Abstract: A heating apparatus comprises heating elements arranged of a sheet form and having notches or through holes provided therein, a side wall member made of an electrically conductive material and arranged to surround and define the heating space, and holding members disposed at the heating space side of the side wall member for holding at one end the heating elements. Also, extending members are provided, each member comprising an extending-through portion arranged to project from the heating space side of the side wall member and extend through the notch or through hole between both ends in the heating element and projected portions arranged to project at both, front and back, sides of the heating element from the extending-through portion in a direction, which is orthogonal to the extending direction of the extending-through portion, thus to inhibit the displacement of the heating elements along the extending direction.

Abstract: A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.

Abstract: A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.

Abstract: A semiconductor manufacturing apparatus and substrate processing method is provided with which the film formed on a substrate can be controlled in thickness and quality.

Abstract: An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.

Abstract: Described is an adhesive containing a polycarbodiimide resin having repeating units represented by the following formula:.paren open-st.R--N.dbd.C.dbd.N.paren close-st..sub.nwherein R is a divalent hydrocarbon group and n is an integer of 5 to 250, and also described is a flexible printed circuit board and a coverlay film fabricated using the above-described polycarbodiimide resin-containing adhesive.

Abstract: Described is an adhesive containing a polycarbodiimide resin having repeating units represented by the following formula:.paren open-st.R--N.dbd.C.dbd.N.paren close-st..sub.nwherein R is a divalent hydrocarbon group and n is an integer of 5 to 250, and also described is a flexible printed circuit board and a coverlay film fabricated using the above-described polycarbodiimide resin-containing adhesive.

Abstract: The method for preparing a crosslinked polycarbodiimide according to the present invention comprises reacting a polydicarbodiimide compound with a compound, which has in a molecule thereof two or more hydroxy or mercapto groups, in the presence of an alcoholate of an alkali metal or of an alkaline earth metal. The crosslinked polycarbodiimide obtained according to the method is excellent in heat resistance and mechanical properties.

Abstract: A hydroxy- or mercapto-bearing organic compound is caused to react with a polycarbodiimide compound in the presence of an alcoholate of an alkali metal or of an alkaline earth metal. The carbodiimide linkage in the polymer which results from the above-described reaction is crosslinked.

Abstract: A polysilane composition including a polysilane and a plasticizer can be coated as a thin film having improved mechanical strength and a high photo decomposition rate. A polysilane composition including a polysilane and an ester can be coated as a thin film which is exposed to UV and readily dyed to form a dyed polysilane film.

Abstract: A polycarbodiimide compound is reacted with an organic compound having at least two amino groups in the molecule. A polycarbodiimide compound is reacted with an amine compound having a silicon atom in the molecule. The carbodiimide bonds remained in the crosslinked material are further crosslinked. The crosslinked material is further heated/calcined to obtain an inorganic material having high heat resistance and strong toughness.

Abstract: This invention provides a process wherein a stable solution of polycarbodiimide with a number-average molecular-weight of 5,000 to 60,000 can be very easily prepared by using an organic diisocyanate (e.g., 2,4-tolylene diisocyanate or 2,6-tolylene diisocyanate) as starting material, a cyclic phosphine oxide as catalyst and a chlorinated aromatic compound as solvent and by controlling certain reaction conditions within the reaction temperature range of 110.degree. to 150.degree. C.

Abstract: This invention provides a process for the preparation of a polycarbodiimide solution wherein the polycarbodiimide is synthesized by heating an organic diisocyanate (e.g., 2,4-tolylene diisocyanate or 2,6-tolylene diisocyanate) in the presence of a carbodiimidation catlayst characterized in that a non-chlorinated aromatic hydrocarbon is used as the solvent and the resulting polycarbodiimide has a number average molecular weight from about 3,000 to about 10,000; wherein the synthesis is performed in the temperature range of from about 100.degree. to about 120.degree. C.

Abstract: In a process for preparing a polysilane from a diorganodihalosilane and an alkali metal, a low molecular weight polysilane results from the process as a by-product. The low molecular weight polysilane is further reacted with an alkali metal for conversion into a high molecular weight polysilane.

Abstract: A polysilane is blended with a porphyrin or a metal complex thereof. The polysilane composition may further contain a plasticizer. The porphyrin is effective for suppressing photolysis of polysilane.

Abstract: A hafnium-containing silazane polymer is obtained through a polymerization reaction of which the reactants are(A) a halide of an organic silicon compound;(B) a hafnium compound having a the formula:HfX.sub.4 [I]wherein X is chlorine or bromine, and(C) a disilazane having the formula: ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 may be the same or different and are hydrogen, methyl ethyl, phenyl or vinyl.

Abstract: Polysilanes are synthesized by reacting dihalosilanes in the presence of alkali metal particles while using copper powder, cuprous oxide, cupric oxide, or an organic copper compound as a catalyst. There are obtained high molecular weight polysilanes in high yields.

Abstract: An organic silazane polymer is prepared by reacting ammonia gas with a mixture of a trihalosilane and a monohalosilane, for example, methyltrichlorosilane and trimethylchlorosilane in an organic solvent to form a silazane compound, and heating the silazane compound at 200 to 350.degree. C. for polymerization. By melting, shaping, infusibilizing, and firing the silazane polymer, there is obtained a ceramic material.

Abstract: Organic silazane polymers are prepared by reacting a specific organic silicon compound or a mixture of organic silicon compounds with a disilazane at a temperature of 25.degree. to 350.degree. C. in an anhydrous atmosphere. The polymers are then reacted with ammonia, thereby reducing the residual halogen in the polymers. The resulting organic silazane polymers are resistant against hydrolysis and stable and thus suitable as precursors for manufacturing ceramic fibers and sheets by shaping, infusibilizing and firing.

Abstract: A hafnium-containing silazane polymer is obtained through a polymerization reaction of which the reactants are(A) a halide of an organic silicon compound;(B) a hafnium compound having a the formula:HfX.sub.4 [I]wherein X is chlorine or bromine, and(C) a disilazane having the formula: ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 may be the same or different and are hydrogen, methyl ethyl, phenyl or vinyl.