Patents by Inventor Akira Fujimura

Akira Fujimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and System for Design of a Reticle to be Manufactured Using Variable Shaped Beam Lithography
    Publication number: 20130337372
    Abstract: A surface manufactured using variable shaped beam (VSB) shots is disclosed, where either: 1) the left edge of a first VSB shot intersects the top edge of a second VSB shot, and the bottom edge of the first VSB shot intersects the right edge of the second VSB shot; or 2) the left edge of the first VSB shot intersects the bottom edge of a second VSB shot, and the top edge of the first VSB shot intersects the right edge of the second VSB shot; and where neither shot crosses a field boundary of the VSB charged particle beam writer.
    Type: Application
    Filed: August 19, 2013
    Publication date: December 19, 2013
    Applicant: D2S, INC.
    Inventors: Akira Fujimura, Lance A. Glasser
  • Method for forming circular patterns on a surface
    Patent number: 8609306
    Abstract: A method for fracturing or mask data preparation for shaped beam charged particle beam lithography is disclosed, in which a square or nearly-square contact or via pattern is input, and a set of charged particle beam shots is determined which will form a circular or nearly-circular pattern on a surface, where the area of the circular or nearly-circular pattern is within a pre-determined tolerance of the area of the input square or nearly-square contact or via pattern. Methods for forming a pattern on a surface and for manufacturing a semiconductor device are also disclosed.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: December 17, 2013
    Assignee: D2S, Inc.
    Inventors: Akira Fujimura, Michael Tucker
  • Method and system for forming patterns using charged particle beam lithography with multiple exposure passes
    Patent number: 8612901
    Abstract: A method and system for optical proximity correction or fracturing or mask data preparation or mask process correction or proximity effect correction for charged particle beam lithography are disclosed in which a set of shaped beam shots is determined which, when used in a shaped beam charged particle beam writer, will form a pattern on the surface, where the set of shots includes shots for a plurality of exposure passes, and where the determination of the shots includes increasing the dose margin of the pattern by adding a shot in a single exposure pass.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: December 17, 2013
    Assignee: D2S, Inc.
    Inventor: Akira Fujimura
  • Method For Fracturing And Forming A Pattern Using Shaped Beam Charged Particle Beam Lithography
    Publication number: 20130316273
    Abstract: In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a plurality of circular or nearly-circular shaped beam shots can form a non-circular pattern on a surface. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming non-circular patterns on a surface using a plurality of circular or nearly-circular shaped beam shots is also disclosed.
    Type: Application
    Filed: August 5, 2013
    Publication date: November 28, 2013
    Applicant: D2S, INC.
    Inventors: Akira Fujimura, Michael Tucker
  • Method for design and manufacture of patterns with variable shaped beam lithography
    Patent number: 8592108
    Abstract: In the field of semiconductor device production, a method and system for fracturing or mask data preparation or optical proximity correction are disclosed, in which a target maximum dosage for a surface is input, and where a plurality of variable shaped beam (VSB) shots is determined that will form a pattern on the surface, where at least two of the shots partially overlap, and where the plurality of shots are determined so that the maximum dosage produced on the surface is less than the target dosage. A similar method is disclosed for manufacturing an integrated circuit.
    Type: Grant
    Filed: December 10, 2012
    Date of Patent: November 26, 2013
    Assignee: D2S, Inc.
    Inventors: Akira Fujimura, Harold Robert Zable
  • METHOD AND SYSTEM FOR FORMING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES WITH DIFFERENT DOSAGES
    Publication number: 20130309608
    Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes.
    Type: Application
    Filed: July 19, 2013
    Publication date: November 21, 2013
    Applicant: D2S, Inc.
    Inventors: Harold Robert Zable, Akira Fujimura
  • METHOD AND SYSTEM FOR FORMING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES WHICH EXPOSE DIFFERENT SURFACE AREA
    Publication number: 20130309609
    Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different than the union of shots from a different exposure pass. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, in which the union of shots from one of a plurality of charged particle beam exposure passes is different than the union of shots from a different exposure pass.
    Type: Application
    Filed: July 22, 2013
    Publication date: November 21, 2013
    Applicant: D2S, INC.
    Inventors: Harold Robert Zable, Akira Fujimura
  • METHOD AND SYSTEM FOR FORMING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES
    Publication number: 20130309610
    Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a plurality of exposure passes are used, and where the sum of the base dosage levels for all of the exposure passes does not equal a normal dosage. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, and where the sum of the base dosage levels for all of the exposure passes is different than a normal dosage.
