Abstract: A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700° C. and is lower than or equal to 1060° C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer.

Abstract: There is provided an automatic choke apparatus for an engine. A bimetal that is coupled to a choke valve of an intake system is provided in the vicinity of an outer wall face of a muffler. The muffler is divided into a first expansion chamber and a second expansion chamber across a partition plate. An exhaust hole that allows the expansion chambers to be communicated with each other is formed at the lower part of the partition plate. An exhaust gas is guided from the upstream first expansion chamber toward the downstream second expansion chamber through the exhaust hole. A bypass hole is formed at an upper part of the partition plate in such a manner that that the expansion chambers are communicated with each other as bypassing the exhaust hole. The bypass hole is open to the vicinity of the outer wall face opposite to the bimetal.

Abstract: An engine is provided with an output shaft and a motor generator connection shaft of a crankshaft at ends of a crank case and adapted such that the output shaft can be connected with an external driven apparatus. A motor generator has stators relatively fixed to the crank case and a rotor coupled with the motor generator connection shaft and rotating relative to the stators. An external apparatus connection shaft is connected with the rotor and disposed at an end of the motor generator on the opposite side of the engine. A clutch is disposed between the motor generator connection shaft and the rotor. A power storage unit stores electric power generated by the motor generator and supplies the electric power to the motor generator. A controller switches between an electric power generation function and a motor function, and engages and disengages the clutch.

Abstract: There is the operation device for an engine. An operation device for an engine performs a throttle operation of the engine which is disposed apart from an operation unit operated by an operator. The operation device includes: a link member rotatable with respect to a base in response to an operation of the operation unit; a cam member fixed to the base, and disposed at a distance from the center of rotation of the link member, the distance changing continuously according to the angular position of the cam member around the center of rotation; a cam follower connected to the link member and configured to along the cam member; and a throttle drive member for connecting the cam follower to a throttle operation unit of the engine.

Abstract: An engine is provided with an output shaft and a motor generator connection shaft of a crankshaft at ends of a crank case and adapted such that the output shaft can be connected with an external driven apparatus. A motor generator has stators relatively fixed to the crank case and a rotor coupled with the motor generator connection shaft and rotating relative to the stators. An external apparatus connection shaft is connected with the rotor and disposed at an end of the motor generator on the opposite side of the engine. A clutch is disposed between the motor generator connection shaft and the rotor. A power storage unit stores electric power generated by the motor generator and supplies the electric power to the motor generator. A controller switches between an electric power generation function and a motor function, and engages and disengages the clutch.

Abstract: A semiconductor optical waveguide device includes a substrate having a first area and a second area, and first, second, and semiconductor mesas on the substrate. The first semiconductor mesa includes a cladding layer and a first mesa portion on the second area, the first mesa portion including first and second portions. The second semiconductor mesa includes an intermediate layer, a first core layer, and first and second mesa portions on the first and second area, respectively. The third semiconductor mesa includes a second core layer, and first and second mesa portions having a greater width than that of the second semiconductor mesa. The first portion of the first semiconductor mesa has a substantially the same width as the second mesa portion of the second semiconductor mesa. The first core layer is optically coupled to the second core layer through the intermediate layer disposed between the first and second core layers.

Abstract: A method for bonding a thin film piece includes: forming a support layer on each upper face of a plurality of thin film pieces; fixing the plurality of thin film pieces to a first substrate through a temporary fixing layer provided on a lower face of the first substrate so that the temporary fixing layer contacts with the upper face and at least a part of a side face of each support layer; bonding a lower face of the plurality of thin film pieces to a second substrate; and removing the first substrate from the plurality of thin film pieces by removing at least one of the support layer and the temporary fixing layer.

Abstract: An axial gap-type power generator has: a rotor fixed to a crankshaft of an engine; a stator fixed to a crankcase of the engine and opposing the rotor across a spacing in an axial direction; and a housing to house the rotor and the stator and to fix the stator. The stator is configured by arraying, in a peripheral direction, a plurality of coils C each configured through winding of a winding about a stator core. The housing is formed of a resin-based material. Winding ends of the coils are wired using connector fittings each of which is formed of a metal plate, is held on the housing, and has a clamp into which the winding end is inserted and clamped.

Abstract: An enhanced utilization efficiency of gases can be presented and an improved deposition characteristics are presented, when a film is deposited with a plurality of gases. A deposition apparatus 100 includes: a reaction chamber 102 for depositing a film; a first gas supply line 112 and a second gas supply line 152 for supplying a first source material A and a gas B to a reaction chamber 102, respectively; and an exciting unit 106 that is capable of exciting a gas supplied in the reaction chamber 102 to form a plasma. In the deposition apparatus 100 having such configuration, a deposition operation is performed by: a first operation for supplying a gas derived from a first source material A and a gas B in the reaction chamber 102 to cause the gas derived from a first source material A adsorbed on the substrate, thereby forming a deposition layer; and a second operation for supplying a second gas in reaction chamber 102, and treating the deposition layer with the gas in a condition of being plasma-excited.

Abstract: An engine includes: a cylinder; a first bearing that is at least partially integrally formed with the cylinder and configured to rotatably support a first shaft of a crankshaft; a second bearing that is at least partially integrally formed with the cylinder and configured to rotatably support a second shaft of the crankshaft; and a first crankcase member and a second crankcase member that include a resin-based material, and respectively constitute part and remaining part of a crankcase that houses the crankshaft. A connecting portion between the first crankcase member and the second crankcase member is continuously connected along substantially an entire length by at least one of fitting, bonding, and welding.

