a temperature gradient is caused in the semiconductor layer. Accordingly, an organic TFT with a large carrier mobility can be manufactured.

Abstract: To increase productivity of organic thin-film transistors, in an organic thin-film transistor manufacturing equipment, a liquid containing at least either one of a wiring material and a semiconductor material is coated on a substrate to form a number of organic thin-film transistors. Substrate carrying means carry the substrate. The substrate is heated by a first heating means, and the temperature of the substrate is controlled by a controller. The liquid containing at least either one of the wiring material and the semiconductor material is heated by a second heating means, and the temperature of this liquid is controlled also by the controller.

Abstract: A scanner has a rotor, and a stator disposed in the outside of the rotor. The rotor includes a shaft, and a permanent magnet mounted on the outer circumferential side of the shaft. The stator includes a casing, a yoke held in the inner circumferential side of the casing, and coils disposed in the inner circumferential side of the yoke. The permanent magnet of the rotor has radially depressed grooves formed in its outer circumferential portion. The torque constant of the scanner is circumferentially equalized by the grooves. Thus, positioning accuracy is improved.

Abstract: Molding sand having a high spherical degree and a low hygroscopicity produced from powder containing Al2O3 and SiO2, as main components by a flame fusion method, from which a mold having an excellent strength and a smooth surface is produced.

Abstract: An object such as an automobile part, an image forming apparatus part, a bicycle part, other machine parts, a sport article or its part, a toy or its part, or a rain article or its part has a portion to be in contact with a contact object. The contact portion is made of at least one kind of material selected from a group including polymer material such as resin or rubber as well as glass, and the contact portion has a surface entirely or partially coated with a carbon film (typically, a DLC film) having a wear resistance as well as at least one of a lubricity, a water repellency and a gas barrier property. The carbon film is formed on the object with a good adhesion.

Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

Abstract: A plasma processing apparatus includes a vacuum chamber having a structure that surrounds a space where plasma is generated, a sample stage disposed in the chamber on which a sample to be processed is placed and coil antenna providing an electric field to the space. The structure has a non-conductive member surrounding the space and a conductive member covering the non-conductive member, both of which are disposed between the antenna and the space. The conductive member is electrically floated at least when the plasma is generated.

Abstract: The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.

Abstract: The present invention provides a plasma CVD method for forming a plasma from a deposition material gas by application of an electric power, and thereby forming a film on a deposition target object in the plasma, wherein the formation of the plasma from the material gas is performed by applying an RF power and a DC power, and the DC power is applied to an electrode carrying the deposition target object. The present invention also provides a plasma CVD apparatus for forming a plasma from a deposition material gas by applying an electric power from the power applying means, and thereby forming a film on a deposition target object by exposing the deposition target object to the plasma, wherein the power applying means includes RF power applying means and DC power applying means, and the DC power applying means applies an electric power to the electrode carrying the deposition target object.

Abstract: A method for forming a silicon on insulator substrate includes the step of dissociating a plasma of molecules including at least any one of oxygen and nitrogen to obtain ions. The ions are accelerated by passage through gaps between acceleration electrodes at a predetermined acceleration energy for irradiation of the accelerated ions onto a silicon substrate which is heated to form an insulation film within the silicon substrate.

Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

Abstract: A method for forming a silicon on insulator substrate includes the step of dissociating a plasma of molecules including at least any one of oxygen and nitrogen to obtain ions. The ions are accelerated by passage through gaps between acceleration electrodes at a predetermined acceleration energy for irradiation of the accelerated ions onto a silicon substrate which is heated to form an insulation film within the silicon substrate.

Abstract: The present invention provides a plasma CVD method for forming a plasma from a deposition material gas by application of an electric power, and thereby forming a film on a deposition target object in the plasma, wherein the formation of the plasma from the material gas is performed by applying an RF power and a DC power, and the DC power is applied to an electrode carrying the deposition target object. The present invention also provides a plasma CVD apparatus for forming a plasma from a deposition material gas by applying an electric power from the power applying means, and thereby forming a film on a deposition target object by exposing the deposition target object to the plasma, wherein the power applying means includes RF power applying means and DC power applying means, and the DC power applying means applies an electric power to the electrode carrying the deposition target object.

Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

Abstract: The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.

Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

Abstract: The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.