    Type: Application
    Filed: July 22, 2013
    Publication date: November 21, 2013
    Applicant: D2S, INC.
    Inventors: Harold Robert Zable, Akira Fujimura
  • Method and System for Forming Non-Manhattan Patterns Using Variable Shaped Beam Lithography
    Publication number: 20130306884
    Abstract: A method and system for fracturing or mask data preparation or proximity effect correction is disclosed in which a series of charged particle beam shots is determined, where the series of shots is capable of forming a continuous non-manhattan track on a surface, such that the non-manhattan track has a line width roughness (LWR) which nearly equals a target LWR. A method and system for fracturing or mask data preparation or proximity effect correction is also disclosed in which at least two series of shots are determined, where each series of shots is capable of forming a continuous non-manhattan track on a surface, and where the space between tracks has space width roughness (SWR) which nearly equals a target SWR.
    Type: Application
    Filed: July 23, 2013
    Publication date: November 21, 2013
    Applicant: D2S, INC.
    Inventors: Akira Fujimura, Ingo Bork, Etienne Jacques
  • METHOD FOR OPTICAL PROXIMITY CORRECTION OF A RETICLE TO BE MANUFACTURED USING SHAPED BEAM LITHOGRAPHY
    Publication number: 20130290913
    Abstract: In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. A method for forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed.
    Type: Application
    Filed: June 21, 2013
    Publication date: October 31, 2013
    Inventor: Akira Fujimura
  • METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES
    Publication number: 20130284947
    Abstract: A method and system for optical proximity correction or fracturing or mask data preparation or mask process correction or proximity effect correction for charged particle beam lithography are disclosed in which a set of shaped beam shots is determined which, when used in a shaped beam charged particle beam writer, will form a pattern on the surface, where the set of shots includes shots for a plurality of exposure passes, and where the determination of the shots includes increasing the dose margin of the pattern by adding a shot in a single exposure pass.
    Type: Application
    Filed: June 21, 2013
    Publication date: October 31, 2013
    Inventor: Akira Fujimura
  • METHOD AND SYSTEM FOR CRITICAL DIMENSION UNIFORMITY USING CHARGED PARTICLE BEAM LITHOGRAPHY
    Publication number: 20130283216
    Abstract: A method for mask data preparation or mask process correction is disclosed in which a set of charged particle beam shots is determined which is capable of forming a pattern on a surface, wherein critical dimension uniformity (CDU) of the pattern is optimized. In some embodiments the CDU is optimized by varying at least two factors. In other embodiments, model-based techniques are used. In yet other embodiments, the surface is a reticle to be used in an optical lithographic process to form a pattern on a wafer, and CDU on the wafer is optimized.
    Type: Application
    Filed: April 15, 2013
    Publication date: October 24, 2013
    Applicant: D2S, Inc.
    Inventors: Ryan Pearman, Robert C. Pack, Akira Fujimura
  • METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY
    Publication number: 20130283217
    Abstract: A method for mask data preparation (MDP) is disclosed, in which a set of shots is determined that will form a pattern on a reticle, where the determination includes calculating the pattern that will be formed on a substrate using an optical lithographic process with a reticle formed using the set of shots. A method for optical proximity correction (OPC) or MDP is also disclosed, in which a preliminary set of charged particle beam shots is generated using a preliminary mask model, and then the shots are modified by calculating both a reticle pattern using a final mask model, and a resulting substrate pattern. A method for OPC is also disclosed, in which an ideal pattern for a photomask is calculated from a desired substrate pattern, where the model used in the calculation includes only optical lithography effects and/or substrate processing effects.
    Type: Application
    Filed: April 15, 2013
    Publication date: October 24, 2013
    Applicant: D2S, Inc.
    Inventors: Akira Fujimura, Anatoly Aadamov, Eldar Khaliullin, Ingo Bork
  • METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY
    Publication number: 20130283218
    Abstract: A method for mask data preparation (MDP) is disclosed, in which a set of shots is determined that will form a pattern on a reticle, where the determination includes calculating the pattern that will be formed on a substrate using an optical lithographic process with a reticle formed using the set of shots. A method for optical proximity correction (OPC) or MDP is also disclosed, in which a preliminary set of charged particle beam shots is generated using a preliminary mask model, and then the shots are modified by calculating both a reticle pattern using a final mask model, and a resulting substrate pattern. A method for OPC is also disclosed, in which an ideal pattern for a photomask is calculated from a desired substrate pattern, where the model used in the calculation includes only optical lithography effects and/or substrate processing effects.
