Abstract: A fabrication method of a semiconductor device comprises the steps of forming a metal thin film Whose oxide is insulative on sidewall of a hole formed in a semiconductor substrate and forming an insulating metal oxide film by oxidizing the metal thin film.

Abstract: This invention relates to a method for producing virus RNA polymerases of RNA viruses, more specifically, virus RNA polymerases of RNA viruses free of virus genomic RNA. The methods described in this invention includes the procedures for preparation of cDNAs for the genes for the component proteins of RNA polymerase of an RNA virus, incorporation of the cDNA into baculovirus genome to construct recombinant virus, and the infection of insect cells with the recombinant virus to express RNA polymerase. In this method, it is recommended that all species of the recombinant viruses, each of which is designed for expressing each of the above-mentioned component protein genes of RNA polymerase, are coinfected into insect cells. Thus, cDNA is prepared for each of the component proteins of RNA polymerase and incorporated into baculovirus genome to construct recombinant virus for independently expressing the corresponding protein. In addition, the RNA viruses described above include influenza virus especially.

Abstract: This invention relates to a method for producing virus RNA polymerases of RNA viruses, more specifically, virus RNA polymerases of RNA viruses free of virus genomic RNA.

Abstract: Stripping and cleaning agent for removing dry-etching photoresist residues, and a method for forming an aluminum based line pattern using the stripping and cleaning agent. The stripping and cleaning agent contains (a) from 5 to 50% by weight of an organocarboxlic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is integer of from 1 to 4, q is integer of from 1 to 3, and p+q=4 and (b) from 0.5 to 15% by weight of a fluorine compound. The inventive method is advantageously applied to treating a dry-etched semiconductor substrate with the stripping and cleaning agent. The semiconductor substrate comprises a semiconductor wafer having thereon a conductive layer containing aluminum.