Abstract: A semiconductor manufacturing method includes: forming a seed film including a first metal over a bottom surface and a side wall of an opening portion formed over interlayer insulating films and a field portion located over the interlayer insulating film except the opening portion, forming a resist over the seed film and filling the opening portion with the resist, removing part of the resist, exposing the seed film formed over the upper portion of the side walls of the opening portion and the field portion, forming a cover film including a second metal, whose resistivity is higher than that of the first metal, over the seed film located over the upper portion of the side wall of the opening portion and the field portion, exposing the seed film by removing the resist, and forming a plating film including the first metal over the exposed seed film.

Abstract: A generation of a void in a recessed section is inhibited. A method for manufacturing a semiconductor device includes: an operation of forming recessed sections in an insulating film, which is formed on a semiconductor substrate; an operation of forming a seed film in the recessed section; an operation of forming a cover metal film in the recessed section; an operation of selectively removing the cover metal film to expose the seed film over the bottom section of the recessed section; and an operation to carrying out a growth of a plated film to fill the recessed section by utilizing the seed film exposed in the bottom section of the recessed section as a seed.

Abstract: An objective of this invention is to reliably form a plating film. The following two steps are sequentially conducted: a first step of connecting a film-formation surface of a wafer 109 to a cathode electrode 107, making the film-formation surface inclined from the surface of a plating solution 103 and immersing the wafer 109 into the plating solution 103 with applying a first current between the cathode electrode 107 and an Cu anode electrode 105 disposed in the plating solution 103, and second step of, after immersing the film-formation surface in the plating solution 103, applying a second current between the cathode electrode 107 and the Cu anode electrode 105 to form a metal film on the film-formation surface by electrolytic plating. In the first step, the first current is controlled on the basis of an inclination angle between the liquid surface and the film-formation surface.

Abstract: To provide a thin film capacitor having a device structure for suppressing peeling between an insulating film and a substrate. A thin film capacitor 100 has a laminate structure that is formed by laminating a lower electrode 20, a dielectric film 30, and an upper electrode 40 in sequence on a substrate 10. An adhesion layer 41 is formed on a side surface of the lower electrode 20 via the dielectric film 30, and an insulating film 50 in contact with the adhesion layer 41 covers the laminate structure. According to this device structure, the adhesion layer 41 having excellent adhesiveness to the insulating film 50 is disposed between the insulating film 50 and the dielectric film 30, so that peeling of the insulating film 50 can be suppressed.

Abstract: There is the operation device for an engine. An operation device for an engine performs a throttle operation of the engine which is disposed apart from an operation unit operated by an operator. The operation device includes: a link member rotatable with respect to a base in response to an operation of the operation unit; a cam member fixed to the base, and disposed at a distance from the center of rotation of the link member, the distance changing continuously according to the angular position of the cam member around the center of rotation; a cam follower connected to the link member and configured to along the cam member; and a throttle drive member for connecting the cam follower to a throttle operation unit of the engine.

Abstract: A generation of a void in a recessed section is inhibited. A method for manufacturing a semiconductor device includes: an operation of forming recessed sections in an insulating film, which is formed on a semiconductor substrate; an operation of forming a seed film in the recessed section; an operation of forming a cover metal film in the recessed section; an operation of selectively removing the cover metal film to expose the seed film over the bottom section of the recessed section; and an operation to carrying out a growth of a plated film to fill the recessed section by utilizing the seed film exposed in the bottom section of the recessed section as a seed.

Abstract: A method for fabricating a semiconductor device includes forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source, and forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer. The forming of the AlN layer grows the AlN layer so as to satisfy the following: 76500/x0.81<y<53800/x0.83 where x is a thickness of the AlN layer and y is an FWHM of a rocking curve of a (002) plane of the AlN layer.

Abstract: There is provided an automatic choke apparatus for an engine. A bimetal that is coupled to a choke valve of an intake system is provided in the vicinity of an outer wall face of a muffler. The muffler is divided into a first expansion chamber and a second expansion chamber across a partition plate. An exhaust hole that allows the expansion chambers to be communicated with each other is formed at the lower part of the partition plate. An exhaust gas is guided from the upstream first expansion chamber toward the downstream second expansion chamber through the exhaust hole. A bypass hole is formed at an upper part of the partition plate in such a manner that that the expansion chambers are communicated with each other as bypassing the exhaust hole. The bypass hole is open to the vicinity of the outer wall face opposite to the bimetal.

Abstract: A semiconductor manufacturing method includes: forming a seed film including a first metal over a bottom surface and a side wall of an opening portion formed over interlayer insulating films and a field portion located over the interlayer insulating film except the opening portion, forming a resist over the seed film and filling the opening portion with the resist, removing part of the resist, exposing the seed film formed over the upper portion of the side walls of the opening portion and the field portion, forming a cover film including a second metal, whose resistivity is higher than that of the first metal, over the seed film located over the upper portion of the side wall of the opening portion and the field portion, exposing the seed film by removing the resist, and forming a plating film including the first metal over the exposed seed film.

Abstract: A thin-film device incorporates a device main body and four terminal electrodes. The device main body has four side surfaces. The terminal electrodes are disposed to touch respective portions of the side surfaces. The device main body includes a lower conductor layer that is not used to form a passive element, and an upper conductor layer used to form the passive element. The upper and lower conductor layers include respective lead electrode portions that have respective end faces located at the side surfaces of the device main body. At the side surfaces of the device main body, the end face of the lead electrode portion of the lower conductor layer and the end face of the lead electrode portion of the upper conductor layer are electrically and physically connected to each other. The terminal electrodes touch these end faces and are thereby connected to the upper and lower conductor layers.