    Type: Application
    Filed: April 15, 2013
    Publication date: October 24, 2013
    Applicant: D2S, Inc.
    Inventors: Akira Fujimura, Anatoly Aadamov, Eldar Khaliullin, Ingo Bork
  • METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY
    Publication number: 20130283219
    Abstract: A method for mask data preparation (MDP) is disclosed, in which a set of shots is determined that will form a pattern on a reticle, where the determination includes calculating the pattern that will be formed on a substrate using an optical lithographic process with a reticle formed using the set of shots. A method for optical proximity correction (OPC) or MDP is also disclosed, in which a preliminary set of charged particle beam shots is generated using a preliminary mask model, and then the shots are modified by calculating both a reticle pattern using a final mask model, and a resulting substrate pattern. A method for OPC is also disclosed, in which an ideal pattern for a photomask is calculated from a desired substrate pattern, where the model used in the calculation includes only optical lithography effects and/or substrate processing effects.
    Type: Application
    Filed: April 15, 2013
    Publication date: October 24, 2013
    Applicant: D2S, Inc.
    Inventors: Akira Fujimura, Anatoly Aadamov, Eldar Khaliullin, Ingo Bork
  • METHOD AND SYSTEM FOR DESIGN OF ENHANCED ACCURACY PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY
    Publication number: 20130252143
    Abstract: A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
    Type: Application
    Filed: May 14, 2013
    Publication date: September 26, 2013
    Applicant: D2S, Inc.
    Inventors: Akira Fujimura, Kazuyuki Hagiwara, Stephen F. Meier, Ingo Bork
  • Method and system for design of a reticle to be manufactured using variable shaped beam lithography
    Patent number: 8512919
    Abstract: A surface manufactured using variable shaped beam (VSB) shots is disclosed, where either: 1) the left edge of a first VSB shot intersects the top edge of a second VSB shot, and the bottom edge of the first VSB shot intersects the right edge of the second VSB shot; or 2) the left edge of the first VSB shot intersects the bottom edge of a second VSB shot, and the top edge of the first VSB shot intersects the right edge of the second VSB shot; and where neither shot crosses a field boundary of the VSB charged particle beam writer.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: August 20, 2013
    Assignee: D2S, Inc.
    Inventors: Akira Fujimura, Lance Glasser
  • METHOD AND SYSTEM FOR FORMING HIGH PRECISION PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY
    Publication number: 20130205264
    Abstract: A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction is disclosed in which a set of charged particle beam shots is determined that is capable of forming a pattern on a surface, wherein critical dimension (CD) split is reduced through the use of overlapping shots.
    Type: Application
    Filed: February 5, 2012
    Publication date: August 8, 2013
    Applicant: D2S, INC.
    Inventors: Akira Fujimura, Robert C. Pack
  • Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
    Patent number: 8501374
    Abstract: In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which a plurality of shaped beam shots is determined which will form a target pattern on a surface, within a predetermined tolerance, where the plurality of shaped beam shots includes a plurality of circular or nearly-circular character projection (CP) shots plus one or more non-circular shot, and where at least two shots in the plurality of circular or nearly-circular shots overlap. Methods for manufacturing a surface and for manufacturing a semiconductor device on a substrate are also disclosed.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: August 6, 2013
    Assignee: D2S, Inc.
    Inventors: Akira Fujimura, Michael Tucker
  • Method and system for fracturing a pattern using lithography with multiple exposure passes
    Patent number: 8492055
    Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed. Base dosages for a plurality of exposure passes are set and a multiplicity of shots for the plurality of exposure passes is exposed. The multiplicity of shots comprises two groups: a first group of shots for at least two exposures passes, wherein the union of shots for each exposure pass covers the same area, and where shots within an exposure pass are disjoint; and a second group of shots, where each shot in the second group of shots overlaps a shot in the first group of shots. Each shot in the second group is in one of the plurality of exposure passes. A method for forming a set of patterns on a surface is also disclosed.
    Type: Grant
    Filed: July 13, 2012
    Date of Patent: July 23, 2013
    Assignee: D2S, Inc.
    Inventors: Harold Robert Zable, Akira Fujimura